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TSM3443CX6 RF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM3443CX6 RF-VB** is a **single P-Channel MOSFET**, packaged in **SOT23-6**, designed for **low-voltage** applications, with a **-30V withstand voltage (VDS)**. It has a **-4.8A maximum drain current (ID)**, suitable for switching applications requiring low on-resistance and high current carrying capacity. **TSM3443CX6 RF-VB** adopts **Trench technology**, which can provide stable conduction performance at a lower gate-source voltage, and its **gate threshold voltage (Vth)** is **-1.7V**, which is suitable for low-voltage drive circuits. **RDS(ON)** is **49mΩ @ VGS=10V**, providing lower conduction losses, making it perform well in high-efficiency conversion and switching applications.
This MOSFET is designed for medium current **load switch applications**. It can withstand **high current** and work stably under low voltage conditions. It is suitable for **power management, switching power supplies, load switches and drive circuits**.
**TSM3443CX6 RF-VB** is a **single P-Channel MOSFET**, packaged in **SOT23-6**, designed for **low-voltage** applications, with a **-30V withstand voltage (VDS)**. It has a **-4.8A maximum drain current (ID)**, suitable for switching applications requiring low on-resistance and high current carrying capacity. **TSM3443CX6 RF-VB** adopts **Trench technology**, which can provide stable conduction performance at a lower gate-source voltage, and its **gate threshold voltage (Vth)** is **-1.7V**, which is suitable for low-voltage drive circuits. **RDS(ON)** is **49mΩ @ VGS=10V**, providing lower conduction losses, making it perform well in high-efficiency conversion and switching applications.
This MOSFET is designed for medium current **load switch applications**. It can withstand **high current** and work stably under low voltage conditions. It is suitable for **power management, switching power supplies, load switches and drive circuits**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
2. Detailed parameter description:
- **Model**: TSM3443CX6 RF-VB
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Withstand voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Maximum power dissipation (Pd)**: Approximately **0.7W
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: -10A
- **Input capacitance (Ciss)**: Approximately **120pF**
- **Output capacitance (Coss)**: Approximately **35pF**
- **Reverse recovery time (Trr)**: Approximately **200ns**
- **Typical switching characteristics**: Medium speed switching
- **Model**: TSM3443CX6 RF-VB
- **Package type**: SOT23-6
- **Configuration**: Single-P-Channel
- **Withstand voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum drain current (ID)**: -4.8A
- **Maximum power dissipation (Pd)**: Approximately **0.7W
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: -10A
- **Input capacitance (Ciss)**: Approximately **120pF**
- **Output capacitance (Coss)**: Approximately **35pF**
- **Reverse recovery time (Trr)**: Approximately **200ns**
- **Typical switching characteristics**: Medium speed switching
Domain and module applications：
3. Application fields and module examples:
**TSM3443CX6 RF-VB** is mainly used in low-voltage and medium-current switching power supplies, load switches, load regulation and other occasions due to its low on-resistance and moderate current capability. The following are its typical application examples:
# **Power management**
In the power management system, **TSM3443CX6 RF-VB** can be used for load switches in **DC-DC converters**, **current control** in switching power supplies, etc. This MOSFET can effectively regulate the output current of the power supply to ensure the stability of voltage and current. Its low on-resistance (RDS(ON)) characteristics help reduce losses and improve efficiency, and are suitable for use in high-efficiency power modules.
# **Automotive electronics**
In **automotive electronic systems**, **TSM3443CX6 RF-VB** can be used in various low-voltage control circuits in the car, including battery chargers, electronic control units (ECUs), and power windows, seat adjustment and other systems. Due to its low on-resistance and high reliability, it is very suitable for automotive electronic applications that require precise control of current and voltage.
**Summary**:
**TSM3443CX6 RF-VB** is a high-efficiency P-Channel MOSFET that is widely used in fields such as **load switching, power management, LED driving, audio amplifiers, and automotive electronics**. Its low on-resistance, moderate drain current, and high reliability make it an ideal choice for various low-voltage power and load control systems. Whether in **DC-DC converters**, **LED driving**, or **audio motor control** systems, the TSM3443CX6 RF-VB can provide excellent performance.
**TSM3443CX6 RF-VB** is mainly used in low-voltage and medium-current switching power supplies, load switches, load regulation and other occasions due to its low on-resistance and moderate current capability. The following are its typical application examples:
# **Power management**
In the power management system, **TSM3443CX6 RF-VB** can be used for load switches in **DC-DC converters**, **current control** in switching power supplies, etc. This MOSFET can effectively regulate the output current of the power supply to ensure the stability of voltage and current. Its low on-resistance (RDS(ON)) characteristics help reduce losses and improve efficiency, and are suitable for use in high-efficiency power modules.
# **Automotive electronics**
In **automotive electronic systems**, **TSM3443CX6 RF-VB** can be used in various low-voltage control circuits in the car, including battery chargers, electronic control units (ECUs), and power windows, seat adjustment and other systems. Due to its low on-resistance and high reliability, it is very suitable for automotive electronic applications that require precise control of current and voltage.
**Summary**:
**TSM3443CX6 RF-VB** is a high-efficiency P-Channel MOSFET that is widely used in fields such as **load switching, power management, LED driving, audio amplifiers, and automotive electronics**. Its low on-resistance, moderate drain current, and high reliability make it an ideal choice for various low-voltage power and load control systems. Whether in **DC-DC converters**, **LED driving**, or **audio motor control** systems, the TSM3443CX6 RF-VB can provide excellent performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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