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TSM2NB60CH5G-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM2NB60CH5G-VB** is a **single N-Channel MOSFET** in **TO251 package**, with **650V withstand voltage (VDS)**, suitable for high-voltage switching and power control applications. This MOSFET uses **Plannar technology** and is designed to provide efficient current control and stable switching performance. **VGS** has an operating range of **±30V**, which can withstand higher gate-source voltages and adapt to various drive circuits. **TSM2NB60CH5G-VB** has a **gate threshold voltage (Vth)** of **3.5V**, which means it requires a higher gate voltage to turn on, suitable for some applications with high requirements for switching accuracy. **RDS(ON)** is **4300mΩ** at **VGS=10V**, which has a higher on-resistance than low-voltage MOSFETs, but can handle currents in high-voltage applications.
This MOSFET is suitable for high voltage and low current applications, such as switching power supplies, home appliances, and general high voltage load switches. Although its current carrying capacity is **2A**, due to its high voltage resistance characteristics, it is suitable for use in environments that require high voltage protection.
**TSM2NB60CH5G-VB** is a **single N-Channel MOSFET** in **TO251 package**, with **650V withstand voltage (VDS)**, suitable for high-voltage switching and power control applications. This MOSFET uses **Plannar technology** and is designed to provide efficient current control and stable switching performance. **VGS** has an operating range of **±30V**, which can withstand higher gate-source voltages and adapt to various drive circuits. **TSM2NB60CH5G-VB** has a **gate threshold voltage (Vth)** of **3.5V**, which means it requires a higher gate voltage to turn on, suitable for some applications with high requirements for switching accuracy. **RDS(ON)** is **4300mΩ** at **VGS=10V**, which has a higher on-resistance than low-voltage MOSFETs, but can handle currents in high-voltage applications.
This MOSFET is suitable for high voltage and low current applications, such as switching power supplies, home appliances, and general high voltage load switches. Although its current carrying capacity is **2A**, due to its high voltage resistance characteristics, it is suitable for use in environments that require high voltage protection.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description:
- **Model**: TSM2NB60CH5G-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Maximum power dissipation (Pd)**: Approximately **30W** (depending on the working environment and heat dissipation design)
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Plannar technology
- **Maximum pulse current (IDM)**: 8A
- **Reverse recovery time (Trr)**: about **300ns**
- **Input capacitance (Ciss)**: about **350pF**
- **Output capacitance (Coss)**: about **25pF**
- **Typical switching characteristics**: medium switching speed, suitable for high power applications
- **Model**: TSM2NB60CH5G-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 4300mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Maximum power dissipation (Pd)**: Approximately **30W** (depending on the working environment and heat dissipation design)
- **Operating temperature range**: -55°C to +150°C
- **Technology type**: Plannar technology
- **Maximum pulse current (IDM)**: 8A
- **Reverse recovery time (Trr)**: about **300ns**
- **Input capacitance (Ciss)**: about **350pF**
- **Output capacitance (Coss)**: about **25pF**
- **Typical switching characteristics**: medium switching speed, suitable for high power applications
Domain and module applications：
3. Application fields and module examples:
**TSM2NB60CH5G-VB** As a high-voltage MOSFET, it is widely used in applications that require **high voltage** and **medium current carrying capacity**, and is particularly suitable for use in high-voltage switches, power management and protection circuits. The following are typical application examples:
# **Switching Power Supply (SMPS)**
This MOSFET is very suitable for **Switching Power Supply (SMPS)** modules, especially **high-voltage DC-DC converters**, **AC-DC adapters** and other devices. In these applications, TSM2NB60CH5G-VB provides good high-voltage tolerance (650V) and can effectively operate in high-voltage input and low-current output environments. Its **on-resistance** (4300mΩ) is sufficient for use in some high-voltage switching applications, and has high stability in applications with low power consumption requirements.
# **Industrial Equipment and Power Control**
In some **industrial equipment** and **power control systems**, the TSM2NB60CH5G-VB can effectively switch high-voltage loads. It can be used as a switching element in high-voltage control systems to help efficiently manage the transmission and distribution of power.
**Summary**:
**TSM2NB60CH5G-VB** is a MOSFET designed for high-voltage applications, suitable for a variety of fields requiring **650V voltage** and **medium current (2A)** carrying capacity. It is widely used in **switching power supplies, home appliance power management, LED drive, motor control, automotive electrical systems** and **industrial control**. It has stable switching performance and low conduction loss, and is an ideal choice for efficient power management.
**TSM2NB60CH5G-VB** As a high-voltage MOSFET, it is widely used in applications that require **high voltage** and **medium current carrying capacity**, and is particularly suitable for use in high-voltage switches, power management and protection circuits. The following are typical application examples:
# **Switching Power Supply (SMPS)**
This MOSFET is very suitable for **Switching Power Supply (SMPS)** modules, especially **high-voltage DC-DC converters**, **AC-DC adapters** and other devices. In these applications, TSM2NB60CH5G-VB provides good high-voltage tolerance (650V) and can effectively operate in high-voltage input and low-current output environments. Its **on-resistance** (4300mΩ) is sufficient for use in some high-voltage switching applications, and has high stability in applications with low power consumption requirements.
# **Industrial Equipment and Power Control**
In some **industrial equipment** and **power control systems**, the TSM2NB60CH5G-VB can effectively switch high-voltage loads. It can be used as a switching element in high-voltage control systems to help efficiently manage the transmission and distribution of power.
**Summary**:
**TSM2NB60CH5G-VB** is a MOSFET designed for high-voltage applications, suitable for a variety of fields requiring **650V voltage** and **medium current (2A)** carrying capacity. It is widely used in **switching power supplies, home appliance power management, LED drive, motor control, automotive electrical systems** and **industrial control**. It has stable switching performance and low conduction loss, and is an ideal choice for efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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