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TSM2N70CP RO-VB Product details

Product introduction:

1. **Product Introduction: TSM2N70CP RO-VB**

TSM2N70CP RO-VB is an N-channel MOSFET in TO251 package, designed for high voltage applications. The maximum drain-source voltage (V_DS) of this product is 700V, which is suitable for power management systems that require high voltage resistance. Its gate drive voltage (V_GS) is ±30V, the threshold voltage (V_th) is 3.5V, and the on-resistance (R_DS(ON)) is 2400mΩ (at V_GS=10V). Although its on-resistance is relatively high, the maximum leakage current (I_D) is 2A, which is suitable for lower current applications. TSM2N70CP RO-VB uses SJ_Multi-EPI technology, which provides higher current density and lower switching loss, and can meet the needs of a variety of high-voltage switching power supplies, load control and other fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO251 Single-N 700V 3.5V 2A 2400mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO251 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO251 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO251 Single-N 700V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO251 Single-N
2. **Detailed parameter description:**

- **Model**: TSM2N70CP RO-VB
- **Package type**: TO251
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 2400mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 2A
- **Technology type**: SJ_Multi-EPI
- **Maximum power loss**: Evaluated according to actual working conditions (ambient temperature, heat dissipation solution, etc.)
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: suitable for medium frequency switching applications, suitable for low power applications
- **Drain-source voltage maximum**: 700V, suitable for high voltage applications
- **Gate drive voltage range**: ±30V, suitable for a variety of control voltage requirements

Domain and module applications:

3. **Application fields and module examples:**

1. **High voltage power management**
TSM2N70CP RO-VB is an N-channel MOSFET suitable for high voltage power management, capable of withstanding drain-source voltages up to 700V. It is widely used in high voltage switch power supplies (SMPS), and can effectively manage the switching process of the power supply to ensure stable current transmission. It is particularly suitable for medium and low power AC/DC conversion circuits and voltage regulators.

2. **Inverter power supply**
In inverter applications, TSM2N70CP RO-VB can be used as a high voltage switching element and is widely used in small solar inverters, UPS systems (uninterruptible power supplies) and motor drive circuits. It can effectively control large currents and handle high voltage applications while providing low power losses and high current density.

3. **Power tools and home appliances**
TSM2N70CP RO-VB is suitable for power conversion modules in power tools and home appliances that require high withstand voltage and low power loss. This MOSFET can withstand high voltage, so it is very suitable for use in battery management systems, drive circuits for power tools, and switching power supplies for home appliances to ensure product reliability and long-term stability.

4. **Battery Management System (BMS)**
TSM2N70CP RO-VB has important applications in battery management systems, especially in the management of high-voltage battery packs. It can provide stable power conversion while effectively managing current during charging and discharging to ensure battery safety and long life. Suitable for battery management modules in electric vehicles, electric bicycles and portable power supplies.

5. **Lighting control system**
Due to its high voltage withstand capability, TSM2N70CP RO-VB is also suitable for driving circuits in high-power LED lighting systems, especially in high-power LED lighting systems, the MOSFET can effectively control high-voltage power supply and improve the overall efficiency of the system. It can ensure the stable operation of the light source, reduce energy loss and heat.

6. **Industrial automation equipment**
In industrial automation, TSM2N70CP RO-VB can be used to control high-voltage load switches, motor drives and other power management systems. Its high voltage withstand capability and reliability make it a key component in control systems and variable frequency drive systems, ensuring efficient and stable processing of power conversion tasks.

7. **Automotive electronic power management**
In automotive electronic systems, TSM2N70CP RO-VB is suitable for high-voltage power management modules, such as vehicle power supplies, vehicle audio, sensors and control circuits. It can operate stably under high voltage conditions to ensure the normal operation of automotive electronic equipment, especially in the battery management system of hybrid vehicles and electric vehicles, and has important application value.

8. **Communication base station power supply system**
Due to its high voltage resistance characteristics, TSM2N70CP RO-VB can be widely used in the power supply system of communication base stations, especially in the process of converting AC power into DC power. In such applications, MOSFET is required to have high voltage resistance and stable current transmission performance to ensure the efficient operation of the power system and maintain long-term stability.

In summary, TSM2N70CP RO-VB is an N-channel MOSFET suitable for high-voltage applications, with a drain-source voltage capability of 700V and low power loss. It is widely used in high-voltage power management, power tools, inverters, battery management, industrial automation, and automotive electronics. It provides high-efficiency and reliable current switching, suitable for a variety of high-voltage power supplies and load control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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