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TSM2N7002KDCU6 RF-VB Product details

Product introduction:

Product Introduction

**TSM2N7002KDCU6 RF-VB** is a bipolar N-type MOSFET using **Trench** technology, packaged as **SC70-6**. It has a drain-source voltage (V_DS) of 60V and a low on-resistance (R_DS(ON) = 1800mΩ @ V_GS = 10V), suitable for medium-power switching applications. The maximum drain current (I_D) of this MOSFET is 0.35A, suitable for low-power control circuits and small electronic devices. Its dual N-type channel design makes it particularly suitable for bidirectional switching or differential signaling applications. TSM2N7002KDCU6 RF-VB has a low gate-source voltage (V_th = 1.7V) and provides excellent switching performance, and is widely used in low-power, high-efficiency electronic products.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SC70-6 Dual-N+N 60V 1.7V 0.35A 1800mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SC70-6 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SC70-6 Dual-N+N 60V 1.7V 0.35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SC70-6 Dual-N+N 60V 1.7V 0.35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SC70-6 Dual-N+N
Detailed parameter description

- **Package**: SC70-6
- **Configuration**: Dual-N+N-Channel
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Turning voltage (V_th)**: 1.7V
- **Channel on-resistance (R_DS(ON))**:
- 1800mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 0.35A
- **Technology**: Trench technology

Domain and module applications:

Application fields and module examples

1. **Low-power switching power supply (SMPS)**
TSM2N7002KDCU6 RF-VB is suitable for power control and power regulation in low-power switching power supplies (SMPS). Its dual N-type channel design enables it to play a role in bidirectional switching or power management circuits. Especially in portable devices and small battery-powered systems, it can be used as a load switch or switching power supply control element to ensure high-efficiency power management under low-power operation.

2. **Sensor signal conditioning and switching**
This MOSFET is very suitable for use in sensor signal conditioning circuits. Due to its low V_th (1.7V), it can operate stably at a lower gate-source voltage, making it perform well in sensor signal processing, detection circuits, and small analog signal conditioning modules. Especially in low-power sensor networks or small smart devices, it can provide efficient and low-loss signal switching functions.

3. **Differential signal switching and regulation**
The dual N-type channel configuration of the TSM2N7002KDCU6 RF-VB makes it particularly suitable for differential signal switching and regulation applications. For example, in high-speed data transmission, communication modules, and differential interface circuits, this MOSFET can efficiently switch positive and negative signals and provide precise switching control.

4. **LED driving and small lighting systems**
In LED driving and small lighting systems, the TSM2N7002KDCU6 RF-VB can be used as a switching element to control the working state of the LED. Due to its low on-resistance and low gate-source voltage requirements, this MOSFET is very suitable for driving low-power LED lamps, especially in compact lighting systems or low-power LED applications, which can effectively reduce power loss and improve energy efficiency.

5. **Portable Devices and Battery Management**
TSM2N7002KDCU6 RF-VB is ideal for portable electronic devices, battery management systems (BMS), and power management applications in handheld devices due to its low current capability and compact SC70-6 package. In these applications, MOSFETs can efficiently control power switches, protect batteries and optimize energy usage, extending the use time of the device.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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