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TSM2N60CH-VB Product details
Back to previous pageProduct introduction：
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TSM2N60CH-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, which is suitable for power management and switching applications that require higher voltage resistance. The Vth of this MOSFET is 3.5V, which ensures that it is turned on at a lower gate voltage and has higher operating stability. Its RDS(ON) value is 4300mΩ@VGS=10V, which is relatively high, but still suitable for some applications with low power consumption and lower current requirements. The ID of TSM2N60CH-VB is 2A, which can withstand a small current load. It is suitable for power supply designs that require high voltage resistance but relatively low power, and is widely used in power electronics and high voltage switching circuits.
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TSM2N60CH-VB is a high-voltage N-channel MOSFET in TO251 package, designed for high voltage applications. Its maximum drain-source voltage (VDS) is 650V, which is suitable for power management and switching applications that require higher voltage resistance. The Vth of this MOSFET is 3.5V, which ensures that it is turned on at a lower gate voltage and has higher operating stability. Its RDS(ON) value is 4300mΩ@VGS=10V, which is relatively high, but still suitable for some applications with low power consumption and lower current requirements. The ID of TSM2N60CH-VB is 2A, which can withstand a small current load. It is suitable for power supply designs that require high voltage resistance but relatively low power, and is widely used in power electronics and high voltage switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 4300mΩ @ VGS=10V
- **ID**: 2A
- **Technology**: Plannar
**
- **Package**: TO251
- **Configuration**: Single N-channel
- **VDS**: 650V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 4300mΩ @ VGS=10V
- **ID**: 2A
- **Technology**: Plannar
**
Domain and module applications：
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1. **High Voltage Power Management**: TSM2N60CH-VB is often used in power management systems that require high voltage protection and voltage regulation. For example, in power adapters, voltage regulation modules, and AC-DC converters, it can effectively manage 650V voltage to ensure stable system operation.
2. **Home Appliances and Power Control**: In the power switching circuits of home appliances such as air conditioners, electric water heaters, etc., TSM2N60CH-VB can provide high withstand voltage and appropriate current carrying capacity to ensure stable power switching operation of the equipment.
3. **Industrial Power System**: This MOSFET is suitable for industrial power modules, especially high voltage switching circuits, such as switching power supplies and power tool power management modules in industrial control systems. It can handle higher voltage requirements and work normally at lower currents.
4. **Power Conversion and Switching Power Supply**: TSM2N60CH-VB can be used for switching power supplies in high voltage power conversion systems, especially in power inverters and power regulation modules, where it provides high voltage support for high power but low current applications.
5. **Battery Charging System**: In the battery management system, TSM2N60CH-VB can be used for battery charging management in high-voltage areas. With its 650V withstand voltage capability, it can stably perform charging control and current regulation in high-voltage battery systems to ensure safety and efficiency during the charging process.
1. **High Voltage Power Management**: TSM2N60CH-VB is often used in power management systems that require high voltage protection and voltage regulation. For example, in power adapters, voltage regulation modules, and AC-DC converters, it can effectively manage 650V voltage to ensure stable system operation.
2. **Home Appliances and Power Control**: In the power switching circuits of home appliances such as air conditioners, electric water heaters, etc., TSM2N60CH-VB can provide high withstand voltage and appropriate current carrying capacity to ensure stable power switching operation of the equipment.
3. **Industrial Power System**: This MOSFET is suitable for industrial power modules, especially high voltage switching circuits, such as switching power supplies and power tool power management modules in industrial control systems. It can handle higher voltage requirements and work normally at lower currents.
4. **Power Conversion and Switching Power Supply**: TSM2N60CH-VB can be used for switching power supplies in high voltage power conversion systems, especially in power inverters and power regulation modules, where it provides high voltage support for high power but low current applications.
5. **Battery Charging System**: In the battery management system, TSM2N60CH-VB can be used for battery charging management in high-voltage areas. With its 650V withstand voltage capability, it can stably perform charging control and current regulation in high-voltage battery systems to ensure safety and efficiency during the charging process.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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