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TSM25N03CP RO-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**TSM25N03CP RO-VB** is a **single N-Channel MOSFET** in **TO252 package**, designed for low voltage and high efficiency switching applications. This MOSFET has **30V withstand voltage (VDS)**, stable performance under a wide range of working conditions, and is suitable for multiple low voltage power management and load driving occasions. Its gate source voltage (VGS) supports **±20V** at most, which makes it have strong anti-interference ability and can work stably under various driving conditions. **TSM25N03CP RO-VB**'s **gate threshold voltage (Vth)** is **1.7V**, which means that it can start working at a lower gate voltage and is suitable for low power applications.
The **on resistance (RDS(ON))** of this MOSFET is **7mΩ** at **VGS=10V** and **9mΩ** at **VGS=4.5V**, indicating that it can maintain low conduction loss under normal working conditions and has high current carrying capacity. **TSM25N03CP RO-VB**'s maximum drain current (ID) can reach **70A**, which is very suitable for high current load drive applications. Using **Trench technology**, this MOSFET optimizes switching speed and conduction efficiency, suitable for high frequency and high current applications.
**TSM25N03CP RO-VB** is a **single N-Channel MOSFET** in **TO252 package**, designed for low voltage and high efficiency switching applications. This MOSFET has **30V withstand voltage (VDS)**, stable performance under a wide range of working conditions, and is suitable for multiple low voltage power management and load driving occasions. Its gate source voltage (VGS) supports **±20V** at most, which makes it have strong anti-interference ability and can work stably under various driving conditions. **TSM25N03CP RO-VB**'s **gate threshold voltage (Vth)** is **1.7V**, which means that it can start working at a lower gate voltage and is suitable for low power applications.
The **on resistance (RDS(ON))** of this MOSFET is **7mΩ** at **VGS=10V** and **9mΩ** at **VGS=4.5V**, indicating that it can maintain low conduction loss under normal working conditions and has high current carrying capacity. **TSM25N03CP RO-VB**'s maximum drain current (ID) can reach **70A**, which is very suitable for high current load drive applications. Using **Trench technology**, this MOSFET optimizes switching speed and conduction efficiency, suitable for high frequency and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description:
- **Model**: TSM25N03CP RO-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Maximum power dissipation (Pd)**: According to working conditions and heat dissipation design, it is usually **200W** (depending on the application environment)
- **Operating temperature range**: -55°C to +150°C (depending on manufacturer and application environment)
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: 200A
- **Typical switching characteristics**: low gate charge, fast switching, low conduction losses
- **Input capacitance (Ciss)**: 1800pF (typical, depending on operating conditions)
- **Output capacitance (Coss)**: 50pF (typical)
- **Reverse recovery time (Trr)**: 30ns (typical)
- **Model**: TSM25N03CP RO-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 9mΩ@VGS=4.5V
- 7mΩ@VGS=10V
- **Maximum drain current (ID)**: 70A
- **Maximum power dissipation (Pd)**: According to working conditions and heat dissipation design, it is usually **200W** (depending on the application environment)
- **Operating temperature range**: -55°C to +150°C (depending on manufacturer and application environment)
- **Technology type**: Trench technology
- **Maximum pulse current (IDM)**: 200A
- **Typical switching characteristics**: low gate charge, fast switching, low conduction losses
- **Input capacitance (Ciss)**: 1800pF (typical, depending on operating conditions)
- **Output capacitance (Coss)**: 50pF (typical)
- **Reverse recovery time (Trr)**: 30ns (typical)
Domain and module applications：
3. Application fields and module examples:
**TSM25N03CP RO-VB** is a high-efficiency, low-resistance, high-current N-Channel MOSFET that is ideal for a variety of applications, especially those that require high switching frequencies and low losses. The following are examples of applications of this model in different fields:
# **Low-voltage power management**
**TSM25N03CP RO-VB** is widely used in low-voltage power management modules such as **DC-DC converters** and **Battery Management Systems (BMS)**. In these applications, the low on-resistance (RDS(ON)) and high current carrying capacity of the MOSFET ensure efficient power conversion, especially for efficient power regulation in **portable devices, industrial equipment, and automotive power**.
# **Smart Home and Automation**
In **smart home systems** and **automation control systems**, the TSM25N03CP RO-VB is used to control loads and switch circuits. For example, it can control **electric curtains, electric doors, smart lighting systems** and other devices, providing efficient and stable switching capabilities for smart homes.
**Summary**:
**TSM25N03CP RO-VB** is a MOSFET with **low on-resistance, high current carrying capacity** and **efficient switching characteristics**, suitable for multiple applications of efficient power management and high current load drive. It is widely used in **power management, power tools, automotive electronics, communication equipment, smart home** and other fields, with excellent performance advantages, especially suitable for **high frequency switching, electric drive systems, low power consumption power modules** and other occasions.
**TSM25N03CP RO-VB** is a high-efficiency, low-resistance, high-current N-Channel MOSFET that is ideal for a variety of applications, especially those that require high switching frequencies and low losses. The following are examples of applications of this model in different fields:
# **Low-voltage power management**
**TSM25N03CP RO-VB** is widely used in low-voltage power management modules such as **DC-DC converters** and **Battery Management Systems (BMS)**. In these applications, the low on-resistance (RDS(ON)) and high current carrying capacity of the MOSFET ensure efficient power conversion, especially for efficient power regulation in **portable devices, industrial equipment, and automotive power**.
# **Smart Home and Automation**
In **smart home systems** and **automation control systems**, the TSM25N03CP RO-VB is used to control loads and switch circuits. For example, it can control **electric curtains, electric doors, smart lighting systems** and other devices, providing efficient and stable switching capabilities for smart homes.
**Summary**:
**TSM25N03CP RO-VB** is a MOSFET with **low on-resistance, high current carrying capacity** and **efficient switching characteristics**, suitable for multiple applications of efficient power management and high current load drive. It is widely used in **power management, power tools, automotive electronics, communication equipment, smart home** and other fields, with excellent performance advantages, especially suitable for **high frequency switching, electric drive systems, low power consumption power modules** and other occasions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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