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TSM2313CX RF-VB Product details

Product introduction:

1. Product Introduction

**TSM2313CX RF-VB** is a single P-type MOSFET in SOT23-3 package with -20V drain-source voltage (VDS) and ±12V gate-source voltage (VGS). Its gate threshold voltage (Vth) is -0.8V, and its on-resistance RDS(ON) is 80mΩ (at VGS=2.5V), 65mΩ (at VGS=4.5V) and 60mΩ (at VGS=10V). The maximum continuous drain current is -4A. This MOSFET adopts Trench technology, with low on-resistance, fast switching characteristics and high efficiency, and is particularly suitable for low-power, high-efficiency power management and load switching applications.

TSM2313CX RF-VB performs well in portable devices and low-power applications, can effectively improve the energy efficiency of the system and reduce power loss, and is suitable for power management, battery management, power tools, switching power supply and other modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P -20V 12(±V) -0.8V -4A 80mΩ 60mΩ
2. Detailed parameter description

- **Model**: TSM2313CX RF-VB
- **Package**: SOT23-3
- **Configuration**: Single P-type MOSFET
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 80mΩ @ VGS=2.5V
- 65mΩ @ VGS=4.5V
- 60mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: -4A
- **Technology**: Trench technology
- **Maximum power dissipation (Ptot)**: 1W (typical value, actual power consumption will be calculated based on operating conditions and ambient temperature)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 250°C/W (from junction to heat sink)
- **Application areas**:
- Power management
- Battery management system (BMS)
- Switching mode power supply (SMPS)
- Load switch
- Low power circuit

Domain and module applications:

3. Application fields and module examples

**1. Power management system**
TSM2313CX RF-VB is suitable for power management applications, especially in situations where high efficiency and low power consumption are required. This P-type MOSFET can be used as a switching element in a DC-DC converter to help improve power conversion efficiency and reduce power loss, especially for medium current power modules. For example, it can be used in voltage regulators, linear regulators, or battery-powered devices to help improve the overall energy efficiency of the device.

**2. Battery Management System (BMS)**
In a battery management system (BMS), TSM2313CX RF-VB can be used for battery switching control to ensure that the battery is effectively managed during the charging and discharging process. The low on-resistance of this MOSFET enables it to have efficient performance in battery management, which can avoid unnecessary power loss, thereby improving the performance of the battery system and battery life. It can control functions such as battery charging, discharging and overcurrent protection to ensure the safety and stability of the battery.

**3. Switching Power Supply (SMPS)**
In switching power supply modules, the TSM2313CX RF-VB acts as a low voltage controlled switching MOSFET, which can provide efficient power conversion and reduce system power consumption. Its low on-resistance and fast switching performance make it an ideal choice for efficient SMPS modules. Especially in low power (such as LED drivers, mobile phone chargers and small power adapters), the TSM2313CX RF-VB can improve overall conversion efficiency, reduce heat generation, and extend the service life of the equipment.

**4. Load Switch**
In load switch applications, the TSM2313CX RF-VB can effectively control the flow of current for battery-powered load switching. Its low on-resistance and high switching speed make it very useful in load switches, which can optimize current control and prevent equipment from overheating. For example, the TSM2313CX RF-VB can be used in smart home devices, low-power sensors, remote control devices, etc. as a switching element for power management and load control.

**5. Low-power circuits**
The TSM2313CX RF-VB is ideal for a variety of low-power applications, including portable electronics and mobile devices. It provides efficient switching control in small battery-powered devices, ensuring long-term stable operation of the system. Due to its excellent current control and low on-resistance, it is suitable for power management systems in consumer electronics such as mobile phones, wireless sensors, and smart wearable devices.

**6. Embedded systems and IoT devices**
In embedded systems and IoT (IoT) devices, the TSM2313CX RF-VB is a very suitable switching element. It can effectively manage battery power and provide reliable load control, playing a role in applications such as smart homes, smart devices, and wireless sensors. Due to its small size, low power consumption, and high efficiency, it can help devices reduce energy consumption when working for a long time and improve overall system performance.

**Summary**
TSM2313CX RF-VB is a high-efficiency, low-power P-type MOSFET, which is particularly suitable for applications in power management, battery management, switching power supplies, load switches, and low-power control circuits. With its low on-resistance, excellent switching performance, and high efficiency, this MOSFET can help devices improve overall energy efficiency and reduce power losses, and is suitable for portable devices, IoT devices, smart homes, and other low-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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