Product introduction：
1. Product Introduction:
**TSM2310CX RF-VB** is a **single N-Channel MOSFET** in **SOT23-3 package**, designed for low voltage, high efficiency switching applications. This MOSFET has **20V withstand voltage (VDS)**, suitable for low voltage power supply control, load drive and signal processing circuits. Its gate-source voltage (VGS) supports **±12V** at most, has a low **on-resistance (RDS(ON))**, and exhibits excellent switching performance at different gate voltages, enabling it to operate efficiently in low voltage environments.
**TSM2310CX RF-VB** has a gate threshold voltage (Vth) of **0.5V~1.5V**, enabling it to operate at a lower drive voltage, suitable for applications requiring a low gate voltage. **On-resistance (RDS(ON))** is 28mΩ** at **VGS=4.5V** and 42mΩ** at **VGS=2.5V**, providing a low-loss current channel even at low gate voltages. The maximum drain current (ID) is **6A**, making it suitable for small and medium power load drive applications. This MOSFET uses **Trench technology** to optimize switching performance and current conduction characteristics, reducing switching losses and conduction losses.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
20V |
12（±V） |
0.5~1.5V |
6A |
42mΩ |
|
|
|
2. Detailed parameter description:
- **Model**: TSM2310CX RF-VB
- **Package type**: SOT23-3
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Gate threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 42mΩ@VGS=2.5V
- 28mΩ@VGS=4.5V
- **Maximum drain current (ID)**: 6A
- **Switching characteristics**: Low gate charge, suitable for high-frequency switching applications
- **Operating temperature range**: -55°C to +150°C (depending on the manufacturer)
- **Technology type**: Trench technology
- **Maximum power dissipation (Pd)**: Calculated based on operating conditions and thermal environment
Domain and module applications：
3. Application fields and module examples:
**TSM2310CX RF-VB** has low on-resistance, fast switching and high efficiency, and is suitable for many fields. Here are some typical application scenarios:
# **Low-power power management**
This MOSFET is widely used in **DC-DC converters** and **Battery Management Systems (BMS)**, especially in low-power power management such as portable devices, power tools, and wireless devices. Its low on-resistance and high switching frequency enable it to effectively reduce energy loss and improve system efficiency and stability, making it suitable for use as a power switch in products such as **mobile devices** and **power tools**.
# **Consumer electronics**
In various **consumer electronics**, TSM2310CX RF-VB is widely used as a power switch or signal switch in **smartphones, tablets, wearable devices** and other fields. It can control battery management, audio circuits, display modules and other low-power circuits to help extend battery life and improve system efficiency.
**Summary**:
**TSM2310CX RF-VB** is a low voltage, high efficiency N-Channel MOSFET suitable for low power, low voltage switching applications. It is widely used in**power management, RF switching, smart home, wireless communication equipment**, **sensor modules** and other fields. Its low on-resistance, fast switching characteristics and high efficiency make it an ideal choice for low power systems, especially in**portable devices, home automation, LED driver** and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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