中文
English
TSM1N60SCT B0-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction**
TSM1N60SCT B0-VB is a single N-channel MOSFET in TO92 package with a drain-source voltage (VDS) of 600V, suitable for high voltage switching applications. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, the threshold voltage (Vth) is 2V, and the RDS(ON) is 6667mΩ at VGS=10V, which is suitable for low current and low power circuits. Its maximum drain current (ID) is 1A, and it uses Plannar technology, which is suitable for high voltage and low power switching applications. TSM1N60SCT B0-VB performs well in low power and high efficiency systems, and is widely used in small power supplies, battery protection, and switch control modules.
TSM1N60SCT B0-VB is a single N-channel MOSFET in TO92 package with a drain-source voltage (VDS) of 600V, suitable for high voltage switching applications. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, the threshold voltage (Vth) is 2V, and the RDS(ON) is 6667mΩ at VGS=10V, which is suitable for low current and low power circuits. Its maximum drain current (ID) is 1A, and it uses Plannar technology, which is suitable for high voltage and low power switching applications. TSM1N60SCT B0-VB performs well in low power and high efficiency systems, and is widely used in small power supplies, battery protection, and switch control modules.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. **Detailed parameter description**
| **Parameter** | **Value** |
|----------------|--------------------|
| **Model** | TSM1N60SCT B0-VB |
| **Package** | TO92 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 600V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2V |
| **On-resistance (RDS(ON))** | 6667mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 1A |
| **Technology** | Plannar technology|
| **Parameter** | **Value** |
|----------------|--------------------|
| **Model** | TSM1N60SCT B0-VB |
| **Package** | TO92 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 600V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2V |
| **On-resistance (RDS(ON))** | 6667mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 1A |
| **Technology** | Plannar technology|
Domain and module applications：
3. **Application fields and modules**
The high drain-source voltage capability (600V) and low current characteristics of the TSM1N60SCT B0-VB make it suitable for many fields, especially those that require high voltage switching and lower current control. The following are typical applications of this model in different fields:
- **Power management and protection circuits**: TSM1N60SCT B0-VB is widely used in power management circuits, especially in small switching power supplies, converters, and low-power power systems. Its 600V drain-source voltage and low on-resistance enable it to switch current efficiently, suitable for battery protection, power distribution, and power switching.
- **Battery protection circuit**: In a battery management system (BMS), this MOSFET can be used in a battery protection circuit to avoid unsafe conditions such as overvoltage, overcurrent, or overtemperature. Its high drain-source voltage capability and low current capability enable it to work stably and protect the battery system from damage.
- **Switching Mode Power Supply (SMPS)**: TSM1N60SCT B0-VB is suitable for various switching mode power supplies (SMPS), such as small DC-DC converters, etc., and can achieve efficient power conversion, especially for applications requiring 600V working voltage. It can provide stable switching performance in these power supplies to ensure efficient operation of the system.
- **High Voltage Switching Circuit**: In some high voltage switching circuits, such as relay drive, signal switching circuit, etc., TSM1N60SCT B0-VB is suitable for medium and low power voltage control due to its 600V withstand voltage capability. It can provide effective switching under higher voltage conditions and protect low voltage control systems from excessive voltage.
- **Lighting Control System**: In some low power lighting control systems, TSM1N60SCT B0-VB can be used as a switching element to control the switching and regulation of the power supply. It can work stably under high voltage and provide the necessary protection and stability for the control circuit.
In summary, TSM1N60SCT B0-VB MOSFET is widely used in power management, battery protection, switching power supply and high voltage switch control due to its high drain-source voltage capability of 600V, low on-resistance characteristics and moderate current capability. It is suitable for system design requiring high voltage and low power consumption.
The high drain-source voltage capability (600V) and low current characteristics of the TSM1N60SCT B0-VB make it suitable for many fields, especially those that require high voltage switching and lower current control. The following are typical applications of this model in different fields:
- **Power management and protection circuits**: TSM1N60SCT B0-VB is widely used in power management circuits, especially in small switching power supplies, converters, and low-power power systems. Its 600V drain-source voltage and low on-resistance enable it to switch current efficiently, suitable for battery protection, power distribution, and power switching.
- **Battery protection circuit**: In a battery management system (BMS), this MOSFET can be used in a battery protection circuit to avoid unsafe conditions such as overvoltage, overcurrent, or overtemperature. Its high drain-source voltage capability and low current capability enable it to work stably and protect the battery system from damage.
- **Switching Mode Power Supply (SMPS)**: TSM1N60SCT B0-VB is suitable for various switching mode power supplies (SMPS), such as small DC-DC converters, etc., and can achieve efficient power conversion, especially for applications requiring 600V working voltage. It can provide stable switching performance in these power supplies to ensure efficient operation of the system.
- **High Voltage Switching Circuit**: In some high voltage switching circuits, such as relay drive, signal switching circuit, etc., TSM1N60SCT B0-VB is suitable for medium and low power voltage control due to its 600V withstand voltage capability. It can provide effective switching under higher voltage conditions and protect low voltage control systems from excessive voltage.
- **Lighting Control System**: In some low power lighting control systems, TSM1N60SCT B0-VB can be used as a switching element to control the switching and regulation of the power supply. It can work stably under high voltage and provide the necessary protection and stability for the control circuit.
In summary, TSM1N60SCT B0-VB MOSFET is widely used in power management, battery protection, switching power supply and high voltage switch control due to its high drain-source voltage capability of 600V, low on-resistance characteristics and moderate current capability. It is suitable for system design requiring high voltage and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
