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TSM1N50CT B0-VB Product details
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1. Product Introduction
**TSM1N50CT B0-VB** is a single N-type MOSFET in TO92 package with 600V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). Its gate threshold voltage (Vth) is 2V, on-resistance RDS(ON) is 6667mΩ (at VGS=10V), and maximum continuous drain current is 1A. The device is designed with planar technology and has good thermal management and stability.
This MOSFET is suitable for medium voltage applications and can provide relatively stable operating performance in higher voltage environments. Although its on-resistance is relatively high, it can still provide good efficiency and reliability in some low-power, low-current applications, especially in switching power supplies, battery management and load switches at medium voltages.
**TSM1N50CT B0-VB** is a single N-type MOSFET in TO92 package with 600V drain-source voltage (VDS) and ±20V gate-source voltage (VGS). Its gate threshold voltage (Vth) is 2V, on-resistance RDS(ON) is 6667mΩ (at VGS=10V), and maximum continuous drain current is 1A. The device is designed with planar technology and has good thermal management and stability.
This MOSFET is suitable for medium voltage applications and can provide relatively stable operating performance in higher voltage environments. Although its on-resistance is relatively high, it can still provide good efficiency and reliability in some low-power, low-current applications, especially in switching power supplies, battery management and load switches at medium voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
2. Detailed parameter description
- **Model**: TSM1N50CT B0-VB
- **Package**: TO92
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 6667mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 1A
- **Technology**: Planar technology (Plannar)
- **Maximum power dissipation (Ptot)**: 200mW (typical value, adjusted according to working conditions in actual application)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 60°C/W (from junction to heat sink)
- **Application Areas**:
- Medium Voltage Switching Power Supplies
- Battery Management Systems (BMS)
- Load Switches
- Low Power Control Circuits
- Test Equipment & Instruments
- **Model**: TSM1N50CT B0-VB
- **Package**: TO92
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2V
- **On-resistance (RDS(ON))**: 6667mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 1A
- **Technology**: Planar technology (Plannar)
- **Maximum power dissipation (Ptot)**: 200mW (typical value, adjusted according to working conditions in actual application)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 60°C/W (from junction to heat sink)
- **Application Areas**:
- Medium Voltage Switching Power Supplies
- Battery Management Systems (BMS)
- Load Switches
- Low Power Control Circuits
- Test Equipment & Instruments
Domain and module applications：
3. Application fields and module examples
**1. Medium voltage switching power supply**
TSM1N50CT B0-VB is very suitable for medium voltage (up to 600V) switching power supply applications, especially in low power applications that require precise control of voltage and current. It can be used as a switching element in power modules such as DC-DC converters and battery chargers, and is particularly suitable for applications with low power (less than 1W) and stability requirements.
**2. Battery Management System (BMS)**
In the battery management system, TSM1N50CT B0-VB can be used as a battery protection and switch control element. It can control the charging and discharging process to prevent faults such as overcharging, over-discharging or short circuit. Although the on-resistance of this MOSFET is high, its performance can still meet the requirements in low current and medium voltage battery management applications to ensure the safety and stability of the battery system.
**3. Load Switch**
In load switch applications that require high voltage control, the TSM1N50CT B0-VB can be used as a switching element to control the load of low-power devices. It can help switch circuits in different working states and is widely used in low-power applications such as small battery-powered devices and sensor modules.
**4. Low-Power Control Circuit**
This MOSFET is suitable for use in low-power control circuits, such as power switches in microcontrollers (MCUs) or sensor modules. When the device is in standby mode, the TSM1N50CT B0-VB can cut off the power supply to help reduce energy consumption. In addition, it is also commonly used in low-power switching circuit designs, such as power management modules in smart home devices.
**5. Test Equipment and Instruments**
Because the TSM1N50CT B0-VB has a high gate threshold voltage and moderate current carrying capacity, it can also play a role in some low-power test equipment. For example, it is used to simulate switching operations in power supplies, battery tests, and load tests.
**Summary**
TSM1N50CT B0-VB is a medium voltage, low current MOSFET suitable for use in switching power supplies, battery management, load switches, etc. In a high voltage environment, it can provide stable operating performance and is suitable for low power and medium current applications, especially for battery drives, control circuits, and test equipment.
**1. Medium voltage switching power supply**
TSM1N50CT B0-VB is very suitable for medium voltage (up to 600V) switching power supply applications, especially in low power applications that require precise control of voltage and current. It can be used as a switching element in power modules such as DC-DC converters and battery chargers, and is particularly suitable for applications with low power (less than 1W) and stability requirements.
**2. Battery Management System (BMS)**
In the battery management system, TSM1N50CT B0-VB can be used as a battery protection and switch control element. It can control the charging and discharging process to prevent faults such as overcharging, over-discharging or short circuit. Although the on-resistance of this MOSFET is high, its performance can still meet the requirements in low current and medium voltage battery management applications to ensure the safety and stability of the battery system.
**3. Load Switch**
In load switch applications that require high voltage control, the TSM1N50CT B0-VB can be used as a switching element to control the load of low-power devices. It can help switch circuits in different working states and is widely used in low-power applications such as small battery-powered devices and sensor modules.
**4. Low-Power Control Circuit**
This MOSFET is suitable for use in low-power control circuits, such as power switches in microcontrollers (MCUs) or sensor modules. When the device is in standby mode, the TSM1N50CT B0-VB can cut off the power supply to help reduce energy consumption. In addition, it is also commonly used in low-power switching circuit designs, such as power management modules in smart home devices.
**5. Test Equipment and Instruments**
Because the TSM1N50CT B0-VB has a high gate threshold voltage and moderate current carrying capacity, it can also play a role in some low-power test equipment. For example, it is used to simulate switching operations in power supplies, battery tests, and load tests.
**Summary**
TSM1N50CT B0-VB is a medium voltage, low current MOSFET suitable for use in switching power supplies, battery management, load switches, etc. In a high voltage environment, it can provide stable operating performance and is suitable for low power and medium current applications, especially for battery drives, control circuits, and test equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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