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TSM1N50CT A3-VB Product details
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TSM1N50CT A3-VB MOSFET Product Introduction
TSM1N50CT A3-VB is a unipolar N-Channel power MOSFET in TO92 package, mainly used in medium and low power high voltage switching control systems. The maximum drain-source voltage (V_DS) of this MOSFET is 600V, which is suitable for applications such as high voltage switching power supplies, industrial control and protection circuits. Its maximum gate-source voltage (V_GS) is ±20V, and the turn-on voltage threshold (V_th) is 2V, which means that it can be turned on at a lower gate voltage. The on-resistance (R_DS(on)) of this MOSFET is 6667mΩ (at V_GS=10V), and the maximum drain current (I_D) supported is 1A. It is manufactured using a planar process (Plannar), ensuring relatively stable performance. Although the current carrying capacity of this MOSFET is low (1A), it is very suitable for systems that require a high withstand voltage of 600V and a small current.
TSM1N50CT A3-VB is a unipolar N-Channel power MOSFET in TO92 package, mainly used in medium and low power high voltage switching control systems. The maximum drain-source voltage (V_DS) of this MOSFET is 600V, which is suitable for applications such as high voltage switching power supplies, industrial control and protection circuits. Its maximum gate-source voltage (V_GS) is ±20V, and the turn-on voltage threshold (V_th) is 2V, which means that it can be turned on at a lower gate voltage. The on-resistance (R_DS(on)) of this MOSFET is 6667mΩ (at V_GS=10V), and the maximum drain current (I_D) supported is 1A. It is manufactured using a planar process (Plannar), ensuring relatively stable performance. Although the current carrying capacity of this MOSFET is low (1A), it is very suitable for systems that require a high withstand voltage of 600V and a small current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | 6667mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 600V | 2V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
TSM1N50CT A3-VB MOSFET Detailed parameter description
- **Package type (Package)**: TO92
- **Configuration (Configuration)**: Unipolar N-Channel
- **Maximum drain-source voltage (V_DS)**: 600V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Turbo on voltage threshold (V_th)**: 2V
- **On-resistance (R_DS(on))**: 6667mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 1A
- **Process technology (Technology)**: Planar process (Plannar)
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
- **Package type (Package)**: TO92
- **Configuration (Configuration)**: Unipolar N-Channel
- **Maximum drain-source voltage (V_DS)**: 600V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Turbo on voltage threshold (V_th)**: 2V
- **On-resistance (R_DS(on))**: 6667mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 1A
- **Process technology (Technology)**: Planar process (Plannar)
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
Domain and module applications：
TSM1N50CT A3-VB MOSFET Applications and Module Examples
1. **Switching Power Supplies**
TSM1N50CT A3-VB is very suitable for medium and low power switching power supplies (such as DC-DC converters, AC-DC adapters, etc.) due to its 600V withstand voltage and moderate on-resistance (R_DS(on) 6667mΩ). This MOSFET provides stable power conversion in power modules that require high withstand voltage and low current, ensuring that the system can effectively control voltage and current.
2. **Battery Management Systems (BMS)**
In electric vehicles or other battery management systems (BMS), TSM1N50CT A3-VB can handle 600V voltage and perform battery charge and discharge control, especially for low current (1A) applications. It can be used to perform functions such as battery overvoltage protection and overcurrent protection to ensure that the system operates within a safe voltage and current range.
3. **Protection Circuits**
TSM1N50CT A3-VB is suitable for various circuits that require high voltage protection, especially in load overcurrent or overvoltage protection circuits. Its 600V drain-source withstand voltage enables it to take on a protective role and prevent the system from being damaged by high voltage or sudden current.
4. **Home Appliances & Small Power Devices**
TSM1N50CT A3-VB is suitable for use in some low-power home appliances or power devices, such as battery-powered devices, power modules, etc. Its high withstand voltage and moderate current carrying capacity make it suitable for switch control systems in small home appliances or electronic devices, providing reliable power management and stable switching operation.
5. **Low Power Switching Control**
In some low-power switch control systems, such as relay drive circuits, control switch circuits, etc., TSM1N50CT A3-VB can be used as a high-voltage switch element to meet the switching needs of lower current (1A). Such applications usually require control at higher voltages while requiring lower power loss. TSM1N50CT A3-VB fully adapts to these needs.
6. **Signal Conditioning & Amplification**
TSM1N50CT A3-VB can also be used in signal conditioning and amplification circuits, especially in the amplification and conditioning of high-voltage signals. Its high drain-source voltage capability enables it to provide stable performance in signal conditioning modules in industrial equipment and communication equipment.
In short, TSM1N50CT A3-VB is a medium-to-low power MOSFET with a high withstand voltage of 600V. It is suitable for multiple fields such as switching power supplies, battery management, protection circuits, home appliances, small power equipment, etc., especially for applications that require high withstand voltage, low current and low power.
1. **Switching Power Supplies**
TSM1N50CT A3-VB is very suitable for medium and low power switching power supplies (such as DC-DC converters, AC-DC adapters, etc.) due to its 600V withstand voltage and moderate on-resistance (R_DS(on) 6667mΩ). This MOSFET provides stable power conversion in power modules that require high withstand voltage and low current, ensuring that the system can effectively control voltage and current.
2. **Battery Management Systems (BMS)**
In electric vehicles or other battery management systems (BMS), TSM1N50CT A3-VB can handle 600V voltage and perform battery charge and discharge control, especially for low current (1A) applications. It can be used to perform functions such as battery overvoltage protection and overcurrent protection to ensure that the system operates within a safe voltage and current range.
3. **Protection Circuits**
TSM1N50CT A3-VB is suitable for various circuits that require high voltage protection, especially in load overcurrent or overvoltage protection circuits. Its 600V drain-source withstand voltage enables it to take on a protective role and prevent the system from being damaged by high voltage or sudden current.
4. **Home Appliances & Small Power Devices**
TSM1N50CT A3-VB is suitable for use in some low-power home appliances or power devices, such as battery-powered devices, power modules, etc. Its high withstand voltage and moderate current carrying capacity make it suitable for switch control systems in small home appliances or electronic devices, providing reliable power management and stable switching operation.
5. **Low Power Switching Control**
In some low-power switch control systems, such as relay drive circuits, control switch circuits, etc., TSM1N50CT A3-VB can be used as a high-voltage switch element to meet the switching needs of lower current (1A). Such applications usually require control at higher voltages while requiring lower power loss. TSM1N50CT A3-VB fully adapts to these needs.
6. **Signal Conditioning & Amplification**
TSM1N50CT A3-VB can also be used in signal conditioning and amplification circuits, especially in the amplification and conditioning of high-voltage signals. Its high drain-source voltage capability enables it to provide stable performance in signal conditioning modules in industrial equipment and communication equipment.
In short, TSM1N50CT A3-VB is a medium-to-low power MOSFET with a high withstand voltage of 600V. It is suitable for multiple fields such as switching power supplies, battery management, protection circuits, home appliances, small power equipment, etc., especially for applications that require high withstand voltage, low current and low power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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