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TSM10P06CPROG-VB Product details

Product introduction:

TSM10P06CPROG-VB is a single P-channel MOSFET in TO252 package with a drain-source voltage (VDS) of -60V. The maximum gate-source voltage (VGS) of this MOSFET is ±20V, the threshold voltage (Vth) is -1.7V, the RDS(ON) is 100mΩ at VGS=4.5V and 90mΩ at VGS=10V, and it has low on-resistance characteristics. The maximum drain current (ID) is -30A, and the Trench technology is used, which performs well in high current carrying and high-efficiency switching applications. TSM10P06CPROG-VB is widely used in power control, power management and various high-efficiency circuit designs, and can provide reliable performance under the requirements of low power consumption and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

2. **Detailed parameter description**

| **Parameter** | **Value** |
|----------------|-----------------|
| **Model** | TSM10P06CPROG-VB|
| **Package** | TO252 |
| **Configuration** | Single P-channel|
| **Drain-source voltage (VDS)** | -60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 100mΩ (VGS=4.5V)
90mΩ (VGS=10V) |
| **Maximum drain current (ID)** | -30A |
| **Technology** | Trench technology|

Domain and module applications:

**Application fields and modules**

The low RDS(ON) characteristics and high current capability of the TSM10P06CPROG-VB MOSFET make it widely used in multiple fields and modules. The following are typical applications of this model in different fields:

- **DC-DC converter**: In DC-DC converters, the TSM10P06CPROG-VB is often used as a current switching element to improve conversion efficiency and reduce energy loss. Its low RDS(ON) characteristics ensure minimal power loss under high current loads.

- **Battery Management System (BMS)**: In battery management systems, this MOSFET is suitable for battery charge and discharge management, especially in application scenarios that require high efficiency and fast response. Its low on-resistance and high current carrying capacity ensure the stability and efficiency of the system.

- **Load switch circuit**: TSM10P06CPROG-VB is suitable for load switch applications. It can provide efficient current control when the load is connected and disconnected. It is widely used in power control and power-off protection circuits.

- **Electric drive system**: This P-channel MOSFET is commonly used in electric drive systems, such as power tools, electric vehicles, etc., as a switching element to control the start, stop and speed regulation of the motor. It can work stably under high current and high power conditions to ensure the reliability of the system.

- **Power management and protection circuit**: In various power management and protection circuits, TSM10P06CPROG-VB can be used as a switching element for power switching, overcurrent protection, reverse voltage protection and other functions, providing efficient power control capabilities.

In summary, TSM10P06CPROG-VB is widely used in various high-current, high-power conversion and management circuits due to its high current capability, low RDS(ON) characteristics and high-efficiency switching characteristics, and is especially suitable for system designs requiring high performance and low power consumption.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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