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TSK20N50M-VB Product details
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1. **Product Introduction: TSK20N50M-VB**
TSK20N50M-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (V_DS) of 500V, this model is suitable for a variety of power management, electric vehicles and industrial control systems. With a threshold voltage (V_th) of 3.8V and a low on-resistance (R_DS(ON) = 80mΩ@V_GS=10V), this MOSFET can maintain low power loss at high currents. This MOSFET adopts SJ_Multi-EPI technology, providing superior conductivity and efficient thermal management, and can operate stably in harsh working environments.
TSK20N50M-VB is a high-performance N-channel power MOSFET in TO247 package, designed for high voltage and high current applications. With a drain-source voltage (V_DS) of 500V, this model is suitable for a variety of power management, electric vehicles and industrial control systems. With a threshold voltage (V_th) of 3.8V and a low on-resistance (R_DS(ON) = 80mΩ@V_GS=10V), this MOSFET can maintain low power loss at high currents. This MOSFET adopts SJ_Multi-EPI technology, providing superior conductivity and efficient thermal management, and can operate stably in harsh working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **Detailed parameter description:**
- **Model**: TSK20N50M-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 500V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Maximum power loss**: Estimated based on actual conditions (heat sink, ambient temperature, etc.)
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for medium and high frequency switching applications
- **Maximum drain-source voltage**: 500V, ensuring stability and safety for high voltage applications
- **Gate drive voltage range**: ±30V, providing wider compatibility
- **Model**: TSK20N50M-VB
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Drain-source voltage (V_DS)**: 500V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 40A
- **Technology type**: SJ_Multi-EPI
- **Maximum power loss**: Estimated based on actual conditions (heat sink, ambient temperature, etc.)
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Suitable for medium and high frequency switching applications
- **Maximum drain-source voltage**: 500V, ensuring stability and safety for high voltage applications
- **Gate drive voltage range**: ±30V, providing wider compatibility
Domain and module applications：
3. **Application fields and module examples:**
1. **Power management system**
TSK20N50M-VB is suitable for high-voltage power management systems, especially in modules that require efficient switching, such as DC power supplies, inverters, and battery management systems. Due to its high voltage (500V) and high current (40A) characteristics, it can provide stable performance in higher power applications while maintaining low on-resistance and reducing power losses.
2. **Industrial motor drive**
In motor drive systems, TSK20N50M-VB can be used to control the start and stop and speed regulation of motors, especially in industrial equipment that requires high voltage and high current. Due to its good voltage resistance and conductivity, this MOSFET can effectively improve the efficiency and reliability of motor control and is suitable for equipment such as power tools, fans and pumps.
3. **Electric vehicles (EV) and battery management systems (BMS)**
Electric vehicles and battery management systems require efficient power electronics to achieve high-voltage, high-current battery charging and discharging management. The TSK20N50M-VB is well suited for these applications, providing efficient current control and conversion while ensuring safe operation at high voltages.
4. **Solar Inverter**
In solar inverters, the TSK20N50M-VB can effectively control the voltage conversion of solar panels and ensure stable operation of the system. Under high voltage and high current working conditions, this MOSFET can provide low switching losses and high efficiency, making it very suitable for energy conversion and distribution modules.
5. **Switching Power Supply (SMPS)**
Switching power supplies are widely used in modern electronic devices. As an efficient switching element, the TSK20N50M-VB can be used to improve the conversion efficiency of power supply, reduce heat generation, and extend the life of equipment. Especially in areas where high voltage is required, such as computer power supplies, battery chargers, etc., its excellent performance can be demonstrated.
In summary, the TSK20N50M-VB is a MOSFET with high voltage, low on-resistance and high current handling capabilities, suitable for a variety of efficient power conversion and power management applications. Its reliable performance and efficient working characteristics make it an ideal choice for industrial control, electric vehicles, solar inverters and other fields.
1. **Power management system**
TSK20N50M-VB is suitable for high-voltage power management systems, especially in modules that require efficient switching, such as DC power supplies, inverters, and battery management systems. Due to its high voltage (500V) and high current (40A) characteristics, it can provide stable performance in higher power applications while maintaining low on-resistance and reducing power losses.
2. **Industrial motor drive**
In motor drive systems, TSK20N50M-VB can be used to control the start and stop and speed regulation of motors, especially in industrial equipment that requires high voltage and high current. Due to its good voltage resistance and conductivity, this MOSFET can effectively improve the efficiency and reliability of motor control and is suitable for equipment such as power tools, fans and pumps.
3. **Electric vehicles (EV) and battery management systems (BMS)**
Electric vehicles and battery management systems require efficient power electronics to achieve high-voltage, high-current battery charging and discharging management. The TSK20N50M-VB is well suited for these applications, providing efficient current control and conversion while ensuring safe operation at high voltages.
4. **Solar Inverter**
In solar inverters, the TSK20N50M-VB can effectively control the voltage conversion of solar panels and ensure stable operation of the system. Under high voltage and high current working conditions, this MOSFET can provide low switching losses and high efficiency, making it very suitable for energy conversion and distribution modules.
5. **Switching Power Supply (SMPS)**
Switching power supplies are widely used in modern electronic devices. As an efficient switching element, the TSK20N50M-VB can be used to improve the conversion efficiency of power supply, reduce heat generation, and extend the life of equipment. Especially in areas where high voltage is required, such as computer power supplies, battery chargers, etc., its excellent performance can be demonstrated.
In summary, the TSK20N50M-VB is a MOSFET with high voltage, low on-resistance and high current handling capabilities, suitable for a variety of efficient power conversion and power management applications. Its reliable performance and efficient working characteristics make it an ideal choice for industrial control, electric vehicles, solar inverters and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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