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TSF8N65M-VB Product details
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TSF8N65M-VB MOSFET Product Introduction
TSF8N65M-VB is a unipolar N-channel power MOSFET with a 650V withstand voltage capability, suitable for high voltage drive applications. It adopts TO220F package and can withstand high voltage and high current load. It is manufactured using planar technology (Plannar), providing excellent switching performance and low on-resistance (RDS(ON)), making it an ideal choice for applications such as high-efficiency power management and high-voltage conversion.
TSF8N65M-VB is a unipolar N-channel power MOSFET with a 650V withstand voltage capability, suitable for high voltage drive applications. It adopts TO220F package and can withstand high voltage and high current load. It is manufactured using planar technology (Plannar), providing excellent switching performance and low on-resistance (RDS(ON)), making it an ideal choice for applications such as high-efficiency power management and high-voltage conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
TSF8N65M-VB MOSFET parameter description
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 7A
- **Technology**: Plannar
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Withstand voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 7A
- **Technology**: Plannar
Domain and module applications：
TSF8N65M-VB MOSFET Application Fields and Modules
1. **Power Management**:
TSF8N65M-VB plays an important role in high-voltage power management, especially for switch mode power supplies (SMPS) and battery management systems. Due to its higher VDS and lower RDS(ON), this MOSFET can effectively reduce energy loss and improve system efficiency, and is suitable for high-power power modules.
2. **Power Tools and Household Appliances**:
In the power conversion modules of power tools and household appliances, this MOSFET provides efficient current switching capability, helping the equipment achieve higher power density and longer service life. Due to its high withstand voltage, it can withstand the transient overvoltage common in power tools, ensuring the reliability of the system.
3. **Power Converters**:
TSF8N65M-VB is widely used in power converters (such as inverters and DC-AC converters). Its high withstand voltage and low on-resistance make it very suitable for use as a key switching element in the DC-AC or AC-DC conversion process, which can effectively reduce energy loss and improve overall conversion efficiency.
4. **Electric vehicle charging system**:
In the power electronics module of the electric vehicle charging station, TSF8N65M-VB can be used as a power switching element to help efficiently convert and manage the battery charging process, especially in applications that require high withstand voltage and high stability.
5. **LED drive circuit**:
In the LED drive circuit, TSF8N65M-VB MOSFET provides stable switching performance, especially suitable for brightness adjustment and constant current control in high-voltage LED power supplies. Its high VDS and low RDS(ON) can effectively reduce power loss and improve the overall efficiency of the system.
These application examples show the importance of TSF8N65M-VB MOSFET in high-voltage, high-efficiency systems. Its unique performance characteristics enable it to be widely used in various high-voltage power conversion, drive and protection circuits.
1. **Power Management**:
TSF8N65M-VB plays an important role in high-voltage power management, especially for switch mode power supplies (SMPS) and battery management systems. Due to its higher VDS and lower RDS(ON), this MOSFET can effectively reduce energy loss and improve system efficiency, and is suitable for high-power power modules.
2. **Power Tools and Household Appliances**:
In the power conversion modules of power tools and household appliances, this MOSFET provides efficient current switching capability, helping the equipment achieve higher power density and longer service life. Due to its high withstand voltage, it can withstand the transient overvoltage common in power tools, ensuring the reliability of the system.
3. **Power Converters**:
TSF8N65M-VB is widely used in power converters (such as inverters and DC-AC converters). Its high withstand voltage and low on-resistance make it very suitable for use as a key switching element in the DC-AC or AC-DC conversion process, which can effectively reduce energy loss and improve overall conversion efficiency.
4. **Electric vehicle charging system**:
In the power electronics module of the electric vehicle charging station, TSF8N65M-VB can be used as a power switching element to help efficiently convert and manage the battery charging process, especially in applications that require high withstand voltage and high stability.
5. **LED drive circuit**:
In the LED drive circuit, TSF8N65M-VB MOSFET provides stable switching performance, especially suitable for brightness adjustment and constant current control in high-voltage LED power supplies. Its high VDS and low RDS(ON) can effectively reduce power loss and improve the overall efficiency of the system.
These application examples show the importance of TSF8N65M-VB MOSFET in high-voltage, high-efficiency systems. Its unique performance characteristics enable it to be widely used in various high-voltage power conversion, drive and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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