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TSF840M-VB Product details

Product introduction:

1. Product Introduction

**TSF840M-VB** is a high voltage unipolar N-type MOSFET in TO220F package with a drain-source voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V. The gate threshold voltage (Vth) of the device is 3.5V, and the on-resistance RDS(ON) when turned on is 680mΩ (at VGS=10V). Its maximum continuous current is 12A, and it is designed with planar technology, suitable for applications with high efficiency, reliability and high voltage requirements.

This MOSFET has a low on-resistance and is suitable for applications requiring higher current drive and high voltage environment, providing high efficiency and thermal management capabilities, especially in applications such as power management, motor drive and switching power supply.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description

- **Model**: TSF840M-VB
- **Package**: TO220F
- **Configuration**: Single N-type MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 680mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 12A
- **Technology**: Plannar
- **Maximum power dissipation (Ptot)**: 90W (typical value, more detailed thermal parameters can be provided according to specific applications)
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: 1.8°C/W (from junction to heat sink)
- **Application areas**:
- Switching power supply (SMPS)
- Motor drive
- DC/AC power conversion
- Battery management system (BMS)
- Power tool drive
- LED drive

Domain and module applications:

3. Application fields and module examples

**1. Switching power supply (SMPS) **
TSF840M-VB can be used for high-voltage switching modules in switching power supplies, especially for applications that require high efficiency, such as battery chargers, UPS (uninterruptible power supply) and high-power adapters. Its high VDS and low on-resistance make it suitable for high-efficiency power converters, reducing energy loss during the switching process and improving overall system efficiency.

**2. Motor drive **
In motor drive systems, the high voltage and high current characteristics of TSF840M-VB make it an ideal choice. Especially in industrial automation equipment, robot control and power tool drives that need to drive high-power motors, MOSFET can respond quickly to gate drive signals and provide a stable current path to ensure efficient operation of the drive system.

**3. Battery management system (BMS) **
In the battery management system (BMS), TSF840M-VB can be used as a switch control element in the battery pack to control the charging and discharging process. Its low on-resistance and high voltage withstand capability make it very reliable in battery management, able to withstand higher voltages without causing excessive heat loss, extending the overall service life of the system.

**4. LED driver power supply**
TSF840M-VB is also suitable for LED driver power supply, especially in applications that require stable current control and high efficiency. MOSFET can quickly respond to changes in the switching frequency of the LED driver power supply while withstanding high voltage, thereby providing a stable current supply to ensure long-term stable operation of the LED.

**5. Power tool drive module**
TSF840M-VB is widely used in the motor drive circuit of power tools due to its excellent current carrying capacity and low conduction loss. In the case of rapid start and stop or high-power operation of the tool, it can provide a stable drive signal to avoid current fluctuations causing performance degradation or circuit damage.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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