TSF830M-VB Product details
Product introduction:
TSF830M-VB is a unipolar N-Channel power MOSFET in TO220F package. Its maximum drain-source voltage (V_DS) is 650V, which is suitable for high-voltage applications. The maximum gate-source voltage (V_GS) of this MOSFET is ±30V, and it has a high turn-on voltage threshold (V_th) of 3.5V, which is suitable for applications that require higher gate voltage control. At a gate voltage of 10V, the on-resistance (R_DS(on)) of TSF830M-VB is 1100mΩ, and it supports a maximum current (I_D) of 7A. It is manufactured using a planar process (Plannar) and has excellent performance and stability. This device is ideal for high-voltage, high-current environments such as power management, switching power supplies, inverters, industrial drives and electric vehicles.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Unipolar N-Channel
- **Maximum drain-source voltage (V_DS)**: 650V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Turning point voltage threshold (V_th)**: 3.5V
- **On-resistance (R_DS(on))**: 1100mΩ (at V_GS=10V)
- **Maximum drain current (I_D)**: 7A
- **Process technology (Technology)**: Planar process (Plannar)
- **Maximum power dissipation (P_D)**: Not provided
- **Operating temperature range**: Not provided
Domain and module applications:
1. **Switching Power Supplies**
TSF830M-VB is very suitable for power switching devices in switching power supplies (SMPS) due to its high voltage (650V) and low on-resistance (R_DS(on)). This MOSFET can effectively control the switching process of the power current, reduce power loss and improve system efficiency.
2. **Electric Vehicles Battery Management System (BMS)**
In the battery management system (BMS) of electric vehicles, TSF830M-VB can ensure stable operation during battery charging and discharging due to its high V_DS and high voltage resistance, especially in modules such as battery charging control, overvoltage protection and battery balancing control.
3. **Inverters**
In applications such as solar inverters or variable frequency drives, the 650V withstand voltage and low on-resistance of TSF830M-VB enable it to efficiently convert DC to AC, providing efficient and stable energy output, especially in medium-power inverters.
4. **Power Conversion Systems**
TSF830M-VB is widely used as a power switching element in power conversion systems in modules such as DC-DC converters, AC-DC adapters, converters, and power conditioning systems. Its high voltage and low on-resistance make it suitable for efficient power conversion, reducing heat loss and improving system performance.
5. **Industrial Drives**
In industrial motor drive systems, TSF830M-VB can be used for high-speed switching applications, especially in systems that need to control the start, stop and speed regulation of high-power motors, providing stable and reliable switching operations to ensure the high-efficiency operation of the drive.
Through these application examples, it can be seen that TSF830M-VB is mainly suitable for applications that require high voltage, high current and high efficiency, especially in high-voltage power supplies, industrial equipment, and new energy vehicles. It plays an important role.
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