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TSF7N80M-VB Product details
Back to previous pageProduct introduction：
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TSF7N80M-VB is a high voltage N-channel MOSFET in TO220F package, designed for high power applications. Its VDS can withstand up to 800V, suitable for circuits requiring high voltage resistance. The device has an RDS(ON) of 1100mΩ@VGS=10V, which can provide efficient current control with low conduction loss. TSF7N80M-VB adopts SJ_Multi-EPI technology to ensure its stability and reliability in high voltage environment.
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TSF7N80M-VB is a high voltage N-channel MOSFET in TO220F package, designed for high power applications. Its VDS can withstand up to 800V, suitable for circuits requiring high voltage resistance. The device has an RDS(ON) of 1100mΩ@VGS=10V, which can provide efficient current control with low conduction loss. TSF7N80M-VB adopts SJ_Multi-EPI technology to ensure its stability and reliability in high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
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- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 1100mΩ @ VGS=10V
- **ID**: 5A
- **Technology**: SJ_Multi-EPI
**
- **Package**: TO220F
- **Configuration**: Single N-channel
- **VDS**: 800V
- **VGS**: ±30V
- **Vth**: 3.5V
- **RDS(ON)**: 1100mΩ @ VGS=10V
- **ID**: 5A
- **Technology**: SJ_Multi-EPI
**
Domain and module applications：
：**
1. **Power management module**: TSF7N80M-VB is commonly used in applications such as DC-DC converters and power adapters, and can provide efficient current switching control to ensure stable power supply.
2. **High-voltage control circuit**: Due to its 800V VDS, it is suitable for high-voltage drive circuits such as motor drivers and industrial motor controls, and can withstand high voltage fluctuations and loads.
3. **Power electronic equipment**: In renewable energy systems such as wind power generation and solar inverters, TSF7N80M-VB can efficiently handle current to ensure the stability and efficiency of energy conversion.
4. **Home appliances and consumer electronics**: This MOSFET is also suitable for consumer products such as high-voltage switching power supplies and home appliance motor controls. It has high voltage resistance and conduction capabilities to ensure long-term stable operation.
1. **Power management module**: TSF7N80M-VB is commonly used in applications such as DC-DC converters and power adapters, and can provide efficient current switching control to ensure stable power supply.
2. **High-voltage control circuit**: Due to its 800V VDS, it is suitable for high-voltage drive circuits such as motor drivers and industrial motor controls, and can withstand high voltage fluctuations and loads.
3. **Power electronic equipment**: In renewable energy systems such as wind power generation and solar inverters, TSF7N80M-VB can efficiently handle current to ensure the stability and efficiency of energy conversion.
4. **Home appliances and consumer electronics**: This MOSFET is also suitable for consumer products such as high-voltage switching power supplies and home appliance motor controls. It has high voltage resistance and conduction capabilities to ensure long-term stable operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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