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TSF7N60S-VB Product details

Product introduction:

1. **Product Introduction - TSF7N60S-VB**

TSF7N60S-VB is a unipolar N-channel MOSFET in TO220F package for high voltage switching applications. This model has a drain-to-source voltage (V_DS) of 650V and a gate drive voltage (V_GS) of 30V, as well as a threshold voltage (V_th) of 3.5V. Its R_DS(ON) is 680mΩ@V_GS=10V, and the maximum continuous leakage current is 12A. Manufactured using planar technology, this design can effectively control conduction losses and provide high voltage and current carrying capabilities. TSF7N60S-VB is widely used in power management and high power switching applications such as power supplies, converters, switching power supplies and motor control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. **Detailed parameter description**

- **Model**: TSF7N60S-VB
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Drain to Source Voltage(V_DS)**: 650V
- **Gate Drive Voltage(V_GS)**: ±30V
- **Threshold Voltage(V_th)**: 3.5V
- **On-resistance(R_DS(ON))**: 680mΩ @ V_GS=10V
- **Maximum Drain Current(I_D)**: 12A
- **Maximum Power Dissipation**: 75W (Specific power can be calculated based on thermal resistance and working conditions)
- **Technology Type**: Planar Technology
- **Maximum Reverse Recovery Time**: (Typical) 300ns (depending on application frequency and operating conditions)
- **Switching characteristics**:
- Turn-on delay time: 30ns
- Turn-off delay time: 50ns
- Reverse recovery time: 150ns
- **Maximum gate-source voltage**: ±30V
- **Maximum drain-source current (I_D)**: 12A

Domain and module applications:

3. **Applications and Module Examples**

- **Power Management**: TSF7N60S-VB can be widely used in various high-voltage switching power supplies, especially in applications that require high voltage and current capabilities, such as AC-DC power adapters, LED drivers, and power converters. Due to its low R_DS(ON) and high withstand voltage capability, it can provide more efficient energy conversion and reduce losses.

- **Motor Control**: In motor drive modules, TSF7N60S-VB is used as a high-power switching device to control DC motors and stepper motors. It is suitable for high-efficiency motor control systems such as power tools, home appliances, and drones, capable of withstanding high currents and providing fast responses.

- **Electric Vehicles and Battery Management Systems**: TSF7N60S-VB can be used in battery management and charging systems for electric vehicles. Due to its ability to handle higher voltages, it is suitable for use in battery pack management and battery charger designs to ensure system stability and efficiency.

- **Inverters and Renewable Energy Systems**: In solar inverters and wind converters, the TSF7N60S-VB can be used as the main switching element to support efficient power conversion, especially when processing DC current from solar panels or wind turbines, providing the required voltage resistance and efficient switching characteristics.

- **Overvoltage Protection and Power Switching**: Due to its ability to withstand high voltage and high current, the TSF7N60S-VB can be used in various overvoltage protection systems, including power transformers, distribution network protection modules, etc., to ensure the safety and stability of the power system.

In summary, the TSF7N60S-VB is a high-performance MOSFET suitable for a variety of high-voltage, high-current, and high-efficiency conversion power management applications. Its wide applicability in different fields makes it a key power switching element.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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