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TSF20N65S-VB Product details
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Product Introduction
**TSF20N65S-VB** is a **unipolar N-Channel MOSFET**, packaged in **TO220F**, designed for high voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach **650V**, the gate-source voltage (VGS) is **±30V**, and the threshold voltage (Vth) is **3.5V**. When the gate voltage **VGS=10V**, its on-resistance (RDS(ON)) is **160mΩ**, and the maximum drain current (ID) is **20A**. Using **SJ_Multi-EPI technology**, this MOSFET has significant advantages in power electronics applications that handle high voltage and high power.
**TSF20N65S-VB**'s **650V withstand voltage** makes it very suitable for power conversion, inverters, motor drives and other high voltage power switching applications. Low **RDS(ON)** enables it to efficiently control large currents while reducing energy losses and improving system efficiency. It is suitable for **industrial automation, power factor correction (PFC) circuits, solar inverters, switching power supplies (SMPS)** and other fields.
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**TSF20N65S-VB** is a **unipolar N-Channel MOSFET**, packaged in **TO220F**, designed for high voltage, high current applications. The maximum drain-source voltage (VDS) of this MOSFET can reach **650V**, the gate-source voltage (VGS) is **±30V**, and the threshold voltage (Vth) is **3.5V**. When the gate voltage **VGS=10V**, its on-resistance (RDS(ON)) is **160mΩ**, and the maximum drain current (ID) is **20A**. Using **SJ_Multi-EPI technology**, this MOSFET has significant advantages in power electronics applications that handle high voltage and high power.
**TSF20N65S-VB**'s **650V withstand voltage** makes it very suitable for power conversion, inverters, motor drives and other high voltage power switching applications. Low **RDS(ON)** enables it to efficiently control large currents while reducing energy losses and improving system efficiency. It is suitable for **industrial automation, power factor correction (PFC) circuits, solar inverters, switching power supplies (SMPS)** and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **At VGS=10V**: 160mΩ
- **Maximum drain current (ID)**: 20A
- **Power loss (Pd)**: 125W (under typical operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Gate-source current limit**: ±20mA
- **Switching speed**: Suitable for high frequency switching
- **Technology**: SJ_Multi-EPI technology
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- **Package type**: TO220F
- **Configuration**: Unipolar N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **At VGS=10V**: 160mΩ
- **Maximum drain current (ID)**: 20A
- **Power loss (Pd)**: 125W (under typical operating conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Gate-source current limit**: ±20mA
- **Switching speed**: Suitable for high frequency switching
- **Technology**: SJ_Multi-EPI technology
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Domain and module applications：
Application fields and module examples
1. **Switching Power Supplies**
**TSF20N65S-VB** is suitable for high voltage and high power **switching power supplies** (SMPS). The 650V withstand voltage characteristic enables it to handle input from the main grid or other high voltage power sources, and is particularly suitable for DC-AC conversion, power factor correction (PFC), and various high power modules. The **160mΩ on-resistance** of this MOSFET ensures low power loss under high current loads and improves the overall efficiency of the system.
2. **Inverters**
In **inverters**, especially for **solar inverters** and **wind power generation systems**, **TSF20N65S-VB** provides excellent high voltage protection and efficient power conversion capabilities. Its **650V** VDS can meet the high voltage requirements of solar photovoltaic systems and electric vehicle inverters, and the low on-resistance ensures efficient operation of the inverter in high current environments.
3. **Power Factor Correction (PFC) Circuit**
In **Power Factor Correction** (PFC) circuits, **TSF20N65S-VB**'s high voltage withstand capability and low conduction loss make it an ideal choice for improving system efficiency and power quality. Such circuits are often used in **switching power supplies**, especially in applications that need to optimize power factor, reduce harmonic interference, and improve power efficiency.
4. **Motor Drivers**
In **motor drive systems**, especially **industrial motor control** or **home appliance motor control** systems, **TSF20N65S-VB** can be used as a switching element for the motor to control the start, stop, and speed regulation of the motor. This MOSFET can withstand high voltage and high current, ensuring reliable control of current flow under different operating conditions.
5. **Battery Management System (BMS)**
**TSF20N65S-VB** can also be used in **Battery Management System** (BMS), especially in **Electric Vehicle** or **Energy Storage System**. It can control the charging and discharging process of the battery while providing high voltage protection. Its high-efficiency power switching function helps to extend the battery life and improve the overall energy efficiency of the system.
6. **Power Control and Protection Systems**
In **Power Control and Protection Systems**, **TSF20N65S-VB** can be used for power conversion and current switching. Its high voltage tolerance and excellent switching performance can help the system protect other sensitive components when the current is too large or the voltage is too high. It can be widely used in various power systems, such as **grid distribution, overvoltage protection system**, etc.
7. **High-Frequency Switching Circuits**
Due to its **low on-resistance** and **high-speed switching characteristics**, **TSF20N65S-VB** is also suitable for **high-frequency switching circuits**, such as **power modules** in communication equipment** or **RF power amplifiers**. Its high voltage and high current capabilities make it excel in environments that require high-speed switching and high-power control.
8. **LED Drivers**
**TSF20N65S-VB** is suitable for **LED driver** circuits, especially in high-power LED lighting systems that require high voltage and high current support. Due to its efficient power conversion performance, it can improve the energy efficiency of LED driver circuits while ensuring the long life and stability of LED lamps.
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1. **Switching Power Supplies**
**TSF20N65S-VB** is suitable for high voltage and high power **switching power supplies** (SMPS). The 650V withstand voltage characteristic enables it to handle input from the main grid or other high voltage power sources, and is particularly suitable for DC-AC conversion, power factor correction (PFC), and various high power modules. The **160mΩ on-resistance** of this MOSFET ensures low power loss under high current loads and improves the overall efficiency of the system.
2. **Inverters**
In **inverters**, especially for **solar inverters** and **wind power generation systems**, **TSF20N65S-VB** provides excellent high voltage protection and efficient power conversion capabilities. Its **650V** VDS can meet the high voltage requirements of solar photovoltaic systems and electric vehicle inverters, and the low on-resistance ensures efficient operation of the inverter in high current environments.
3. **Power Factor Correction (PFC) Circuit**
In **Power Factor Correction** (PFC) circuits, **TSF20N65S-VB**'s high voltage withstand capability and low conduction loss make it an ideal choice for improving system efficiency and power quality. Such circuits are often used in **switching power supplies**, especially in applications that need to optimize power factor, reduce harmonic interference, and improve power efficiency.
4. **Motor Drivers**
In **motor drive systems**, especially **industrial motor control** or **home appliance motor control** systems, **TSF20N65S-VB** can be used as a switching element for the motor to control the start, stop, and speed regulation of the motor. This MOSFET can withstand high voltage and high current, ensuring reliable control of current flow under different operating conditions.
5. **Battery Management System (BMS)**
**TSF20N65S-VB** can also be used in **Battery Management System** (BMS), especially in **Electric Vehicle** or **Energy Storage System**. It can control the charging and discharging process of the battery while providing high voltage protection. Its high-efficiency power switching function helps to extend the battery life and improve the overall energy efficiency of the system.
6. **Power Control and Protection Systems**
In **Power Control and Protection Systems**, **TSF20N65S-VB** can be used for power conversion and current switching. Its high voltage tolerance and excellent switching performance can help the system protect other sensitive components when the current is too large or the voltage is too high. It can be widely used in various power systems, such as **grid distribution, overvoltage protection system**, etc.
7. **High-Frequency Switching Circuits**
Due to its **low on-resistance** and **high-speed switching characteristics**, **TSF20N65S-VB** is also suitable for **high-frequency switching circuits**, such as **power modules** in communication equipment** or **RF power amplifiers**. Its high voltage and high current capabilities make it excel in environments that require high-speed switching and high-power control.
8. **LED Drivers**
**TSF20N65S-VB** is suitable for **LED driver** circuits, especially in high-power LED lighting systems that require high voltage and high current support. Due to its efficient power conversion performance, it can improve the energy efficiency of LED driver circuits while ensuring the long life and stability of LED lamps.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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