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TSF13N50M-VB Product details
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Product Introduction: TSF13N50M-VB MOSFET
TSF13N50M-VB is a single N-Channel high-voltage MOSFET in TO220F package, designed for high-voltage applications. This model has a maximum drain-source voltage (VDS) of 550V, suitable for high-voltage and high-power applications. Its maximum drain current (ID) is 18A, and it can operate stably under high-voltage and high-current working environments. MOSFET adopts Plannar technology and has a low on-resistance (RDS(ON) = 260mΩ @ VGS = 10V), which can effectively reduce switching losses and improve system efficiency. The gate-source threshold voltage (Vth) of this model is 3V, which is suitable for most power management systems and inverter applications.
Due to its high withstand voltage and good switching characteristics, TSF13N50M-VB can be widely used in high-voltage power supplies, industrial drives, inverters, electric vehicles and power electronics, providing stable and reliable power conversion and control.
TSF13N50M-VB is a single N-Channel high-voltage MOSFET in TO220F package, designed for high-voltage applications. This model has a maximum drain-source voltage (VDS) of 550V, suitable for high-voltage and high-power applications. Its maximum drain current (ID) is 18A, and it can operate stably under high-voltage and high-current working environments. MOSFET adopts Plannar technology and has a low on-resistance (RDS(ON) = 260mΩ @ VGS = 10V), which can effectively reduce switching losses and improve system efficiency. The gate-source threshold voltage (Vth) of this model is 3V, which is suitable for most power management systems and inverter applications.
Due to its high withstand voltage and good switching characteristics, TSF13N50M-VB can be widely used in high-voltage power supplies, industrial drives, inverters, electric vehicles and power electronics, providing stable and reliable power conversion and control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Package type**: TO220F (suitable for high power and high current applications)
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F, suitable for high power heat dissipation design
- **Power loss**: Low on-resistance reduces power loss and improves system efficiency
- **Current density**: Suitable for high power, industrial applications
- **Heat dissipation performance**: TO220F package provides excellent heat dissipation capability, suitable for high power applications
- **Package type**: TO220F (suitable for high power and high current applications)
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 260mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Operating temperature range**: -55°C to 150°C
- **Package size**: TO220F, suitable for high power heat dissipation design
- **Power loss**: Low on-resistance reduces power loss and improves system efficiency
- **Current density**: Suitable for high power, industrial applications
- **Heat dissipation performance**: TO220F package provides excellent heat dissipation capability, suitable for high power applications
Domain and module applications：
Application fields and module examples:
1. **High-voltage power supply and switching power supply (SMPS)**:
TSF13N50M-VB is suitable for high-voltage switching power supply (SMPS), especially in applications requiring high withstand voltage and high current carrying capacity. It can perform power conversion in applications such as computer power supply, battery charger, communication power supply, etc., providing stable and efficient power support for various devices.
2. **Inverter**:
In inverter systems, TSF13N50M-VB can be used for DC-AC power conversion, especially for high-power applications such as solar inverters and electric vehicle inverters. With its 550V withstand voltage and high current carrying capacity, this MOSFET can efficiently convert power, reduce system losses, and improve the working efficiency of the inverter.
3. **Electric Vehicle (EV) Battery Management System (BMS)**:
In the battery management system of electric vehicles, TSF13N50M-VB can be used as a switching element in the battery charging and discharging process. Its high withstand voltage and high current carrying capacity ensure that the current flow can be stably controlled during the charging and discharging process of high-power battery packs, ensuring battery safety and efficient operation.
4. **Industrial Power Supply and Motor Drive**:
TSF13N50M-VB is suitable for industrial power supply and motor drive systems, especially in high-power power conversion and control. Due to its excellent switching performance and high current carrying capacity, it can provide efficient power conversion and is widely used in industrial equipment such as robot drive, power tools, motor control, etc.
5. **Power Electronics and Power Tools**:
TSF13N50M-VB is also suitable for various power electronic equipment, such as power tools, electrical drive systems, etc. Its low on-resistance reduces power loss and improves power conversion efficiency. It can work stably in high-voltage environments and meet the power density and efficiency requirements of power tools.
6. **Solar power generation system**:
In solar power generation systems, TSF13N50M-VB can be used in solar inverters to convert solar energy into AC power required by the power grid. Due to its high withstand voltage and high current characteristics, this MOSFET can carry the high power transmitted from the solar panel, ensuring the stability and efficiency of the system.
7. **Power transmission and distribution system**:
TSF13N50M-VB is suitable for use in power transmission and distribution systems, especially in high-voltage power regulation and conversion processes. It can act as a switching element in the power system to stably control the flow of current and ensure efficient transmission and distribution of power.
1. **High-voltage power supply and switching power supply (SMPS)**:
TSF13N50M-VB is suitable for high-voltage switching power supply (SMPS), especially in applications requiring high withstand voltage and high current carrying capacity. It can perform power conversion in applications such as computer power supply, battery charger, communication power supply, etc., providing stable and efficient power support for various devices.
2. **Inverter**:
In inverter systems, TSF13N50M-VB can be used for DC-AC power conversion, especially for high-power applications such as solar inverters and electric vehicle inverters. With its 550V withstand voltage and high current carrying capacity, this MOSFET can efficiently convert power, reduce system losses, and improve the working efficiency of the inverter.
3. **Electric Vehicle (EV) Battery Management System (BMS)**:
In the battery management system of electric vehicles, TSF13N50M-VB can be used as a switching element in the battery charging and discharging process. Its high withstand voltage and high current carrying capacity ensure that the current flow can be stably controlled during the charging and discharging process of high-power battery packs, ensuring battery safety and efficient operation.
4. **Industrial Power Supply and Motor Drive**:
TSF13N50M-VB is suitable for industrial power supply and motor drive systems, especially in high-power power conversion and control. Due to its excellent switching performance and high current carrying capacity, it can provide efficient power conversion and is widely used in industrial equipment such as robot drive, power tools, motor control, etc.
5. **Power Electronics and Power Tools**:
TSF13N50M-VB is also suitable for various power electronic equipment, such as power tools, electrical drive systems, etc. Its low on-resistance reduces power loss and improves power conversion efficiency. It can work stably in high-voltage environments and meet the power density and efficiency requirements of power tools.
6. **Solar power generation system**:
In solar power generation systems, TSF13N50M-VB can be used in solar inverters to convert solar energy into AC power required by the power grid. Due to its high withstand voltage and high current characteristics, this MOSFET can carry the high power transmitted from the solar panel, ensuring the stability and efficiency of the system.
7. **Power transmission and distribution system**:
TSF13N50M-VB is suitable for use in power transmission and distribution systems, especially in high-voltage power regulation and conversion processes. It can act as a switching element in the power system to stably control the flow of current and ensure efficient transmission and distribution of power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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