TSF10N80M-VB Product details
Product introduction:
TSF10N80M-VB is a single N-channel MOSFET in TO220F package, using SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 800V and a maximum drain current (ID) of 7A. This model has a threshold voltage (Vth) of 3.5V and a relatively high on-resistance (RDS(ON) of 770mΩ @ VGS = 10V), suitable for high-voltage and medium-current power electronics applications. TSF10N80M-VB is particularly suitable for high-voltage, low-to-medium-current power conversion systems such as power management, switching power supplies, inverters, and home appliance control, and can provide stable performance in high-voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | 770mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 770mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Power loss**: Moderate, suitable for high voltage and low current applications
- **Maximum power dissipation**: 75W
- **Operating temperature range**: -55°C to +150°C
- **Technology**: SJ_Multi-EPI
- **Switching speed**: Medium, suitable for low frequency applications
- **Internal resistance**: Relatively high on-resistance, suitable for low current and high voltage applications
Domain and module applications:
TSF10N80M-VB has a high drain-source voltage and moderate on-resistance, making it suitable for applications that require high voltage and high current switching, especially power conversion and power management applications. The following are typical application areas for this model:
# **1. Switching power supply (SMPS)**
TSF10N80M-VB's high VDS characteristics make it very suitable for switching power supplies (SMPS), especially in high voltage and lower current applications such as AC-DC converters, DC-DC converters, etc. It can efficiently control the switching process of the power supply and provide stable output voltage and current, especially for power systems that need to handle high voltage inputs.
- **Typical applications**: AC-DC converters, DC-DC converters, high voltage power modules.
# **6. Lighting Power Supply and Driver**
TSF10N80M-VB is also suitable for LED driver power supply and other lighting power supply systems. It can stably drive high-power LED lighting equipment, and due to its high withstand voltage and medium on-resistance, it can effectively control the loss in the power conversion process.
- **Typical Applications**: LED driver, outdoor lighting power supply, high-voltage lamp control.
Summary
TSF10N80M-VB is a single N-channel MOSFET suitable for high-voltage applications, especially in switching power supplies, inverters, home appliance control, battery management and power protection. Its high drain-source voltage of 800V and drain current of 7A make it suitable for handling high-voltage, low-current power conversion tasks. Although its on-resistance is relatively high, its robust performance and efficient switching capability make it widely used in a variety of power electronic systems.
Technical support:
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