TSF10N60-VB Product details
Product introduction:
**TSF10N60-VB** is a high voltage single N-channel MOSFET in a **TO220F** package with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 10A. The device uses **Plannar** technology and has high switching performance and stable working ability. The **RDS(ON)** of TSF10N60-VB is 830mΩ, which can effectively reduce power loss and is suitable for high-power switching power supplies, motor control, power conversion and other applications. Its higher VDS enables it to maintain stable operation in a high voltage environment, and is widely used in industrial power supplies, high-voltage DC power supplies, AC motor drives and other fields requiring high voltage and current control.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | 830mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Single N-channel MOSFET (Single-N-Channel)
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 830mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 10A
- **Maximum power dissipation (Pd)**: 75W
- **Switching speed**: Fast switching response, suitable for high-frequency switching applications
- **Technology type**: Plannar technology
- **Operating temperature range**: -55°C to +150°C
- **Typical applications**: High power supply, inverter, motor control, switching power supply, etc.
Domain and module applications:
1. **High-power switching power supply**
The 650V high-voltage withstand capability of TSF10N60-VB makes it very suitable for use in high-power switching power supplies, especially in applications such as AC-DC conversion, power conditioning, and power conversion modules. In these applications, the role of MOSFET is to improve system efficiency and reduce energy loss by regulating the switching state of the power supply. Its low on-resistance (RDS(ON)) helps reduce power loss, especially for power systems that require higher voltage and high current.
2. **AC motor drive**
The high voltage characteristics of TSF10N60-VB make it widely used in AC motor drive systems. It can be used as a switching element in the motor drive circuit to control the operating state of the motor. Its high current carrying capacity (10A) ensures high efficiency of the motor drive circuit, and the high VDS can withstand the transient voltage generated when the motor starts. In addition, the stable operating performance of TSF10N60-VB can ensure stable operation of the motor drive system under various load conditions.
3. **Inverter**
In inverter applications, TSF10N60-VB is used as a power switch to convert direct current (DC) into alternating current (AC). Since inverters need to work stably at high voltages, the 650V VDS of TSF10N60-VB is well suited to high voltage environments, especially in systems such as solar inverters, power inverters, and UPS (uninterruptible power supplies). Its low on-resistance results in less energy loss during the switching process, thereby improving the efficiency of the inverter.
4. **Power protection circuit**
Since TSF10N60-VB has high VDS and VGS tolerance, it is also commonly used in power protection circuits. This MOSFET can be used as a key component in overvoltage and overcurrent protection circuits. Its working principle is to protect sensitive power circuits from damage by cutting off the current path when overvoltage or overcurrent occurs. In addition, the high withstand voltage characteristics of MOSFET ensure that the power supply remains stable and safe under abnormal conditions.
5. **High-frequency switching power supply**
Due to the use of Plannar technology, TSF10N60-VB has a faster switching response and is suitable for high-frequency switching power supply applications. In high-frequency conversion, the switching frequency is usually high, so the switching speed of MOSFET is crucial to improving system efficiency. TSF10N60-VB can complete conduction and shutdown in a shorter time, reducing switching losses and improving conversion efficiency. It is widely used in high-frequency power modules such as server power supplies and communication equipment power supplies.
6. **Power conversion system (DC-DC converter)**
In DC-DC converters, the high VDS and current carrying capacity of TSF10N60-VB make it very suitable for high-power conversion applications. MOSFET can control the power transmission path and adjust the output of voltage and current to meet the needs of different loads. Low on-resistance also helps to reduce power loss during the conversion process and improve efficiency and stability.
7. **Automotive Electronic Systems**
In automotive electronic systems, TSF10N60-VB is widely used in modules such as electric drive, battery management, and charging control. Due to its high voltage tolerance, MOSFET can effectively control the switching of the on-board battery power supply to ensure that the charging current and voltage are within a safe range. In addition, it is also suitable for power conversion and control systems in electric vehicles, providing efficient energy conversion and management.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image