TSD7N60S-VB Product details
Product introduction:
**TSD7N60S-VB** is a **Single-N-Channel MOSFET** in **TO252** package, with **650V** maximum drain-source voltage (VDS) and **7A** maximum drain current (ID). This MOSFET uses **SJ_Multi-EPI** technology, which provides high voltage resistance and low on-resistance, and is suitable for use in medium and high voltage applications. Its **Vth (gate threshold voltage)** is **3.5V**, has good control characteristics, and can operate at standard gate voltage. When **VGS=10V**, **RDS(ON)** is **700mΩ**, which is suitable for use as a switching element in occasions with medium current requirements. The design goal of this MOSFET is to provide high voltage resistance, high stability and low conduction loss, suitable for a variety of industrial power supplies and high-voltage switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** |
|---------------------|----------------------|
| **Package** | TO252 |
| **Configuration** | Single-N-Channel |
| **Maximum drain-source voltage (VDS)** | 650V |
| **Maximum gate-source voltage (VGS)** | ±30V |
| **Gate threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 700mΩ@VGS=10V |
| **Maximum drain current (ID)** | 7A |
| **Technology** | SJ_Multi-EPI |
Domain and module applications:
1. **High-voltage power conversion**
The **650V** maximum drain-source voltage of TSD7N60S-VB makes it an ideal choice for **high-voltage power converters**. In **AC-DC power converters** and **DC-DC converters**, TSD7N60S-VB can be used as a switching element to provide efficient power conversion by controlling the transmission of large currents. In **industrial power supplies** and **consumer electronic devices**, especially in applications where high-voltage power conversion is required, TSD7N60S-VB provides a robust solution.
2. **Electric drive systems**
In **electric drive systems**, such as **electric vehicles (EVs)** or **power tools**, TSD7N60S-VB can be used as a power switch in motor control circuits. Its **7A** maximum drain current is suitable for medium-power drive systems, and its **650V** high withstand voltage performance is suitable for battery battery management and high-voltage drive of electric motors.
3. **Inverters and Uninterruptible Power Supplies (UPS)**
This MOSFET is suitable for **inverters** and **uninterruptible power supplies (UPS)**. In **solar inverters** and **wind power inverters**, the TSD7N60S-VB can provide the system with efficient and stable switching performance, especially when operating in a high-voltage environment. This MOSFET can effectively control and convert electrical energy while providing a **650V** voltage withstand capability.
4. **Power Management and Power Modules**
TSD7N60S-VB can be widely used in **power modules** and **power management systems**. For example, in **switching power supplies (SMPS)**, as an efficient switching element, it can reduce energy loss and improve efficiency. In addition, in **industrial automation power management**, it can meet the needs of various high voltage and medium current loads, and is widely used in industrial power supplies, computer power supplies, communication equipment and other occasions.
5. **Lighting and high voltage applications**
In **high voltage lighting systems**, especially **LED driver power supplies** and **outdoor lighting control systems**, TSD7N60S-VB is suitable for applications that require high voltage and high reliability. Its **650V** maximum drain-source voltage enables it to withstand high voltage operation and work stably, suitable for **high power LED drive circuits**, providing long-lasting and stable current switching characteristics.
6. **Home appliances and industrial control**
In **home appliance control systems** and **industrial automation systems**, TSD7N60S-VB can be used as a switching element for **motor drives** and **high voltage power management systems**. This MOSFET is suitable for **electric compressors, variable frequency drives** and **industrial motor control systems**, providing efficient and stable current conversion for these systems.
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