TSA20N50M-VB Product details
Product introduction:
TSA20N50M-VB is a high-performance N-channel MOSFET in TO247 package, designed for high voltage applications, with a drain-source voltage (VDS) of 500V. Equipped with SJ_Multi-EPI technology, this MOSFET has low on-resistance (RDS(ON) = 80mΩ @ VGS = 10V) and high current carrying capacity (ID = 40A), which can effectively cope with high-power switching applications. Its gate-source voltage (VGS) is ±30V and the threshold voltage (Vth) is 3.8V, which is suitable for systems requiring high efficiency, low loss and high voltage resistance. TSA20N50M-VB is widely used in high-power fields such as power conversion, switching power supplies, inverters, etc.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Specification** |
|-----------------------|----------------------------------------|
| **Model** | TSA20N50M-VB |
| **Package** | TO247 |
| **Configuration** | Single N Channel|
| **Maximum Drain-Source Voltage (VDS)** | 500V |
| **Maximum Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.8V |
| **On-Resistance (RDS(ON))** | 80mΩ @ VGS = 10V |
| **Maximum Drain Current (ID)** | 40A |
| **Technology** | SJ_Multi-EPI Technology|
Domain and module applications:
**1. Power electronics and switching power supplies: **
TSA20N50M-VB is suitable for high voltage and high current power electronics applications, especially in switching power supplies (SMPS). Its high withstand voltage and low on-resistance make it a high-efficiency power switching element, widely used in industrial power supplies, communication power supplies and power conversion equipment. In these applications, TSA20N50M-VB can effectively reduce power loss and improve the overall efficiency of the system.
**2. Photovoltaic inverter: **
In solar photovoltaic power generation systems, TSA20N50M-VB is widely used in photovoltaic inverters. The inverter needs to convert direct current (DC) into alternating current (AC), and MOSFETs such as TSA20N50M-VB play an important switching role in this process. Its high withstand voltage characteristics enable it to handle larger voltages, while its low on-resistance reduces energy losses, ensuring high efficiency and stable operation of the inverter.
**3. Electric vehicles and charging systems: **
With the rapid development of electric vehicles and hybrid vehicles, TSA20N50M-VB is also used in electric vehicle charging systems. During the charging process, MOSFETs are used for high-voltage switching operations to ensure safe charging of the battery. The high withstand voltage and high current capabilities provided by this MOSFET make it an ideal choice for electric vehicle charging equipment, providing reliable power conversion and efficient energy management.
**4. Motor drive: **
In motor drive systems, TSA20N50M-VB can be used as a power switch to control the start, stop and speed of the motor. In high-power motor control applications, MOSFETs provide fast and efficient switching operations, thereby improving the efficiency and response speed of the drive system. The high current carrying capacity and low on-resistance of TSA20N50M-VB enable it to cope with complex motor drive requirements.
**5. Battery Management System (BMS): **
In the battery management system, TSA20N50M-VB is used to control the current flow during battery charging and discharging. Its high withstand voltage performance ensures that it can handle high voltage applications, while its low RDS(ON) helps the system maintain high efficiency, reduce energy loss, and ensure efficient charging and discharging of the battery. Such applications are common in battery packs and energy storage systems to optimize battery life and improve overall system performance.
**6. High-frequency power conversion: **
The low on-resistance and high withstand voltage of TSA20N50M-VB make it very suitable for high-frequency switching power supply fields. High-frequency power converters require MOSFETs to have high-speed switching capabilities and the ability to effectively carry high voltages and currents. TSA20N50M-VB can provide stable switching characteristics in these applications and improve the conversion efficiency of the system. It is commonly used in communication base stations, power transmission, household appliances and other fields.
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