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TSA10N80M-VB Product details
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Product Introduction
**TSA10N80M-VB** is a high voltage tolerance, low power consumption **N-Channel MOSFET**, using **TO247** package, based on advanced **SJ_Multi-EPI** technology. **VDS (drain-source voltage)** of this model is as high as **800V**, suitable for power management of high voltage applications. **Its **VGS (gate-source voltage)** range is **±30V**, and has **efficient conduction performance**, its **RDS(ON) (on-resistance)** is **500mΩ**, which can provide higher conduction efficiency at lower gate voltage.
**This MOSFET has **ID (maximum drain current)** of **11A**, which is very suitable for applications requiring high voltage and high current carrying, such as **power conversion, switching power supply**, etc. Its **Vth (gate threshold voltage)** is **3.5V**, which ensures rapid conduction at a lower gate voltage, and is suitable for applications with high switching speed requirements. It has excellent overall performance, can withstand high voltages, and provides low power loss, especially in power supplies and high-power devices.
**TSA10N80M-VB** is a high voltage tolerance, low power consumption **N-Channel MOSFET**, using **TO247** package, based on advanced **SJ_Multi-EPI** technology. **VDS (drain-source voltage)** of this model is as high as **800V**, suitable for power management of high voltage applications. **Its **VGS (gate-source voltage)** range is **±30V**, and has **efficient conduction performance**, its **RDS(ON) (on-resistance)** is **500mΩ**, which can provide higher conduction efficiency at lower gate voltage.
**This MOSFET has **ID (maximum drain current)** of **11A**, which is very suitable for applications requiring high voltage and high current carrying, such as **power conversion, switching power supply**, etc. Its **Vth (gate threshold voltage)** is **3.5V**, which ensures rapid conduction at a lower gate voltage, and is suitable for applications with high switching speed requirements. It has excellent overall performance, can withstand high voltages, and provides low power loss, especially in power supplies and high-power devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- @ VGS = 10V: 500mΩ
- **ID (maximum drain current)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Power dissipation**: Maximum power dissipation is 75W (depending on heat dissipation conditions)
- **Switching speed**: Supports high-frequency switching and optimizes power efficiency.
- **Operating temperature range**: -55°C to +150°C
- **Drain-source voltage (VDS)**: Suitable for high voltage circuits
- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**:
- @ VGS = 10V: 500mΩ
- **ID (maximum drain current)**: 11A
- **Technology**: SJ_Multi-EPI technology
- **Power dissipation**: Maximum power dissipation is 75W (depending on heat dissipation conditions)
- **Switching speed**: Supports high-frequency switching and optimizes power efficiency.
- **Operating temperature range**: -55°C to +150°C
- **Drain-source voltage (VDS)**: Suitable for high voltage circuits
Domain and module applications：
Applications and modules
1. **High voltage power converter**:
**TSA10N80M-VB** is very suitable for **high voltage power converter**, especially **AC-DC converter** and **DC-DC converter**. In **power electronic equipment**, it can provide stable current and voltage to ensure **efficient power conversion**. It is especially suitable for industrial power supplies, transformers and high voltage power drive systems that need to withstand voltages above 800V.
2. **Inverter**:
As a high voltage MOSFET, TSA10N80M-VB is suitable for **inverters**, especially for renewable energy systems such as **solar inverter** and **wind power inverter**. Due to its high **VDS**, it can switch efficiently at higher voltages, reduce power losses, provide efficient conversion capabilities, and ensure high efficiency of energy conversion.
3. **Industrial Power Control**:
In **Industrial Power Control Systems**, the TSA10N80M-VB can be used in **Switching Power Supplies**, **Motor Drive Systems**, and **Power Electronic Modules**. Its high **VDS** and **low on-resistance** enable it to excel in high-power and high-voltage environments, helping to improve the efficiency and reliability of industrial automation equipment. Common applications include **Industrial Motor Drives**, **Power Conditioning Systems**, and **High-Power Power Modules**.
4. **Power Transformers and Power Supply Systems**:
In **Power Transformers** and **Power Supply Systems**, the TSA10N80M-VB is able to handle current switching at higher voltages, ensuring efficient power conversion and reducing unnecessary power losses in the system. Especially in **High Voltage Power Transformers** and **Power Supply Equipment**, it can work effectively in high voltage environments and reduce heat generation, improving equipment reliability.
5. **Electric Vehicle (EV) Charging System**:
**TSA10N80M-VB**'s high **VDS** characteristics make it also widely used in **EV charging systems**. In these systems, MOSFETs are used to manage and regulate the current flow during the charging process, ensuring efficient and safe transmission of power to the EV battery. Its **800V** high voltage tolerance adapts it to the high voltage requirements of charging piles and fast charging systems.
6. **High-frequency power supply system**:
**TSA10N80M-VB** can also play an important role in **high-frequency power supply systems** (such as **RF power supply**). Its high-speed switching characteristics and **low on-resistance** ensure efficient power conversion under high-frequency conditions. It is widely used in power management of **RF amplifiers, radar systems** and **communication base stations**, providing efficient and stable power support.
7. **High-power electronic devices**:
In **high-power electronic devices**, TSA10N80M-VB can be used in **power amplifiers, electronic regulators** and other systems to handle **high voltage, high power** current switching and ensure the stable operation and high efficiency of the system. Such equipment is widely used in **broadcast power amplifiers** and **high-voltage power supply systems**.
1. **High voltage power converter**:
**TSA10N80M-VB** is very suitable for **high voltage power converter**, especially **AC-DC converter** and **DC-DC converter**. In **power electronic equipment**, it can provide stable current and voltage to ensure **efficient power conversion**. It is especially suitable for industrial power supplies, transformers and high voltage power drive systems that need to withstand voltages above 800V.
2. **Inverter**:
As a high voltage MOSFET, TSA10N80M-VB is suitable for **inverters**, especially for renewable energy systems such as **solar inverter** and **wind power inverter**. Due to its high **VDS**, it can switch efficiently at higher voltages, reduce power losses, provide efficient conversion capabilities, and ensure high efficiency of energy conversion.
3. **Industrial Power Control**:
In **Industrial Power Control Systems**, the TSA10N80M-VB can be used in **Switching Power Supplies**, **Motor Drive Systems**, and **Power Electronic Modules**. Its high **VDS** and **low on-resistance** enable it to excel in high-power and high-voltage environments, helping to improve the efficiency and reliability of industrial automation equipment. Common applications include **Industrial Motor Drives**, **Power Conditioning Systems**, and **High-Power Power Modules**.
4. **Power Transformers and Power Supply Systems**:
In **Power Transformers** and **Power Supply Systems**, the TSA10N80M-VB is able to handle current switching at higher voltages, ensuring efficient power conversion and reducing unnecessary power losses in the system. Especially in **High Voltage Power Transformers** and **Power Supply Equipment**, it can work effectively in high voltage environments and reduce heat generation, improving equipment reliability.
5. **Electric Vehicle (EV) Charging System**:
**TSA10N80M-VB**'s high **VDS** characteristics make it also widely used in **EV charging systems**. In these systems, MOSFETs are used to manage and regulate the current flow during the charging process, ensuring efficient and safe transmission of power to the EV battery. Its **800V** high voltage tolerance adapts it to the high voltage requirements of charging piles and fast charging systems.
6. **High-frequency power supply system**:
**TSA10N80M-VB** can also play an important role in **high-frequency power supply systems** (such as **RF power supply**). Its high-speed switching characteristics and **low on-resistance** ensure efficient power conversion under high-frequency conditions. It is widely used in power management of **RF amplifiers, radar systems** and **communication base stations**, providing efficient and stable power support.
7. **High-power electronic devices**:
In **high-power electronic devices**, TSA10N80M-VB can be used in **power amplifiers, electronic regulators** and other systems to handle **high voltage, high power** current switching and ensure the stable operation and high efficiency of the system. Such equipment is widely used in **broadcast power amplifiers** and **high-voltage power supply systems**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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