Product introduction:
TPC8212-H-VB MOSFET Product Introduction
TPC8212-H-VB is a dual N-channel MOSFET in SOP8 package, designed for low voltage and high-efficiency applications. This MOSFET contains two N-channel structures and is suitable for a variety of power management and power regulation applications. The maximum drain-source voltage (VDS) of TPC8212-H-VB is 30V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 1.7V. Its on-resistance (RDS(ON)) is 26mΩ (@VGS=4.5V) and 22mΩ (@VGS=10V), with low conduction loss, suitable for high-efficiency power switching applications. Its maximum drain current (ID) is 6.8A and 6.0A respectively, suitable for carrying large load currents and ensuring efficient current transmission.
TPC8212-H-VB is manufactured using Trench technology and has excellent current transfer capability and low on-resistance. It is suitable for applications such as high-efficiency power management, current regulation and switching power supplies, especially for power conversion and load management circuits that require dual MOSFET configurations.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
30V |
|
1.7V |
6.8/6.0A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
TPC8212-H-VB MOSFET Detailed Parameter Description
| **Parameter** | **Specification** |
|-----------------------|-------------------------------------|
| **Model** | TPC8212-H-VB |
| **Package** | SOP8 |
| **Configuration** | Dual N-channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 26mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 22mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 6.8A / 6.0A |
| **Technology** | Trench Technology|
Domain and module applications:
TPC8212-H-VB MOSFET application areas and module examples
**1. Power management and switching power supply: **
TPC8212-H-VB is suitable for efficient power management systems, especially in switching power supplies that require dual N-channel MOSFET configurations. Due to its low on-resistance (RDS(ON)), this MOSFET can provide efficient current transmission and reduce energy loss, making it very suitable for DC-DC converters, power regulation circuits, etc. It can effectively improve power conversion efficiency and ensure stable power output, and is widely used in consumer electronics, communication equipment, and industrial power systems.
**2. Battery Management System (BMS): **
TPC8212-H-VB also has important applications in battery management systems, especially in the charging and discharging process of high-power battery packs. Its dual N-channel structure can be used as a switching device for battery charging and discharging paths, which helps to improve the efficiency and stability of the system. In electric vehicles, portable devices, and energy storage systems, the TPC8212-H-VB can effectively control the flow of current and prevent overload and overcurrent phenomena to ensure the healthy operation of the battery pack.
**3. Power tools and battery-driven devices: **
In power tools and battery-driven devices, the TPC8212-H-VB can be used to drive electric motors, regulate current, and protect circuits from high current shocks. The high current carrying capacity (6.8A / 6.0A) of this MOSFET enables it to withstand the large current generated by power tools during operation, ensuring the stability and efficiency of the equipment operation. Due to its low RDS(ON), it can also reduce heat loss in the equipment and extend its service life.
**4. Electric vehicles and hybrid electric vehicles (HEV): **
TPC8212-H-VB is also widely used in power electronic systems of electric vehicles (EV) and hybrid electric vehicles (HEV). Its dual N-channel structure can be used for motor control, energy recovery systems (such as regenerative braking), and battery charge and discharge management. Low on-resistance helps reduce energy loss and improve the overall efficiency of electric vehicle power systems, making it an ideal choice for high-efficiency electric vehicles.
**5. LED driver and lighting module: **
TPC8212-H-VB is suitable for LED driver circuits and intelligent lighting systems, especially in multi-way switch applications. Dual N-channel MOSFET can effectively control the current of multiple LEDs, ensure stable light output, and reduce system heat. With low on-resistance, it can reduce energy loss and improve the energy efficiency of lighting systems. It is suitable for applications such as high-brightness LED lighting, indoor and outdoor intelligent lighting, and advertising displays.
**6. Automation control and robotics technology: **
TPC8212-H-VB is also suitable for automation control and robotics systems, especially in electric actuators and control systems. Its dual N-channel configuration can effectively regulate multi-channel currents and control multiple loads. MOSFET has good dynamic response characteristics, can accurately control the current distribution in the robot drive system, and achieve precise motion control. It is widely used in industrial automation and intelligent manufacturing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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