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TN2404K-T1-E3-VB Product details

Product introduction:

Product Introduction
**TN2404K-T1-E3-VB** is a high-efficiency, low-power single N-channel MOSFET in a compact SOT23-3 package, designed for small and medium power applications. With a maximum drain-source voltage (VDS) of 200V and a maximum drain current (ID) of 0.6A, this MOSFET is suitable for applications such as low-voltage power management, switch control, and load switching. It uses **Trench** technology and has a low on-resistance (RDS(ON) = 1400mΩ @ VGS = 10V), providing stable current control even at lower voltages, and is widely used in miniaturized, high-efficiency designs of electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-N 200V 20(±V) 2.5V 0.6A 1400mΩ
Detailed parameter description
- **Package type**: SOT23-3
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 1400mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 0.6A
- **Technology type**: Trench technology

Domain and module applications:

Applications and module examples

1. **Power management system**
**TN2404K-T1-E3-VB**'s high VDS and low RDS(ON) characteristics make it ideal for switching power supply control in power management systems. In this application, MOSFET can be used as a switching control element to regulate the output current and voltage of the power supply. For example, in low-power electronic devices and portable battery-powered systems, the use of this MOSFET can effectively optimize the efficiency of the power supply, reduce energy loss, and improve battery life.

2. **Miniaturized battery management system**
Due to its compact SOT23-3 package and low drain current, **TN2404K-T1-E3-VB** is suitable for miniaturized battery management systems (BMS). It can control the current flow of the battery during charging and discharging, especially in small devices such as handheld devices, smartphones, wearable devices, etc., to help achieve efficient battery management and protection functions.

3. **Load Switch**
**TN2404K-T1-E3-VB** also performs well in low-voltage load switch applications. Its low RDS(ON) and high VDS capabilities make it suitable for a variety of low-power load switch applications, such as switch control of low-voltage circuits. It is often used in low-power consumer electronics, embedded systems, and power switches for portable battery-powered devices.

4. **Automotive Electronic Systems**
**TN2404K-T1-E3-VB** has a high drain-source voltage (200V), which enables it to be used in power management and protection circuits in automotive electronic systems, especially for current control and switching functions of low-voltage loads. It can be used in low-power electrical systems such as on-board electronic modules, battery management systems, vehicle power windows, and electric seats to provide efficient and stable current control.

5. **Sensor modules and embedded systems**
Due to its miniaturized package (SOT23-3) and high current switching capability, **TN2404K-T1-E3-VB** is suitable for power switching functions in sensor modules and embedded systems. In these applications, the high voltage capability and low on-resistance of the MOSFET help improve system reliability, reduce power consumption and extend the service life of the equipment.

6. **Power switching for small electronic devices**
This MOSFET is also very suitable for power switching control in small electronic devices. It can be used in smart home devices, sensor modules, wearable devices, and wireless communication devices for low power current applications. These applications typically require small, efficient, low-power switching elements to ensure the portability and long battery life of the product.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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