Product introduction：
TM3402N FN-VB MOSFET Product Introduction
**TM3402N FN-VB** is a **unipolar N-channel** MOSFET in **SOT23-3** package, suitable for a variety of low-voltage, high-efficiency electronic applications. The **maximum drain-source voltage** (VDS) of this MOSFET is **30V**, the **maximum drain current** (ID) is **6.5A**, it uses **Trench technology**, and has low **RDS(ON)** characteristics, which are **30mΩ** and **33mΩ** at different gate-source voltages (VGS). At **VGS = 10V**, the resistance is lower, which helps to reduce energy loss and improve switching efficiency. This MOSFET has a **threshold voltage** (Vth) of **1.7V**, which enables it to start working at a lower gate voltage and is widely used in low-power, high-frequency, and high-speed switching circuits.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
30V |
20（±V） |
1.7V |
6.5A |
|
|
30mΩ |
|
TM3402N FN-VB MOSFET detailed parameter description
- **Package**: SOT23-3
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **33mΩ** (at **VGS=4.5V**)
- **30mΩ** (at **VGS=10V**)
- **Maximum drain current (ID)**: 6.5A
- **Technology**: Trench technology
- **Power loss**: Low on-resistance makes it have lower power loss, suitable for high-efficiency applications.
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: Efficient switching performance, suitable for fast switching applications
- **Current carrying capacity**: Supports maximum current of 6.5A, suitable for a variety of low and medium power applications
Domain and module applications：
TM3402N FN-VB MOSFET Application Examples
1. **Power Management and DC-DC Converter**: TM3402N FN-VB can be used in **DC-DC converter**, especially for low-power, low-voltage power supply systems. Due to its low **RDS(ON)**, it can effectively reduce power loss during the conversion process and improve the energy efficiency of the system. In **battery-powered devices** (such as mobile devices, portable power supplies), its high efficiency can extend the use time of the device.
2. **Load Switch Control**: In **load switch control circuit**, TM3402N FN-VB can be used to quickly switch load switches, especially in applications that require precise control of current. It is suitable for **home appliances** and **sensor circuits**, which can effectively control current and reduce power loss in the system.
3. **Load regulation circuit**: In some **power tools** or **small motor drive circuit**, using this MOSFET as a load regulation element can effectively control the current flow, reduce the power loss during motor startup and operation, and improve the overall efficiency. Its low on-resistance characteristic enables it to maintain low heat generation even under higher loads, avoiding overheating of the equipment.
4. **Switching power supply (SMPS)**: TM3402N FN-VB can be widely used in **switching power supply** (SMPS) design as an efficient switching element, especially in **high-frequency switching mode**. It can operate with low switching losses and ensure stable voltage output, suitable for high-efficiency devices such as small power adapters and wireless chargers.
5. **Low-power sensor circuit**: In **low-power sensors** and **wireless sensor networks**, TM3402N FN-VB can be used as a switching element to help control the power switch and provide efficient current transmission. Its **low RDS(ON)** and high-frequency switching characteristics make it ideal for low-power sensor devices such as environmental monitoring sensors and smart home devices.
6. **Signal processing circuits**: Since this MOSFET has a low threshold voltage (**Vth = 1.7V**), it is also suitable for use in **low-voltage signal processing circuits**, especially in high-frequency applications that require precise and fast response. Its low power loss and high switching efficiency make it suitable for high-frequency signal processing modules such as wireless communications and signal amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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