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TK80S06K3L-VB Product details
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Product Introduction:
**TK80S06K3L-VB** is a high-performance N-Channel MOSFET in a TO252 package, designed for efficient power management and power switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 97A, making it suitable for high-current and medium-voltage power conversion and power control applications. Its threshold voltage (Vth) is 3V, which means it can start working with a lower gate-source voltage. The on-resistance (RDS(ON)) of the MOSFET is 12mΩ (at VGS=4.5V) and 4.5mΩ (at VGS=10V), respectively, showing excellent switching efficiency and low loss performance, especially suitable for systems that require efficient energy transmission. Using Trench technology, this MOSFET provides low on-resistance and high switching speed, and is an ideal choice for various power systems, drive circuits and power control modules.
**TK80S06K3L-VB** is a high-performance N-Channel MOSFET in a TO252 package, designed for efficient power management and power switching applications. This MOSFET has a drain-source voltage (VDS) of 60V and a maximum drain current (ID) of 97A, making it suitable for high-current and medium-voltage power conversion and power control applications. Its threshold voltage (Vth) is 3V, which means it can start working with a lower gate-source voltage. The on-resistance (RDS(ON)) of the MOSFET is 12mΩ (at VGS=4.5V) and 4.5mΩ (at VGS=10V), respectively, showing excellent switching efficiency and low loss performance, especially suitable for systems that require efficient energy transmission. Using Trench technology, this MOSFET provides low on-resistance and high switching speed, and is an ideal choice for various power systems, drive circuits and power control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | 4.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 3V | 97A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **ID (maximum drain current)**: 97A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on operating conditions and heat dissipation design
- **Operating temperature range**: -55°C to +150°C
- **Total leakage current**: Depends on VDS and VGS conditions
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 60V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON)**:
- 12mΩ @ VGS=4.5V
- 4.5mΩ @ VGS=10V
- **ID (maximum drain current)**: 97A
- **Technology**: Trench technology
- **Maximum power dissipation**: Depends on operating conditions and heat dissipation design
- **Operating temperature range**: -55°C to +150°C
- **Total leakage current**: Depends on VDS and VGS conditions
Domain and module applications：
Application fields and modules:
1. **Power conversion and power management system**:
TK80S06K3L-VB is widely used in high-efficiency power conversion and power management systems, especially in switch mode power supplies (SMPS), DC-DC converters and AC-DC power supplies. Its 60V withstand voltage and 97A high drain current make it have good application prospects in medium voltage power supply design. The low RDS(ON) characteristics of MOSFET can reduce energy loss and improve power efficiency.
2. **Electric drive system**:
In electric drive systems (such as power tools, electric vehicles, wind power generation systems, etc.), TK80S06K3L-VB can provide efficient current control and power regulation for motors. Due to its high current carrying capacity, it can effectively drive the motor, reduce power loss, and provide smooth and stable power output, especially suitable for electric drive systems that require high current and lower voltage.
3. **Battery Management System (BMS)**:
In electric vehicles (EV), battery energy storage systems (BESS) and other applications that require precise battery power management, the TK80S06K3L-VB can effectively control the battery charging and discharging process. Its low on-resistance and high current capability make it an ideal power switch element for battery management and protection circuits to ensure efficient and safe battery charging and discharging.
4. **LED Drive Circuit**:
TK80S06K3L-VB can provide precise current control in LED drive circuits to help achieve efficient power conversion and drive. Low RDS(ON) value means reduced energy loss and stable current output, which helps improve the light efficiency and reliability of LED lighting systems. Suitable for indoor and outdoor lighting, smart lighting systems and other high-power lighting applications.
5. **Industrial Automation and Power Control Systems**:
In industrial automation and power control systems, the TK80S06K3L-VB can be used as a power switching element to regulate and control power transmission in industrial equipment. Its high current carrying capacity and low switching losses make it widely applicable in inverters, motor controllers and other high-power applications, providing efficient and reliable power control, reducing system operating costs and energy consumption.
6. **Solar Inverter**:
In a solar inverter, the TK80S06K3L-VB can be used to convert direct current (DC) generated by solar cells into alternating current (AC). The high current capability and low on-resistance of this MOSFET make it very useful in solar power generation systems, especially for improving the efficiency of the inverter and the energy utilization of the system. By reducing switching losses, it helps to improve the overall efficiency of the solar system.
7. **Power Factor Correction (PFC) Circuit**:
TK80S06K3L-VB can also be used in power factor correction (PFC) circuits to help improve the power factor of the power system, reduce power loss, and optimize grid load. Due to its low RDS(ON) and excellent switching characteristics, it can provide efficient energy conversion in PFC circuits, improve power factor, and reduce grid pressure, especially suitable for power optimization in industrial and commercial applications.
1. **Power conversion and power management system**:
TK80S06K3L-VB is widely used in high-efficiency power conversion and power management systems, especially in switch mode power supplies (SMPS), DC-DC converters and AC-DC power supplies. Its 60V withstand voltage and 97A high drain current make it have good application prospects in medium voltage power supply design. The low RDS(ON) characteristics of MOSFET can reduce energy loss and improve power efficiency.
2. **Electric drive system**:
In electric drive systems (such as power tools, electric vehicles, wind power generation systems, etc.), TK80S06K3L-VB can provide efficient current control and power regulation for motors. Due to its high current carrying capacity, it can effectively drive the motor, reduce power loss, and provide smooth and stable power output, especially suitable for electric drive systems that require high current and lower voltage.
3. **Battery Management System (BMS)**:
In electric vehicles (EV), battery energy storage systems (BESS) and other applications that require precise battery power management, the TK80S06K3L-VB can effectively control the battery charging and discharging process. Its low on-resistance and high current capability make it an ideal power switch element for battery management and protection circuits to ensure efficient and safe battery charging and discharging.
4. **LED Drive Circuit**:
TK80S06K3L-VB can provide precise current control in LED drive circuits to help achieve efficient power conversion and drive. Low RDS(ON) value means reduced energy loss and stable current output, which helps improve the light efficiency and reliability of LED lighting systems. Suitable for indoor and outdoor lighting, smart lighting systems and other high-power lighting applications.
5. **Industrial Automation and Power Control Systems**:
In industrial automation and power control systems, the TK80S06K3L-VB can be used as a power switching element to regulate and control power transmission in industrial equipment. Its high current carrying capacity and low switching losses make it widely applicable in inverters, motor controllers and other high-power applications, providing efficient and reliable power control, reducing system operating costs and energy consumption.
6. **Solar Inverter**:
In a solar inverter, the TK80S06K3L-VB can be used to convert direct current (DC) generated by solar cells into alternating current (AC). The high current capability and low on-resistance of this MOSFET make it very useful in solar power generation systems, especially for improving the efficiency of the inverter and the energy utilization of the system. By reducing switching losses, it helps to improve the overall efficiency of the solar system.
7. **Power Factor Correction (PFC) Circuit**:
TK80S06K3L-VB can also be used in power factor correction (PFC) circuits to help improve the power factor of the power system, reduce power loss, and optimize grid load. Due to its low RDS(ON) and excellent switching characteristics, it can provide efficient energy conversion in PFC circuits, improve power factor, and reduce grid pressure, especially suitable for power optimization in industrial and commercial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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