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TK65S04N1L-VB Product details
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TK65S04N1L-VB MOSFET Product Introduction
**TK65S04N1L-VB** is a high-performance **unipolar N-channel** MOSFET in **TO252** package, designed for high-efficiency power management and power conversion applications. Its **VDS** is **40V**, suitable for low to medium voltage applications such as power supplies, battery management systems, and power tools. The **Vth** of this MOSFET is **2.5V**, which can be started at a lower gate-source voltage, with good switching characteristics and drive compatibility. Its **RDS(ON)** value is very low, **5mΩ** at **VGS=10V** and **6mΩ** at **VGS=4.5V**, which enables it to effectively reduce energy loss and heat generation when working under high current conditions and improve overall efficiency. In addition, the high drain current capability of **ID** of **85A** makes it suitable for applications with high power loads. This MOSFET adopts **Trench** technology, has extremely low on-resistance and excellent switching performance, and is an ideal switching device in modern power systems.
**TK65S04N1L-VB** is a high-performance **unipolar N-channel** MOSFET in **TO252** package, designed for high-efficiency power management and power conversion applications. Its **VDS** is **40V**, suitable for low to medium voltage applications such as power supplies, battery management systems, and power tools. The **Vth** of this MOSFET is **2.5V**, which can be started at a lower gate-source voltage, with good switching characteristics and drive compatibility. Its **RDS(ON)** value is very low, **5mΩ** at **VGS=10V** and **6mΩ** at **VGS=4.5V**, which enables it to effectively reduce energy loss and heat generation when working under high current conditions and improve overall efficiency. In addition, the high drain current capability of **ID** of **85A** makes it suitable for applications with high power loads. This MOSFET adopts **Trench** technology, has extremely low on-resistance and excellent switching performance, and is an ideal switching device in modern power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
TK65S04N1L-VB MOSFET Detailed parameter description
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: Very low switching loss and fast switching characteristics
- **Power loss**: Ultra-low on-resistance leads to extremely low power loss, suitable for high-performance applications
- **Thermal management**: Good thermal conductivity, suitable for high current working environment
- **Current carrying capacity**: 85A drain current carrying capacity, suitable for high current applications
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: Very low switching loss and fast switching characteristics
- **Power loss**: Ultra-low on-resistance leads to extremely low power loss, suitable for high-performance applications
- **Thermal management**: Good thermal conductivity, suitable for high current working environment
- **Current carrying capacity**: 85A drain current carrying capacity, suitable for high current applications
Domain and module applications：
TK65S04N1L-VB MOSFET Application Examples
1. **DC-DC Converter**: Due to its **5mΩ** (at **VGS=10V**) low on-resistance, TK65S04N1L-VB is particularly suitable for **DC-DC Converter**. It can effectively reduce energy loss and improve conversion efficiency, especially under high current conditions, providing stable voltage conversion, suitable for fields such as industrial power supply, consumer electronics and computer power supply.
2. **Battery Management System (BMS)**: In the battery management system, TK65S04N1L-VB can provide high-efficiency switch control, especially in high-current battery systems that require fast charging and discharging. Due to its **85A** high current capability and low on-resistance, it can ensure low power loss during battery charging and discharging, and improve the overall performance and stability of the battery management system.
3. **Power tool drive system**: In the power drive of power tools (such as electric drills, electric saws, etc.), TK65S04N1L-VB can effectively control the high current in the motor drive circuit, especially for power tools that require efficient and fast switching. This MOSFET provides fast switching, low energy loss and high power density to ensure stable operation of the tool under high load conditions.
4. **LED drive power supply**: In high-power LED drive power supply, the low on-resistance and high current carrying capacity of TK65S04N1L-VB enable it to efficiently drive LED arrays. MOSFET can ensure that when high current flows through the LED module, heat accumulation is reduced, stable current is provided, and the service life of the LED is extended and the light efficiency is improved.
5. **Electric vehicles (such as electric bicycles, scooters, etc.)**: TK65S04N1L-VB is very suitable for battery management and motor drive systems in electric vehicles. Its **85A** drain current carrying capacity and low on-resistance enable it to provide extremely efficient power transmission and management in devices such as electric bicycles and electric scooters, improving the overall power efficiency and battery life of the system.
6. **Wireless communication equipment**: In wireless communication equipment, such as base station power amplifiers, the TK65S04N1L-VB can provide efficient switching control to ensure stable signal transmission. During high-frequency, high-current signal amplification, this MOSFET reduces power loss through its low on-resistance and improves device performance.
1. **DC-DC Converter**: Due to its **5mΩ** (at **VGS=10V**) low on-resistance, TK65S04N1L-VB is particularly suitable for **DC-DC Converter**. It can effectively reduce energy loss and improve conversion efficiency, especially under high current conditions, providing stable voltage conversion, suitable for fields such as industrial power supply, consumer electronics and computer power supply.
2. **Battery Management System (BMS)**: In the battery management system, TK65S04N1L-VB can provide high-efficiency switch control, especially in high-current battery systems that require fast charging and discharging. Due to its **85A** high current capability and low on-resistance, it can ensure low power loss during battery charging and discharging, and improve the overall performance and stability of the battery management system.
3. **Power tool drive system**: In the power drive of power tools (such as electric drills, electric saws, etc.), TK65S04N1L-VB can effectively control the high current in the motor drive circuit, especially for power tools that require efficient and fast switching. This MOSFET provides fast switching, low energy loss and high power density to ensure stable operation of the tool under high load conditions.
4. **LED drive power supply**: In high-power LED drive power supply, the low on-resistance and high current carrying capacity of TK65S04N1L-VB enable it to efficiently drive LED arrays. MOSFET can ensure that when high current flows through the LED module, heat accumulation is reduced, stable current is provided, and the service life of the LED is extended and the light efficiency is improved.
5. **Electric vehicles (such as electric bicycles, scooters, etc.)**: TK65S04N1L-VB is very suitable for battery management and motor drive systems in electric vehicles. Its **85A** drain current carrying capacity and low on-resistance enable it to provide extremely efficient power transmission and management in devices such as electric bicycles and electric scooters, improving the overall power efficiency and battery life of the system.
6. **Wireless communication equipment**: In wireless communication equipment, such as base station power amplifiers, the TK65S04N1L-VB can provide efficient switching control to ensure stable signal transmission. During high-frequency, high-current signal amplification, this MOSFET reduces power loss through its low on-resistance and improves device performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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