TK50S04K3L-VB Product details
Product introduction:
TK50S04K3L-VB is a high-performance N-channel MOSFET in TO252 package with 40V drain-source withstand voltage (V_DS) and maximum drain current of 85A. This model has excellent low on-resistance characteristics, 6mΩ at V_GS=4.5V and 5mΩ at V_GS=10V, and can provide excellent efficiency in high current applications. Its threshold voltage (V_th) is 2.5V and the gate-source voltage range is ±20V. Using advanced Trench technology, TK50S04K3L-VB provides fast switching response, low power consumption and high efficiency, and is particularly suitable for high current, high frequency power management and power electronics systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter | Value |
|---------------------|-------------------------------|
| **Model** | TK50S04K3L-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source withstand voltage (V_DS)** | 40V |
| **Gate-source voltage (V_GS)** | ±20V |
| **Threshold voltage (V_th)** | 2.5V |
| **On-resistance (R_DS(ON))** | 6mΩ @ V_GS=4.5V |
| **On-resistance (R_DS(ON))** | 5mΩ @ V_GS=10V |
| **Maximum drain current (I_D)** | 85A |
| **Technology** | Trench |
Domain and module applications:
1. **High-efficiency power management**: TK50S04K3L-VB has very low on-resistance and high current carrying capacity, suitable for various power management systems, especially in DC-DC converters, AC-DC power adapters and LED driver power supplies. Due to the low R_DS(ON), this MOSFET can reduce power loss when high current flows, improve overall system efficiency, and is very suitable for high-efficiency power supply design.
2. **Electric vehicles and battery management systems (BMS)**: TK50S04K3L-VB's 85A maximum drain current and low on-resistance make it very suitable for battery management systems in electric vehicles (EV) and hybrid electric vehicles (HEV). It can be used for battery charging and discharging control, as well as battery protection modules (BMS) to ensure the safety and efficiency of the system during high-power and high-current operations.
3. **Industrial Power and Power Control**: In industrial power systems, such as renewable energy applications, solar inverters, power control units, etc., TK50S04K3L-VB is an ideal power switch element. Its high current carrying capacity and low on-resistance are very suitable for high-power and high-frequency industrial power applications, ensuring the stability and efficiency of the power conversion process.
4. **Motor Drive Control System**: Due to its high current carrying capacity and fast switching characteristics, TK50S04K3L-VB is also widely used in motor drive and control systems, especially for brushless DC motors (BLDC) and DC motor drive systems. It can respond quickly during the motor start and stop process, ensuring the efficient operation and stability of the drive system.
5. **Consumer Electronics**: In the field of consumer electronics, TK50S04K3L-VB can be used in high-performance battery-powered devices and portable chargers. It can reduce the energy loss during battery charging and discharging, provide longer battery life, and is suitable for power modules of high-performance mobile phones, laptops, power tools and other equipment.
Technical support:
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