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TK50P03M1-VB Product details
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Product Introduction: TK50P03M1-VB MOSFET
TK50P03M1-VB is a high-performance unipolar P-channel MOSFET in TO252 package, suitable for medium voltage and high current power management applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low-voltage and low-power applications. Its on-resistance (RDS(ON)) is 11mΩ at VGS = 10V and 13mΩ at VGS = 4.5V. It has very low switching losses and high efficiency, which is very suitable for high-current low-voltage control systems. The maximum drain current (ID) is -60A, which can meet the needs of high current and high efficiency. This MOSFET adopts Trench technology, which effectively reduces the on-resistance and optimizes the switching performance. It is suitable for a variety of applications such as power switches, motor control, inverters, etc.
TK50P03M1-VB is a high-performance unipolar P-channel MOSFET in TO252 package, suitable for medium voltage and high current power management applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, and the maximum gate-source voltage (VGS) is ±20V, which is suitable for low-voltage and low-power applications. Its on-resistance (RDS(ON)) is 11mΩ at VGS = 10V and 13mΩ at VGS = 4.5V. It has very low switching losses and high efficiency, which is very suitable for high-current low-voltage control systems. The maximum drain current (ID) is -60A, which can meet the needs of high current and high efficiency. This MOSFET adopts Trench technology, which effectively reduces the on-resistance and optimizes the switching performance. It is suitable for a variety of applications such as power switches, motor control, inverters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -30V | -2.5V | -60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (at VGS = 4.5V)
- 11mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -60A
- **Process technology**: Trench technology
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 13mΩ (at VGS = 4.5V)
- 11mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -60A
- **Process technology**: Trench technology
Domain and module applications：
Application areas and module examples:
1. **Power Management and Switching Power Supply**:
TK50P03M1-VB has a very low on-resistance (RDS(ON)), making it very suitable for applications such as switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits in power management systems. In these systems, MOSFET plays a key role in current switching, and its low loss characteristics can significantly improve overall system efficiency and reduce heat generation.
2. **Motor Drive and Control**:
TK50P03M1-VB is suitable for motor drive systems that require efficient current control. Due to its high drain current (-60A) and low on-resistance, it is very suitable for applications such as power tools, electric vehicle drive circuits, and industrial robots, ensuring that the motor can operate efficiently and stably while reducing power losses during current conversion.
3. **Inverter and Uninterruptible Power Supply (UPS)**:
In inverter and UPS systems, TK50P03M1-VB can be used as a switching device to control and convert current, which is particularly suitable for high-efficiency processing of low-voltage power. The high current capability and low on-resistance of MOSFET can help the inverter improve the efficiency of power conversion, especially in the process of reducing energy loss from DC to AC conversion.
4. **Automotive Electronics and Battery Management**:
TK50P03M1-VB MOSFET is suitable for battery management (BMS) and power conversion applications in automotive electronic systems, especially in battery systems of electric vehicles and hybrid vehicles. It can effectively control the charging and discharging process of the battery and optimize the efficiency and stability of the battery management system. The low on-resistance and high current carrying capacity of MOSFET can provide reliable performance in high-power applications.
5. **Smart Home and Consumer Electronics**:
This MOSFET can also be used in smart home devices and consumer electronics, especially battery-powered devices such as battery chargers, electric curtain controls, electric door drives, etc. TK50P03M1-VB provides efficient power conversion capabilities and is suitable for use in these applications that require low power consumption and high efficiency.
6. **High-efficiency Battery Charging and Charger Applications**:
Due to its low on-resistance and high current carrying capacity, TK50P03M1-VB is very suitable for use in battery chargers, especially in charging situations that require high current output, such as lithium battery charging and fast charging applications. Low on-resistance can reduce power loss, improve charging efficiency, and reduce heating problems caused by current load.
In short, the low on-resistance, high current carrying capability and high efficiency of the TK50P03M1-VB make it very suitable for use in power management, motor drive, automotive electronics, battery management and high-efficiency battery charging applications, which can significantly improve the efficiency and performance of the system.
1. **Power Management and Switching Power Supply**:
TK50P03M1-VB has a very low on-resistance (RDS(ON)), making it very suitable for applications such as switching power supplies (SMPS), DC-DC converters, and power factor correction (PFC) circuits in power management systems. In these systems, MOSFET plays a key role in current switching, and its low loss characteristics can significantly improve overall system efficiency and reduce heat generation.
2. **Motor Drive and Control**:
TK50P03M1-VB is suitable for motor drive systems that require efficient current control. Due to its high drain current (-60A) and low on-resistance, it is very suitable for applications such as power tools, electric vehicle drive circuits, and industrial robots, ensuring that the motor can operate efficiently and stably while reducing power losses during current conversion.
3. **Inverter and Uninterruptible Power Supply (UPS)**:
In inverter and UPS systems, TK50P03M1-VB can be used as a switching device to control and convert current, which is particularly suitable for high-efficiency processing of low-voltage power. The high current capability and low on-resistance of MOSFET can help the inverter improve the efficiency of power conversion, especially in the process of reducing energy loss from DC to AC conversion.
4. **Automotive Electronics and Battery Management**:
TK50P03M1-VB MOSFET is suitable for battery management (BMS) and power conversion applications in automotive electronic systems, especially in battery systems of electric vehicles and hybrid vehicles. It can effectively control the charging and discharging process of the battery and optimize the efficiency and stability of the battery management system. The low on-resistance and high current carrying capacity of MOSFET can provide reliable performance in high-power applications.
5. **Smart Home and Consumer Electronics**:
This MOSFET can also be used in smart home devices and consumer electronics, especially battery-powered devices such as battery chargers, electric curtain controls, electric door drives, etc. TK50P03M1-VB provides efficient power conversion capabilities and is suitable for use in these applications that require low power consumption and high efficiency.
6. **High-efficiency Battery Charging and Charger Applications**:
Due to its low on-resistance and high current carrying capacity, TK50P03M1-VB is very suitable for use in battery chargers, especially in charging situations that require high current output, such as lithium battery charging and fast charging applications. Low on-resistance can reduce power loss, improve charging efficiency, and reduce heating problems caused by current load.
In short, the low on-resistance, high current carrying capability and high efficiency of the TK50P03M1-VB make it very suitable for use in power management, motor drive, automotive electronics, battery management and high-efficiency battery charging applications, which can significantly improve the efficiency and performance of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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