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TK4P55D-VB Product details
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Product Introduction:
**TK4P55D-VB** is a high-voltage N-Channel MOSFET in TO252 package, designed for high-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for high-voltage power management and power conversion applications. This MOSFET has a high threshold voltage (Vth) of 3.5V, provides reliable switching operation, and has a medium on-resistance (RDS(ON)) of 1000mΩ @ VGS=10V, which can effectively reduce energy loss and ensure the efficiency of system operation. This model adopts SJ_Multi-EPI technology, which optimizes the conduction performance and switching characteristics while ensuring high voltage resistance, making it suitable for high-frequency and high-voltage switching applications. Its scope of application covers multiple fields such as high-voltage power supply, industrial control, electric drive, etc., and can provide stable and reliable performance in environments requiring high voltage resistance and relatively low current.
**TK4P55D-VB** is a high-voltage N-Channel MOSFET in TO252 package, designed for high-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is 650V, suitable for high-voltage power management and power conversion applications. This MOSFET has a high threshold voltage (Vth) of 3.5V, provides reliable switching operation, and has a medium on-resistance (RDS(ON)) of 1000mΩ @ VGS=10V, which can effectively reduce energy loss and ensure the efficiency of system operation. This model adopts SJ_Multi-EPI technology, which optimizes the conduction performance and switching characteristics while ensuring high voltage resistance, making it suitable for high-frequency and high-voltage switching applications. Its scope of application covers multiple fields such as high-voltage power supply, industrial control, electric drive, etc., and can provide stable and reliable performance in environments requiring high voltage resistance and relatively low current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Switching performance**: Suitable for high-frequency switching operations
- **Maximum power dissipation**: The specific power dissipation capacity is based on actual working conditions, and the optimized thermal management ensures stable operation under high load conditions.
- **Package type**: TO252
- **Configuration**: Unipolar N-Channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 1000mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: SJ_Multi-EPI technology
- **Switching performance**: Suitable for high-frequency switching operations
- **Maximum power dissipation**: The specific power dissipation capacity is based on actual working conditions, and the optimized thermal management ensures stable operation under high load conditions.
Domain and module applications：
Application fields and modules:
1. **High-voltage power management**:
TK4P55D-VB is suitable for high-voltage power management systems, especially in DC conversion of AC power and power conversion modules of high-voltage DC power. The high drain-source voltage of 650V enables it to work stably under various voltage environments. At the same time, its low on-resistance helps to reduce power loss and improve conversion efficiency.
2. **Electric drive system**:
In the drive system of electric vehicles (EV) and industrial power tools, TK4P55D-VB can be used for motor drive, power regulation and battery management. The MOSFET has a high voltage tolerance, can handle higher voltage drive requirements, and provide stable current control, thereby ensuring efficient and safe operation of electric drive systems.
3. **Industrial power control**:
In industrial power control modules, TK4P55D-VB can be used as a switching element in power converters. Its high withstand voltage characteristics enable it to work effectively in high voltage input and output environments, and is widely used in industrial inverters, variable frequency drives, and power transmission systems to provide efficient power conversion and load regulation.
4. **Battery Management System (BMS)**:
In battery management systems, especially in high voltage battery packs (such as electric vehicle battery packs, energy storage systems), the TK4P55D-VB can effectively manage the current flow during battery charging and discharging. Its high voltage tolerance makes it suitable for scenarios such as battery pack protection, overcurrent protection, and power regulation.
5. **Solar Inverter**:
TK4P55D-VB can be used in inverter modules in solar power generation systems to convert direct current (DC) generated by solar panels into alternating current (AC). Its 650V drain-source voltage can meet the high voltage requirements of solar inverters, and the stability and switching performance of the MOSFET can improve overall energy efficiency and reduce power losses.
6. **Power Factor Correction (PFC) Circuit**:
In the Power Factor Correction (PFC) circuit, TK4P55D-VB can be used for efficient energy conversion and current control, helping to optimize the power factor of the power system and improve the overall efficiency of the power system. Its high voltage tolerance and excellent conduction performance make it very suitable for use in PFC circuits.
7. **Switch Mode Power Supply (SMPS)**:
In the Switch Mode Power Supply (SMPS), TK4P55D-VB can be used for power conversion at the high voltage input end, especially in modules for high voltage power supply and efficient current conversion. Its low on-resistance and high switching frequency characteristics make it very suitable for efficient power conversion, and it is widely used in power modules for computer power supplies, consumer electronics, and communication equipment.
1. **High-voltage power management**:
TK4P55D-VB is suitable for high-voltage power management systems, especially in DC conversion of AC power and power conversion modules of high-voltage DC power. The high drain-source voltage of 650V enables it to work stably under various voltage environments. At the same time, its low on-resistance helps to reduce power loss and improve conversion efficiency.
2. **Electric drive system**:
In the drive system of electric vehicles (EV) and industrial power tools, TK4P55D-VB can be used for motor drive, power regulation and battery management. The MOSFET has a high voltage tolerance, can handle higher voltage drive requirements, and provide stable current control, thereby ensuring efficient and safe operation of electric drive systems.
3. **Industrial power control**:
In industrial power control modules, TK4P55D-VB can be used as a switching element in power converters. Its high withstand voltage characteristics enable it to work effectively in high voltage input and output environments, and is widely used in industrial inverters, variable frequency drives, and power transmission systems to provide efficient power conversion and load regulation.
4. **Battery Management System (BMS)**:
In battery management systems, especially in high voltage battery packs (such as electric vehicle battery packs, energy storage systems), the TK4P55D-VB can effectively manage the current flow during battery charging and discharging. Its high voltage tolerance makes it suitable for scenarios such as battery pack protection, overcurrent protection, and power regulation.
5. **Solar Inverter**:
TK4P55D-VB can be used in inverter modules in solar power generation systems to convert direct current (DC) generated by solar panels into alternating current (AC). Its 650V drain-source voltage can meet the high voltage requirements of solar inverters, and the stability and switching performance of the MOSFET can improve overall energy efficiency and reduce power losses.
6. **Power Factor Correction (PFC) Circuit**:
In the Power Factor Correction (PFC) circuit, TK4P55D-VB can be used for efficient energy conversion and current control, helping to optimize the power factor of the power system and improve the overall efficiency of the power system. Its high voltage tolerance and excellent conduction performance make it very suitable for use in PFC circuits.
7. **Switch Mode Power Supply (SMPS)**:
In the Switch Mode Power Supply (SMPS), TK4P55D-VB can be used for power conversion at the high voltage input end, especially in modules for high voltage power supply and efficient current conversion. Its low on-resistance and high switching frequency characteristics make it very suitable for efficient power conversion, and it is widely used in power modules for computer power supplies, consumer electronics, and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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