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TK40A10K3-VB Product details
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TK40A10K3-VB MOSFET Product Introduction
TK40A10K3-VB is a unipolar N-channel MOSFET in TO220F package. It adopts advanced Trench technology, has low RDS(ON) and high current carrying capacity, and is suitable for high-efficiency power electronics applications. The maximum drain-source voltage of this MOSFET is 100V, the maximum gate-source voltage is ±20V, and has a threshold voltage (Vth) of 2.5V. When the gate voltage VGS = 10V, its RDS(ON) value is 9mΩ, which can effectively reduce conduction losses and improve system efficiency. Its maximum drain current is 90A, which is suitable for high-current, high-power density switching power supplies, motor drives, power amplifiers and other power conversion applications.
TK40A10K3-VB is a unipolar N-channel MOSFET in TO220F package. It adopts advanced Trench technology, has low RDS(ON) and high current carrying capacity, and is suitable for high-efficiency power electronics applications. The maximum drain-source voltage of this MOSFET is 100V, the maximum gate-source voltage is ±20V, and has a threshold voltage (Vth) of 2.5V. When the gate voltage VGS = 10V, its RDS(ON) value is 9mΩ, which can effectively reduce conduction losses and improve system efficiency. Its maximum drain current is 90A, which is suitable for high-current, high-power density switching power supplies, motor drives, power amplifiers and other power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 100V | 2.5V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
TK40A10K3-VB MOSFET Detailed parameter description
| **Parameter** | **Specification** |
|------------------|----------------------------------|
| **Model** | TK40A10K3-VB |
| **Package** | TO220F |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 100V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 90A |
| **Technology** | Trench |
| **Parameter** | **Specification** |
|------------------|----------------------------------|
| **Model** | TK40A10K3-VB |
| **Package** | TO220F |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 100V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 90A |
| **Technology** | Trench |
Domain and module applications：
TK40A10K3-VB MOSFET application areas and module examples
**1. Switching power supply and power conversion: **
- TK40A10K3-VB is suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. In these power modules, the low RDS(ON) of MOSFET can effectively reduce power loss and improve system efficiency. It performs well in applications that need to withstand high currents and higher voltages, and is particularly suitable for high-efficiency power supply designs, such as communication power supplies, industrial power supplies, and power conversion modules in consumer electronics.
**2. Motor drive applications: **
- TK40A10K3-VB is an ideal choice for motor drive systems, especially for DC motors (DC Motor) or stepper motor drives. Due to its high current carrying capacity, it can provide reliable current transmission during motor starting, acceleration, operation and braking, ensuring efficient operation of the motor, reducing heat and loss, and improving the overall efficiency of the system.
**3. Battery Management System (BMS): **
- In battery management systems, especially electric vehicles (EV) and energy storage systems, TK40A10K3-VB can be used for battery charge and discharge regulation. The high current carrying capacity and low conduction loss provided by MOSFET help achieve high-efficiency battery management and fast response during charging, effectively extending battery life.
**4. Power Amplifier: **
- TK40A10K3-VB is also widely used in power amplifier (PA) design, especially in radio frequency (RF) power amplifiers. The low RDS(ON) and high current handling capability of MOSFET make it suitable for power amplification in wireless communications, broadcasting and other high-frequency applications, providing higher efficiency and lower heat.
**5. High-power and high-frequency switching applications: **
- This MOSFET is suitable for high-frequency and high-current switching applications, such as power control and power protection circuits. Through its excellent switching characteristics, TK40A10K3-VB can provide stable current control under high load conditions to ensure system reliability and safety.
Through the above application examples, it can be seen that TK40A10K3-VB can play an important role in a variety of high-efficiency power electronics applications, especially in situations with high current and efficiency requirements.
**1. Switching power supply and power conversion: **
- TK40A10K3-VB is suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters. In these power modules, the low RDS(ON) of MOSFET can effectively reduce power loss and improve system efficiency. It performs well in applications that need to withstand high currents and higher voltages, and is particularly suitable for high-efficiency power supply designs, such as communication power supplies, industrial power supplies, and power conversion modules in consumer electronics.
**2. Motor drive applications: **
- TK40A10K3-VB is an ideal choice for motor drive systems, especially for DC motors (DC Motor) or stepper motor drives. Due to its high current carrying capacity, it can provide reliable current transmission during motor starting, acceleration, operation and braking, ensuring efficient operation of the motor, reducing heat and loss, and improving the overall efficiency of the system.
**3. Battery Management System (BMS): **
- In battery management systems, especially electric vehicles (EV) and energy storage systems, TK40A10K3-VB can be used for battery charge and discharge regulation. The high current carrying capacity and low conduction loss provided by MOSFET help achieve high-efficiency battery management and fast response during charging, effectively extending battery life.
**4. Power Amplifier: **
- TK40A10K3-VB is also widely used in power amplifier (PA) design, especially in radio frequency (RF) power amplifiers. The low RDS(ON) and high current handling capability of MOSFET make it suitable for power amplification in wireless communications, broadcasting and other high-frequency applications, providing higher efficiency and lower heat.
**5. High-power and high-frequency switching applications: **
- This MOSFET is suitable for high-frequency and high-current switching applications, such as power control and power protection circuits. Through its excellent switching characteristics, TK40A10K3-VB can provide stable current control under high load conditions to ensure system reliability and safety.
Through the above application examples, it can be seen that TK40A10K3-VB can play an important role in a variety of high-efficiency power electronics applications, especially in situations with high current and efficiency requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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