Product introduction:
TK34E10N1-VB MOSFET Product Introduction
TK34E10N1-VB is a unipolar N-channel MOSFET in TO220 package, suitable for high-efficiency power electronics applications. This MOSFET uses advanced Trench technology, with low RDS(ON) value and high current carrying capacity. Its maximum drain-source voltage (VDS) is 100V, and the maximum gate-source voltage (VGS) is ±20V. It has excellent conduction performance and low conduction loss, and is suitable for high-frequency, high-current power conversion, switching power supplies, power amplifiers, motor drives and other occasions.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
TK34E10N1-VB MOSFET Detailed Parameter Description
| **Parameter** | **Specification** |
|------------------|----------------------------------|
| **Model** | TK34E10N1-VB |
| **Package** | TO220 |
| **Configuration** | Unipolar N-channel|
| **Maximum drain-source voltage (VDS)** | 100V |
| **Maximum gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2.5V |
| **On-resistance (RDS(ON))** | 20mΩ @ VGS = 4.5V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 100A |
| **Technology** | Trench |
Domain and module applications:
TK34E10N1-VB MOSFET application areas and module examples
**1. Power management and conversion modules: **
- In switching power supplies (SMPS) and DC-DC converters, TK34E10N1-VB can provide stable power conversion. Due to its low RDS(ON) and high current carrying capacity, it can effectively reduce conduction losses and improve conversion efficiency. Due to its high VDS and low on-resistance, it is suitable for high-efficiency power modules, especially in application scenarios requiring high current and high efficiency.
**2. Motor drive: **
- In motor drive applications, TK34E10N1-VB is suitable for driving DC motors and stepper motors. It can efficiently handle large currents during motor starting, running and braking, providing fast response and efficient energy conversion. Especially in high-frequency switching mode, low RDS(ON) can effectively reduce heat generation.
**3. Power amplifiers: **
- TK34E10N1-VB can be used in RF (radio frequency) power amplifiers, especially in applications that require high power and high efficiency. MOSFETs offer low conduction losses and can withstand high voltages and currents, making them ideal for RF power amplifiers (such as radio transmission and reception systems).
**4. Battery management and energy storage systems: **
- In battery management systems (BMS), TK34E10N1-VB can help regulate the battery's charge and discharge process, especially in electric vehicles (EV) and renewable energy storage systems, where its high current carrying capacity helps ensure the safety and efficiency of the battery system.
**5. Fast switching and protection circuits: **
- Due to its low on-resistance and high current carrying capacity, TK34E10N1-VB is also very suitable for various protection circuits and high-frequency fast switching applications, such as short-circuit protection, current overload protection, etc., to ensure system stability and safety.
Through these application examples, it can be seen that the TK34E10N1-VB has a wide range of applicability, especially in power electronic equipment that requires high efficiency, low losses and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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