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TK30S06K3L-VB Product details
Back to previous pageProduct introduction：
**：
TK30S06K3L-VB is a high-performance single N-channel MOSFET in TO252 package with 60V drain-source voltage (VDS), suitable for high-efficiency power management and power conversion applications. This MOSFET adopts low on-resistance technology (Trench technology) and has ultra-low RDS(ON) values of 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, supporting currents up to 58A, suitable for applications requiring low power consumption and high efficiency.
2. **
TK30S06K3L-VB is a high-performance single N-channel MOSFET in TO252 package with 60V drain-source voltage (VDS), suitable for high-efficiency power management and power conversion applications. This MOSFET adopts low on-resistance technology (Trench technology) and has ultra-low RDS(ON) values of 13mΩ (VGS=4.5V) and 10mΩ (VGS=10V), respectively, supporting currents up to 58A, suitable for applications requiring low power consumption and high efficiency.
2. **
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 2.5V | 58A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**：
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ (VGS=4.5V), 10mΩ (VGS=10V)
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
3. **
- **Package**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 13mΩ (VGS=4.5V), 10mΩ (VGS=10V)
- **Maximum drain current (ID)**: 58A
- **Technology**: Trench technology
3. **
Domain and module applications：
Example**:
TK30S06K3L-VB is particularly suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters, and is widely used in power management systems, electric vehicle drive circuits, communication equipment, LED drive power supplies, etc. Its low on-resistance enables it to effectively reduce power loss in high-frequency switching, so it is also suitable for high-efficiency battery chargers and power adapters to improve overall energy efficiency and extend the service life of the equipment. In addition, its high current carrying capacity makes it perform well in the power supply systems of industrial automation and medical equipment.
TK30S06K3L-VB is particularly suitable for high-efficiency switching power supplies (SMPS) and DC-DC converters, and is widely used in power management systems, electric vehicle drive circuits, communication equipment, LED drive power supplies, etc. Its low on-resistance enables it to effectively reduce power loss in high-frequency switching, so it is also suitable for high-efficiency battery chargers and power adapters to improve overall energy efficiency and extend the service life of the equipment. In addition, its high current carrying capacity makes it perform well in the power supply systems of industrial automation and medical equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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