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TK20S04K3L-VB Product details
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Product Introduction: TK20S04K3L-VB MOSFET
**TK20S04K3L-VB** is a **single N-channel MOSFET** in **TO252** package, with a maximum drain-source voltage (VDS) of **40V** and a maximum drain current (ID) of **55A**, suitable for low-voltage, high-current switching applications. The device uses **Trench** technology and has **low on-resistance**, which enables it to perform well under high-frequency and high-current conditions. Its **on-resistance at **VGS = 10V** is **12mΩ**, which enables extremely low switching losses and high-efficiency operation.
The **threshold voltage (Vth)** of this MOSFET is **2.5V**, supporting a maximum **20V** gate-source voltage (VGS), showing excellent performance in a variety of power management and load switching applications. Due to its low on-resistance and high current carrying capability, the TK20S04K3L-VB is ideal for applications in **high-efficiency power systems, power management, motor control** and more.
**TK20S04K3L-VB** is a **single N-channel MOSFET** in **TO252** package, with a maximum drain-source voltage (VDS) of **40V** and a maximum drain current (ID) of **55A**, suitable for low-voltage, high-current switching applications. The device uses **Trench** technology and has **low on-resistance**, which enables it to perform well under high-frequency and high-current conditions. Its **on-resistance at **VGS = 10V** is **12mΩ**, which enables extremely low switching losses and high-efficiency operation.
The **threshold voltage (Vth)** of this MOSFET is **2.5V**, supporting a maximum **20V** gate-source voltage (VGS), showing excellent performance in a variety of power management and load switching applications. Due to its low on-resistance and high current carrying capability, the TK20S04K3L-VB is ideal for applications in **high-efficiency power systems, power management, motor control** and more.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package type**: TO252
- **Channel type**: Single N channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **12mΩ** @ VGS = 10V
- **14mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench
- **Maximum power dissipation**: Calculated according to the thermal design of the actual application
- **Operating temperature range**: -55°C to 150°C
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: With low on-resistance and fast switching performance, it is suitable for high-frequency and high-efficiency power conversion.
- **Package type**: TO252
- **Channel type**: Single N channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **12mΩ** @ VGS = 10V
- **14mΩ** @ VGS = 4.5V
- **Maximum drain current (ID)**: 55A
- **Technology type**: Trench
- **Maximum power dissipation**: Calculated according to the thermal design of the actual application
- **Operating temperature range**: -55°C to 150°C
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: With low on-resistance and fast switching performance, it is suitable for high-frequency and high-efficiency power conversion.
Domain and module applications：
Application fields and module examples:
TK20S04K3L-VB MOSFET is widely used in many fields and modules due to its low voltage, high current and efficient switching characteristics. The following are some typical applications:
1. **Power management system**:
- In **high-efficiency power systems**, TK20S04K3L-VB MOSFET is suitable for power conversion applications such as **DC-DC converters** and **AC-DC converters**. Its low on-resistance characteristics can greatly reduce power losses, especially suitable for **battery-powered devices** and **low-power power management systems**, improving efficiency and extending equipment life.
2. **Motor drive control**:
- In **motor control systems**, TK20S04K3L-VB is an ideal choice for driving **motor** or **stepper motor**. It can provide high current carrying capacity and low switching loss, suitable for **home appliance motor control, fan drive, power tool control and other applications**. Especially in applications that require high-frequency switching, it can effectively reduce power loss.
3. **Load Switch and Power Switching**:
- In **load switching and power switching** systems, TK20S04K3L-VB MOSFET can be used as a fast switching switch, commonly used in **battery management system (BMS)** and **overcurrent protection**. Its low on-resistance enables it to withstand large load currents without generating excessive heat, ensuring efficient and stable operation of the system.
4. **LED Driver Power Supply**:
- Due to its high switching speed and low power consumption characteristics, TK20S04K3L-VB is suitable for use in **LED driver power supplies**, especially those that require low voltage and high current. The high current capability of MOSFET enables it to provide efficient and stable performance in applications such as **LED lighting control, induction lamp driver** and **power regulation**.
5. **Mobile Devices and Portable Electronic Devices**:
- TK20S04K3L-VB MOSFET is suitable for battery-powered systems in **mobile devices, laptops, and portable electronic devices**. Its low on-resistance can improve **battery efficiency**, extend battery life, and maintain low temperature rise under high load conditions.
6. **Consumer Electronics and Home Appliances**:
- In **consumer electronics** and **home appliances**, TK20S04K3L-VB is widely used for **power management** and **motor drive**. It can operate at lower voltages and remain stable under high current loads, making it suitable for **power and drive systems** for home appliances such as TVs, air conditioners, and refrigerators.
7. **Automotive Power Electronics**:
- In **automotive electronic systems**, the TK20S04K3L-VB MOSFET is suitable for **battery management systems (BMS)** in **electric vehicles (EVs)**, as well as **electric drive systems**. Due to its high current carrying capability and fast switching characteristics, it can support efficient energy conversion and management in automotive power electronic systems.
TK20S04K3L-VB MOSFET is widely used in many fields and modules due to its low voltage, high current and efficient switching characteristics. The following are some typical applications:
1. **Power management system**:
- In **high-efficiency power systems**, TK20S04K3L-VB MOSFET is suitable for power conversion applications such as **DC-DC converters** and **AC-DC converters**. Its low on-resistance characteristics can greatly reduce power losses, especially suitable for **battery-powered devices** and **low-power power management systems**, improving efficiency and extending equipment life.
2. **Motor drive control**:
- In **motor control systems**, TK20S04K3L-VB is an ideal choice for driving **motor** or **stepper motor**. It can provide high current carrying capacity and low switching loss, suitable for **home appliance motor control, fan drive, power tool control and other applications**. Especially in applications that require high-frequency switching, it can effectively reduce power loss.
3. **Load Switch and Power Switching**:
- In **load switching and power switching** systems, TK20S04K3L-VB MOSFET can be used as a fast switching switch, commonly used in **battery management system (BMS)** and **overcurrent protection**. Its low on-resistance enables it to withstand large load currents without generating excessive heat, ensuring efficient and stable operation of the system.
4. **LED Driver Power Supply**:
- Due to its high switching speed and low power consumption characteristics, TK20S04K3L-VB is suitable for use in **LED driver power supplies**, especially those that require low voltage and high current. The high current capability of MOSFET enables it to provide efficient and stable performance in applications such as **LED lighting control, induction lamp driver** and **power regulation**.
5. **Mobile Devices and Portable Electronic Devices**:
- TK20S04K3L-VB MOSFET is suitable for battery-powered systems in **mobile devices, laptops, and portable electronic devices**. Its low on-resistance can improve **battery efficiency**, extend battery life, and maintain low temperature rise under high load conditions.
6. **Consumer Electronics and Home Appliances**:
- In **consumer electronics** and **home appliances**, TK20S04K3L-VB is widely used for **power management** and **motor drive**. It can operate at lower voltages and remain stable under high current loads, making it suitable for **power and drive systems** for home appliances such as TVs, air conditioners, and refrigerators.
7. **Automotive Power Electronics**:
- In **automotive electronic systems**, the TK20S04K3L-VB MOSFET is suitable for **battery management systems (BMS)** in **electric vehicles (EVs)**, as well as **electric drive systems**. Due to its high current carrying capability and fast switching characteristics, it can support efficient energy conversion and management in automotive power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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