Product introduction：
1. Product Introduction
**TK20D60T-VB** is a high-performance **N-Channel MOSFET** in **TO220** package, suitable for high voltage and high current applications. Its maximum drain voltage is **650V** and its maximum drain current is **20A**, which is suitable for scenarios that handle high power current and voltage. This MOSFET uses **SJ_Multi-EPI** technology and has a low **RDS(ON)** (160mΩ at VGS = 10V), which can significantly reduce switching losses and conduction losses, and provide high-efficiency power conversion and control. Its high withstand voltage and low on-resistance characteristics make it widely used in power management, industrial drives, inverters, electric vehicles and other fields.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: TO220
- **Configuration**: Unipolar N-channel
- **Maximum drain voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 20A
- **Maximum power consumption**: Power consumption is determined by actual working conditions and heat dissipation design. In general, design optimization is required based on load and heat dissipation requirements.
- **Technology type**: SJ_Multi-EPI technology, with lower on-resistance and higher withstand voltage capability.
- **Operating temperature range**: -55°C to +150°C, adapting to high temperature working conditions in harsh environments.
Domain and module applications：
3. Application fields and modules
**TK20D60T-VB**'s high withstand voltage (650V), high current (20A) and low on-resistance (160mΩ) make it particularly suitable for high-efficiency power conversion and high-power drive systems. The following are the main fields and modules that this product is suitable for:
# 1) **Switching Power Supply (SMPS)**
**TK20D60T-VB** can be widely used in high-efficiency switching power supply designs, such as AC-DC converters, DC-DC converters, and other power modules. Its high withstand voltage capability (650V) enables it to work stably in high-voltage power supply systems, while its low on-resistance characteristics help improve power conversion efficiency and reduce energy loss. It is suitable for industrial power supplies, communication power supplies, and power modules in consumer electronics.
# 6) **Power Amplifier**
**TK20D60T-VB** can be used in high power amplifiers (PA), especially in applications that require high withstand voltage and high current, such as wireless communications, broadcasting and TV signal amplifiers. This MOSFET can effectively withstand high voltages and currents, ensuring the stability and reliability of signal amplification.
# 7) **Power Electronic Converter**
In power electronic converters, **TK20D60T-VB** can be used as a switching element for applications such as DC voltage conversion and AC/DC conversion. Whether it is voltage rise or fall or signal modulation, this MOSFET can provide efficient power conversion, suitable for high power power modules and industrial electrical equipment.
Summary
**TK20D60T-VB** is a high-performance N-channel MOSFET with 650V drain voltage and 20A current carrying capacity, using **SJ_Multi-EPI** technology, suitable for multiple high-power applications such as switching power supplies, inverters, motor drives, battery management systems, etc. Its low on-resistance, excellent current handling capability and withstand voltage characteristics make it an ideal switching element in efficient power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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