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TK20A60T-VB Product details
Back to previous pageProduct introduction：
1. **TK20A60T-VB Product Introduction: **
TK20A60T-VB is a single N-channel MOSFET in a **TO220F** package, manufactured based on **SJ_Multi-EPI** technology, with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. Its on-resistance (RDS(ON)) is 160mΩ (at VGS = 10V), which makes it perform well in power conversion, switching power supplies and high-voltage applications, especially in environments that require high voltage and high current handling. The MOSFET's efficient switching characteristics, low conduction losses and good thermal management performance make it widely used in multiple industrial applications.
This MOSFET has excellent performance in applications such as power electronics, inverters, battery management systems (BMS), and high-efficiency power supplies, and can provide users with efficient and reliable energy conversion and current control solutions. It is widely used in various power control systems and motor drive systems.
TK20A60T-VB is a single N-channel MOSFET in a **TO220F** package, manufactured based on **SJ_Multi-EPI** technology, with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. Its on-resistance (RDS(ON)) is 160mΩ (at VGS = 10V), which makes it perform well in power conversion, switching power supplies and high-voltage applications, especially in environments that require high voltage and high current handling. The MOSFET's efficient switching characteristics, low conduction losses and good thermal management performance make it widely used in multiple industrial applications.
This MOSFET has excellent performance in applications such as power electronics, inverters, battery management systems (BMS), and high-efficiency power supplies, and can provide users with efficient and reliable energy conversion and current control solutions. It is widely used in various power control systems and motor drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **TK20A60T-VB Detailed parameter description: **
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 160mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power consumption (Ptot): ** 150W (Specific power can be adjusted according to different application environment and heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology: ** SJ_Multi-EPI technology
- **Gate charge (Qg): ** 80nC (typ.)
- **Reverse recovery time (trr): ** 50ns (typ.)
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 160mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power consumption (Ptot): ** 150W (Specific power can be adjusted according to different application environment and heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology: ** SJ_Multi-EPI technology
- **Gate charge (Qg): ** 80nC (typ.)
- **Reverse recovery time (trr): ** 50ns (typ.)
Domain and module applications：
3. **TK20A60T-VB Application Fields and Modules: **
# **1. Switching Power Supply (SMPS): **
TK20A60T-VB is suitable for switching power supply (SMPS), especially high voltage and high current power conversion system. The high drain-source voltage (650V) and low on-resistance (160mΩ) of MOSFET enable it to efficiently convert high power supply and reduce energy loss. During high-frequency switching, MOSFET can switch quickly, optimize energy transfer and reduce switching losses.
# **6. Power Factor Correction (PFC) Circuit: **
TK20A60T-VB can be used in power factor correction (PFC) circuit. PFC circuit is used to improve the efficiency of power supply system, reduce harmonics and reduce power loss. The low on-resistance and fast switching performance of MOSFET enable it to efficiently regulate current, thereby improving the power factor of power supply and reducing electromagnetic interference (EMI) in the system.
# **7. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV): **
In the power management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), TK20A60T-VB acts as a power switch device to control the charging and discharging process of the battery. The high voltage tolerance of MOSFET makes it very suitable for use in electric vehicle battery management and energy recovery systems, ensuring that the vehicle optimizes the battery usage efficiency, reduces energy consumption, and improves endurance during driving.
# **8. Power Battery Energy Storage System: **
TK20A60T-VB is also suitable for power energy storage systems (ESS), especially those energy storage applications that need to handle high voltages and high currents. In these systems, MOSFET is used for efficient storage and release of electrical energy, helping to optimize the energy storage process and ensure the stability and reliability of power supply.
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Summary:
TK20A60T-VB is a single N-channel MOSFET based on **SJ_Multi-EPI** technology, suitable for high voltage and high current applications, with a drain-source voltage of 650V and a maximum drain current of 20A, and a low on-resistance of 160mΩ (VGS=10V). Its main applications include switching power supplies, inverters, power tools, battery management systems, industrial inverters, PFC circuits, electric vehicles, and power storage systems. TK20A60T-VB provides efficient power conversion, high reliability performance, and long life, and can provide efficient energy management and current control in multiple fields.
# **1. Switching Power Supply (SMPS): **
TK20A60T-VB is suitable for switching power supply (SMPS), especially high voltage and high current power conversion system. The high drain-source voltage (650V) and low on-resistance (160mΩ) of MOSFET enable it to efficiently convert high power supply and reduce energy loss. During high-frequency switching, MOSFET can switch quickly, optimize energy transfer and reduce switching losses.
# **6. Power Factor Correction (PFC) Circuit: **
TK20A60T-VB can be used in power factor correction (PFC) circuit. PFC circuit is used to improve the efficiency of power supply system, reduce harmonics and reduce power loss. The low on-resistance and fast switching performance of MOSFET enable it to efficiently regulate current, thereby improving the power factor of power supply and reducing electromagnetic interference (EMI) in the system.
# **7. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV): **
In the power management systems of electric vehicles (EV) and hybrid electric vehicles (HEV), TK20A60T-VB acts as a power switch device to control the charging and discharging process of the battery. The high voltage tolerance of MOSFET makes it very suitable for use in electric vehicle battery management and energy recovery systems, ensuring that the vehicle optimizes the battery usage efficiency, reduces energy consumption, and improves endurance during driving.
# **8. Power Battery Energy Storage System: **
TK20A60T-VB is also suitable for power energy storage systems (ESS), especially those energy storage applications that need to handle high voltages and high currents. In these systems, MOSFET is used for efficient storage and release of electrical energy, helping to optimize the energy storage process and ensure the stability and reliability of power supply.
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Summary:
TK20A60T-VB is a single N-channel MOSFET based on **SJ_Multi-EPI** technology, suitable for high voltage and high current applications, with a drain-source voltage of 650V and a maximum drain current of 20A, and a low on-resistance of 160mΩ (VGS=10V). Its main applications include switching power supplies, inverters, power tools, battery management systems, industrial inverters, PFC circuits, electric vehicles, and power storage systems. TK20A60T-VB provides efficient power conversion, high reliability performance, and long life, and can provide efficient energy management and current control in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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