TK18A50DTA4-VB Product details
Product introduction:
**TK18A50DTA4-VB** is a high-performance single N-channel MOSFET in **TO220F** package, designed for high voltage and high current applications. With a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A, this product can meet the requirements of high voltage and high power. Its on-resistance is 160mΩ (@VGS=10V), which has low energy loss in high power conversion and power management. This MOSFET uses **SJ_Multi-EPI** technology, which improves the reliability and switching performance of the device, so that it can still maintain good working condition under high temperature and high voltage conditions. **TK18A50DTA4-VB** is suitable for electronic devices that require high voltage and high current, and is widely used in power management, inverters, motor drives and other industrial control systems.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: TK18A50DTA4-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 20A
- **Technology**: SJ_Multi-EPI
- **Maximum power dissipation**: 125W (depends on heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Package characteristics**: TO220F Package with excellent thermal performance, suitable for high power applications.
Domain and module applications:
1. **High-efficiency power conversion system**:
**TK18A50DTA4-VB** can be widely used in high-efficiency power conversion modules, such as DC-DC converters and AC-DC power modules. Due to its high voltage and high current carrying capacity, this MOSFET performs well in high-efficiency power conversion, can greatly improve system efficiency and reduce energy loss, and is particularly suitable for power management systems that require high power density and high conversion efficiency.
2. **Inverter application**:
This MOSFET is an ideal choice in inverter design, especially for systems such as solar inverters, electric vehicle inverters, and wind power inverters. Due to its high voltage withstand capability of 650V and low on-resistance, **TK18A50DTA4-VB** can operate stably in high current and high voltage working environments, ensuring that the inverter can achieve efficient and reliable operation during energy conversion.
3. **Motor drive systems**:
**TK18A50DTA4-VB** is suitable for motor drive systems, especially electric vehicles (EV) and industrial motor drive applications. Its high current carrying capacity (20A) and high voltage tolerance make it stable and efficient when starting and running high-power motors. The low RDS(ON) and fast switching characteristics of MOSFET effectively improve the system's operating efficiency and reduce heat generation.
4. **Power electronic equipment**:
Among various types of power electronic equipment, **TK18A50DTA4-VB** can be used as a high-voltage, high-current switching element in welding machines, power conditioners, power converters, etc. Its low on-resistance can reduce energy losses and improve overall efficiency, making it particularly suitable for power control, power conversion, and other occasions requiring efficient power regulation.
5. **Power Management and Distribution Systems**:
**TK18A50DTA4-VB** can be widely used in power management and distribution systems, especially large-scale battery management systems, UPS (Uninterruptible Power Supply), and communication base station power management systems. The high voltage and high current capabilities of MOSFET make it ideal for processing and distributing power, ensuring power stability and improving the reliability of the entire system.
6. **Automotive Power Systems**:
In automotive power systems, **TK18A50DTA4-VB** is suitable for battery management, power conversion, and electric drive systems, especially in electric vehicles (EV) and hybrid electric vehicles (HEV). Its high voltage and high current capabilities enable it to withstand the high requirements of battery charging and discharging, and can efficiently drive electric motors or convert electricity, optimizing the energy efficiency of the power system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image