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TK18A30D-VB Product details

Product introduction:

TK18A30D-VB MOSFET Product Introduction

TK18A30D-VB is a high-performance unipolar N-type MOSFET in TO220F package with excellent switching characteristics and low on-resistance (R_DS(ON)). The maximum drain-source voltage (V_DS) of this MOSFET is 500V and the maximum drain current (I_D) is 30A. The SJ_Multi-EPI technology is adopted, which enables the device to work stably in high-voltage environment, with high current carrying capacity and low conduction loss. Due to its low R_DS(ON) characteristics (140mΩ @ V_GS = 10V), TK18A30D-VB is particularly suitable for high-power applications such as efficient power management, inverters, motor drives and battery management systems.

The design of TK18A30D-VB focuses on providing high efficiency and high reliability, which is very suitable for the field of power electronics, including but not limited to power conversion, electric vehicle charging, photovoltaic systems and power factor correction (PFC) circuits. This MOSFET can ensure the system operates reliably under high voltage and high current conditions, greatly improving energy efficiency and circuit performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 500V 3.5V 30A 140mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 500V 3.5V 30A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
TK18A30D-VB MOSFET Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Unipolar N-type MOSFET (Single-N-Channel)
- **Drain-source voltage (V_DS)**: 500V
- **Gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**:
- 140mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 30A
- **Power loss**: Suitable for high power applications such as high current, wide-bandwidth power supplies and motor control systems
- **Technology**: SJ_Multi-EPI technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation (P_D)**: Maximum power dissipation is usually related to heat dissipation conditions and current, and the typical value is 75W
- **Storage temperature range**: -55°C to +150°C

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Domain and module applications:

Application fields and module examples

1. **Power conversion and switching power supply (SMPS)**
The 500V maximum drain-source voltage and low on-resistance of TK18A30D-VB make it very suitable for efficient switching power supply (SMPS). In power modules, MOSFET can provide high-speed switching performance and high current carrying capacity, and is widely used in industrial power supply, communication power supply, LED power supply, home appliance power supply and computer power supply.

2. **Inverters**
This MOSFET can be used in photovoltaic inverters, motor drive inverters, UPS power supply systems, etc. Since TK18A30D-VB can withstand a high voltage of 500V and a large current of 30A, it can stably and efficiently convert DC to AC, thereby improving power conversion efficiency and reducing energy loss. In photovoltaic power generation systems, MOSFET can realize the conversion of DC to AC to supply the grid.

3. **Motor Drive Systems (VFDs)**
The high current carrying capacity of the TK18A30D-VB makes it ideal for motor drive systems (VFDs). In industrial automation, elevators, air conditioners, washing machines and other equipment, this MOSFET can provide efficient motor drive and achieve precise speed and torque control. Especially in high-power drive applications, it can provide reliable power conversion and reduce heat loss.

4. **Battery Management System (BMS)**
In the battery management system, the TK18A30D-VB can be used to control battery charging and discharging. Its high voltage resistance and high current capability can effectively manage high-voltage battery packs, which are suitable for electric vehicles (EV) and energy storage systems, helping to improve battery safety and charging efficiency. Due to its low on-resistance, the TK18A30D-VB can reduce energy loss during charging and improve charging efficiency.

5. **Power Factor Correction (PFC) Circuit**
As a switching element in a power factor correction (PFC) circuit, the TK18A30D-VB can effectively improve the power factor of the power supply and reduce reactive power loss in the power grid. In high-efficiency power supplies, MOSFETs provide high-speed switching response, optimize power transmission and reduce interference, especially in high-power applications that require stable high current.

6. **Electric Vehicle (EV) Charger**
The TK18A30D-VB is suitable for electric vehicle (EV) chargers, especially fast charging systems. The high withstand voltage capability and low on-resistance of this MOSFET make it excellent in handling high current and high voltage charging processes, ensuring that the battery is fully charged quickly and efficiently, meeting the needs of various high-performance electric vehicles.

7. **High-power Home Appliance Power Module**
In high-power home appliances, such as air conditioners, refrigerators, and washing machines, the TK18A30D-VB can provide efficient power conversion in power modules. Due to its low on-resistance, this MOSFET can work efficiently in the power management module of home appliances, reducing energy loss and improving power conversion efficiency.

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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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