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TK16N60W-VB Product details
Back to previous pageProduct introduction：
1. **TK16N60W-VB Product Introduction: **
TK16N60W-VB is a single N-channel MOSFET in TO247 package, designed based on **SJ_Multi-EPI** technology, with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. Its on-resistance (RDS(ON)) is 160mΩ (at VGS = 10V), providing excellent performance for efficient power conversion and high-voltage applications. Due to the use of advanced semiconductor processes, this MOSFET has low conduction losses, excellent switching characteristics and good thermal management performance, and is suitable for use in high-voltage power supplies, inverters, battery management systems (BMS) and other industrial power control systems. TK16N60W-VB provides efficient energy conversion capabilities and longer system life, and is an indispensable core component in modern power electronic systems.
TK16N60W-VB is a single N-channel MOSFET in TO247 package, designed based on **SJ_Multi-EPI** technology, with a drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. Its on-resistance (RDS(ON)) is 160mΩ (at VGS = 10V), providing excellent performance for efficient power conversion and high-voltage applications. Due to the use of advanced semiconductor processes, this MOSFET has low conduction losses, excellent switching characteristics and good thermal management performance, and is suitable for use in high-voltage power supplies, inverters, battery management systems (BMS) and other industrial power control systems. TK16N60W-VB provides efficient energy conversion capabilities and longer system life, and is an indispensable core component in modern power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. **TK16N60W-VB Detailed parameter description: **
- **Package type: ** TO247
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 160mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power dissipation (Ptot): ** 150W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.2°C/W (source to junction)
- **Technology:** SJ_Multi-EPI technology
- **Gate charge (Qg):** 90nC (typ.)
- **Reverse recovery time (trr):** 60ns (typ.)
- **Package type: ** TO247
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 160mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power dissipation (Ptot): ** 150W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.2°C/W (source to junction)
- **Technology:** SJ_Multi-EPI technology
- **Gate charge (Qg):** 90nC (typ.)
- **Reverse recovery time (trr):** 60ns (typ.)
Domain and module applications：
3. **TK16N60W-VB Application Fields and Modules: **
# **1. High-voltage power supply system: **
TK16N60W-VB is suitable for high-voltage power supply systems, especially switch mode power supplies (SMPS) and DC-AC inverters. Its 650V drain-source voltage and low on-resistance enable it to effectively handle high voltage and high current applications while reducing energy loss and improving conversion efficiency. In power management systems, the efficient switching characteristics of MOSFET help reduce power consumption and heat generation of the power supply, ensuring the stability and reliability of the power conversion process.
# **6. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV): **
TK16N60W-VB is suitable for power control systems in electric vehicles (EV) and hybrid electric vehicles (HEV). As the core switching element in battery management and energy recovery systems, MOSFET provides efficient current conversion and regulation to ensure that electric vehicles optimize the battery charging and discharging process during driving. It helps improve the energy efficiency and performance of electric vehicles, extend battery life and enhance the driving experience.
# **7. Power Factor Correction (PFC) Circuit: **
In the power factor correction (PFC) circuit, TK16N60W-VB can be used as a power switching element to improve the power factor of the power system. The fast switching performance and low on-resistance of MOSFET enable it to provide efficient power regulation in the PFC circuit, reduce harmonic interference and improve the overall efficiency of the system. Such circuits are commonly found in applications such as power converters and UPS power supplies.
# **8. Other Industrial Power Control Modules: **
TK16N60W-VB is also widely used in other high-voltage power control modules, such as motor drives, load control and power conditioning systems. In these applications, MOSFET can provide precise switching control and high current carrying capacity, suitable for various industrial power control tasks that require high power conversion and current regulation.
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Summary:
TK16N60W-VB is a high-efficiency, low on-resistance single N-channel MOSFET in TO247 package, suitable for 650V voltage and maximum 20A current applications. It is widely used in high-voltage power systems, power tools, battery management systems, inverters, frequency converters, electric vehicles and other fields. With its high voltage tolerance, low power loss and fast switching performance, TK16N60W-VB has significant advantages in various high-voltage and high-current applications, which can improve system efficiency, reduce energy loss and extend the service life of the system.
# **1. High-voltage power supply system: **
TK16N60W-VB is suitable for high-voltage power supply systems, especially switch mode power supplies (SMPS) and DC-AC inverters. Its 650V drain-source voltage and low on-resistance enable it to effectively handle high voltage and high current applications while reducing energy loss and improving conversion efficiency. In power management systems, the efficient switching characteristics of MOSFET help reduce power consumption and heat generation of the power supply, ensuring the stability and reliability of the power conversion process.
# **6. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV): **
TK16N60W-VB is suitable for power control systems in electric vehicles (EV) and hybrid electric vehicles (HEV). As the core switching element in battery management and energy recovery systems, MOSFET provides efficient current conversion and regulation to ensure that electric vehicles optimize the battery charging and discharging process during driving. It helps improve the energy efficiency and performance of electric vehicles, extend battery life and enhance the driving experience.
# **7. Power Factor Correction (PFC) Circuit: **
In the power factor correction (PFC) circuit, TK16N60W-VB can be used as a power switching element to improve the power factor of the power system. The fast switching performance and low on-resistance of MOSFET enable it to provide efficient power regulation in the PFC circuit, reduce harmonic interference and improve the overall efficiency of the system. Such circuits are commonly found in applications such as power converters and UPS power supplies.
# **8. Other Industrial Power Control Modules: **
TK16N60W-VB is also widely used in other high-voltage power control modules, such as motor drives, load control and power conditioning systems. In these applications, MOSFET can provide precise switching control and high current carrying capacity, suitable for various industrial power control tasks that require high power conversion and current regulation.
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Summary:
TK16N60W-VB is a high-efficiency, low on-resistance single N-channel MOSFET in TO247 package, suitable for 650V voltage and maximum 20A current applications. It is widely used in high-voltage power systems, power tools, battery management systems, inverters, frequency converters, electric vehicles and other fields. With its high voltage tolerance, low power loss and fast switching performance, TK16N60W-VB has significant advantages in various high-voltage and high-current applications, which can improve system efficiency, reduce energy loss and extend the service life of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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