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TK16A55D-VB Product details
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1. Product Introduction
**TK16A55D-VB** is a high-performance N-channel MOSFET in a TO220F package, suitable for high-voltage and high-current power electronics applications. It has a maximum drain voltage (VDS) of 550V, can handle drain currents (ID) up to 18A, and has a low on-resistance (RDS(ON) = 260mΩ at VGS = 10V), making it an excellent performer in high-efficiency power supplies and switching circuits. This MOSFET uses advanced **Plannar** technology, has excellent switching performance and thermal stability, and is suitable for power management systems that require high voltage resistance, low loss, and high efficiency.
**TK16A55D-VB** is a high-performance N-channel MOSFET in a TO220F package, suitable for high-voltage and high-current power electronics applications. It has a maximum drain voltage (VDS) of 550V, can handle drain currents (ID) up to 18A, and has a low on-resistance (RDS(ON) = 260mΩ at VGS = 10V), making it an excellent performer in high-efficiency power supplies and switching circuits. This MOSFET uses advanced **Plannar** technology, has excellent switching performance and thermal stability, and is suitable for power management systems that require high voltage resistance, low loss, and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 18A
- **Maximum power consumption**: According to working conditions and heat dissipation requirements, it usually works in a high-efficiency state.
- **Technology type**: Plannar technology, providing lower on-resistance and stable thermal performance.
- **Operating temperature range**: -55°C to +150°C, suitable for various industrial environments.
- **Static output characteristics**:
- **Drain current**: Can handle currents up to 18A, suitable for higher power power electronic systems.
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 260mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: 18A
- **Maximum power consumption**: According to working conditions and heat dissipation requirements, it usually works in a high-efficiency state.
- **Technology type**: Plannar technology, providing lower on-resistance and stable thermal performance.
- **Operating temperature range**: -55°C to +150°C, suitable for various industrial environments.
- **Static output characteristics**:
- **Drain current**: Can handle currents up to 18A, suitable for higher power power electronic systems.
Domain and module applications：
3. Application fields and modules
**TK16A55D-VB** is a high-voltage, high-current N-channel MOSFET suitable for multiple fields and modules, especially in power electronics applications that require high efficiency, low loss and reliability.
# 1) **Switching Power Supply (SMPS)**
TK16A55D-VB is very suitable for high-efficiency switching power supplies (such as AC-DC converters, DC-DC converters). Its low on-resistance (260mΩ) and high drain voltage (550V) enable it to handle environments with higher voltage input and output, and has low conduction losses, which improves the overall efficiency of the power supply, especially in high-power power modules. For example, industrial power supplies, communication power supplies, and server power supplies.
# 6) **High-power power modules**
TK16A55D-VB can also be used in high-power power modules, especially in scenarios that require high voltage resistance and high current carrying capacity. Its low on-resistance and excellent switching performance make it an ideal choice for high-power power modules, which can improve energy efficiency and reduce heat loss. It is suitable for applications such as smart grids and data center power supplies.
Summary
**TK16A55D-VB** is a high-efficiency N-channel MOSFET with a high withstand voltage of 550V and a low on-resistance of 260mΩ. It is very suitable for use in switching power supplies, inverters, motor drives, LED drive power supplies, battery management systems and other fields. Its superior performance and efficient switching capability enable it to meet the needs of high-voltage and high-current systems, while improving energy efficiency and reducing losses, ensuring system reliability and stability.
**TK16A55D-VB** is a high-voltage, high-current N-channel MOSFET suitable for multiple fields and modules, especially in power electronics applications that require high efficiency, low loss and reliability.
# 1) **Switching Power Supply (SMPS)**
TK16A55D-VB is very suitable for high-efficiency switching power supplies (such as AC-DC converters, DC-DC converters). Its low on-resistance (260mΩ) and high drain voltage (550V) enable it to handle environments with higher voltage input and output, and has low conduction losses, which improves the overall efficiency of the power supply, especially in high-power power modules. For example, industrial power supplies, communication power supplies, and server power supplies.
# 6) **High-power power modules**
TK16A55D-VB can also be used in high-power power modules, especially in scenarios that require high voltage resistance and high current carrying capacity. Its low on-resistance and excellent switching performance make it an ideal choice for high-power power modules, which can improve energy efficiency and reduce heat loss. It is suitable for applications such as smart grids and data center power supplies.
Summary
**TK16A55D-VB** is a high-efficiency N-channel MOSFET with a high withstand voltage of 550V and a low on-resistance of 260mΩ. It is very suitable for use in switching power supplies, inverters, motor drives, LED drive power supplies, battery management systems and other fields. Its superior performance and efficient switching capability enable it to meet the needs of high-voltage and high-current systems, while improving energy efficiency and reducing losses, ensuring system reliability and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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