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TK15J50D-VB Product details
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1. **TK15J50D-VB Product Introduction: **
TK15J50D-VB is a single N-channel MOSFET in TO3P package, designed based on advanced **SJ_Multi-EPI** technology, suitable for high-voltage power management and power conversion applications. This MOSFET has a drain-source voltage (VDS) of 600V and can carry a maximum drain current (ID) of 15A. When the gate-source voltage (VGS) is 10V, the on-resistance (RDS(ON)) is 280mΩ, which can effectively reduce power loss and provide higher efficiency. The high reliability and excellent switching performance of TK15J50D-VB make it perform well in high-voltage applications, especially for systems requiring stability and high efficiency, such as power conversion, battery management systems, and industrial power applications.
TK15J50D-VB is a single N-channel MOSFET in TO3P package, designed based on advanced **SJ_Multi-EPI** technology, suitable for high-voltage power management and power conversion applications. This MOSFET has a drain-source voltage (VDS) of 600V and can carry a maximum drain current (ID) of 15A. When the gate-source voltage (VGS) is 10V, the on-resistance (RDS(ON)) is 280mΩ, which can effectively reduce power loss and provide higher efficiency. The high reliability and excellent switching performance of TK15J50D-VB make it perform well in high-voltage applications, especially for systems requiring stability and high efficiency, such as power conversion, battery management systems, and industrial power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | 280mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
2. **TK15J50D-VB Detailed parameter description: **
- **Package type: ** TO3P
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 600V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 280mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 15A
- **Maximum power dissipation (Ptot): ** 150W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.5°C/W (source to junction)
- **Technology:** SJ_Multi-EPI technology
- **Gate charge (Qg):** 55nC (typ.)
- **Reverse recovery time (trr):** 80ns (typ.)
- **Package type: ** TO3P
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 600V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): **
- 280mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 15A
- **Maximum power dissipation (Ptot): ** 150W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3.5°C/W (source to junction)
- **Technology:** SJ_Multi-EPI technology
- **Gate charge (Qg):** 55nC (typ.)
- **Reverse recovery time (trr):** 80ns (typ.)
Domain and module applications：
3. **TK15J50D-VB Application Fields and Modules: **
# **1. High-voltage power supply system: **
TK15J50D-VB is an efficient power switching element, widely used in high-voltage power supply systems, especially in applications that require stable voltage conversion. Its 600V drain-source voltage makes it suitable for medium-power power management, switching power supply (SMPS), and DC-AC inverter applications. In these high-voltage power supply systems, MOSFET can provide fast and precise switching control, thereby improving power conversion efficiency and reducing power loss.
# **6. Industrial power control system: **
TK15J50D-VB is suitable for various industrial power control applications, such as inverters, speed regulators, motor drive systems, etc. It can stably handle higher currents and voltages and provide precise power control. Its low on-resistance and excellent thermal characteristics can effectively reduce heat accumulation during high power conversion and ensure long-term stable operation of the system.
# **7. Inverter and Power Factor Correction (PFC) Circuits: **
In inverter and power factor correction (PFC) circuits, TK15J50D-VB can be used as an efficient switching element to help convert DC to AC and optimize the power factor. Its excellent switching performance and low on-resistance can ensure high efficiency during power conversion and reduce the heat generated by high power conversion, thereby improving the stability and life of the entire system.
# **8. High-frequency switching power supply: **
Due to the fast switching characteristics of TK15J50D-VB, it is also very suitable for high-frequency switching power supplies (such as RF frequency power modules). In these high-frequency applications, MOSFET can respond quickly to current changes, reduce energy loss in the power module, and ensure efficient and stable power output.
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Summary:
TK15J50D-VB is a high-efficiency, low on-resistance single N-channel MOSFET in TO3P package, suitable for 600V voltage and maximum 15A current applications. It is widely used in high-voltage power systems, power converters, battery management, power tools, electric vehicles and industrial power control. With its low power loss, efficient switching characteristics and excellent thermal management performance, TK15J50D-VB has significant advantages in high-voltage and high-current applications, especially for power conversion and control systems that require high efficiency and reliability.
# **1. High-voltage power supply system: **
TK15J50D-VB is an efficient power switching element, widely used in high-voltage power supply systems, especially in applications that require stable voltage conversion. Its 600V drain-source voltage makes it suitable for medium-power power management, switching power supply (SMPS), and DC-AC inverter applications. In these high-voltage power supply systems, MOSFET can provide fast and precise switching control, thereby improving power conversion efficiency and reducing power loss.
# **6. Industrial power control system: **
TK15J50D-VB is suitable for various industrial power control applications, such as inverters, speed regulators, motor drive systems, etc. It can stably handle higher currents and voltages and provide precise power control. Its low on-resistance and excellent thermal characteristics can effectively reduce heat accumulation during high power conversion and ensure long-term stable operation of the system.
# **7. Inverter and Power Factor Correction (PFC) Circuits: **
In inverter and power factor correction (PFC) circuits, TK15J50D-VB can be used as an efficient switching element to help convert DC to AC and optimize the power factor. Its excellent switching performance and low on-resistance can ensure high efficiency during power conversion and reduce the heat generated by high power conversion, thereby improving the stability and life of the entire system.
# **8. High-frequency switching power supply: **
Due to the fast switching characteristics of TK15J50D-VB, it is also very suitable for high-frequency switching power supplies (such as RF frequency power modules). In these high-frequency applications, MOSFET can respond quickly to current changes, reduce energy loss in the power module, and ensure efficient and stable power output.
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Summary:
TK15J50D-VB is a high-efficiency, low on-resistance single N-channel MOSFET in TO3P package, suitable for 600V voltage and maximum 15A current applications. It is widely used in high-voltage power systems, power converters, battery management, power tools, electric vehicles and industrial power control. With its low power loss, efficient switching characteristics and excellent thermal management performance, TK15J50D-VB has significant advantages in high-voltage and high-current applications, especially for power conversion and control systems that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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