中文
English
TK130F06K3-VB Product details
Back to previous pageProduct introduction：
1. **TK130F06K3-VB Product Introduction: **
TK130F06K3-VB is a single N-channel MOSFET in TO220F package. It adopts advanced Trench technology and has extremely low on-resistance (RDS(ON)) and drain-source voltage (VDS) up to 60V. When the gate-source voltage (VGS) is 10V, the on-resistance of this MOSFET is only 2.6mΩ, and it can carry a maximum drain current (ID) of up to 210A, making it perform well in high-current applications. With its excellent current carrying capacity and low on-resistance, TK130F06K3-VB is an ideal switching element in the fields of high-efficiency power management, electric vehicles, industrial power modules, DC-DC converters, etc. Its high reliability and excellent heat dissipation performance ensure stable operation under various high-load and high-frequency operating conditions.
TK130F06K3-VB is a single N-channel MOSFET in TO220F package. It adopts advanced Trench technology and has extremely low on-resistance (RDS(ON)) and drain-source voltage (VDS) up to 60V. When the gate-source voltage (VGS) is 10V, the on-resistance of this MOSFET is only 2.6mΩ, and it can carry a maximum drain current (ID) of up to 210A, making it perform well in high-current applications. With its excellent current carrying capacity and low on-resistance, TK130F06K3-VB is an ideal switching element in the fields of high-efficiency power management, electric vehicles, industrial power modules, DC-DC converters, etc. Its high reliability and excellent heat dissipation performance ensure stable operation under various high-load and high-frequency operating conditions.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | 2.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 3V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **TK130F06K3-VB Detailed parameter description: **
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): **
- 5mΩ @ VGS = 4.5V
- 2.6mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 210A
- **Maximum power dissipation (Ptot): ** 250W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology: ** Trench technology
- **Drive voltage requirement: ** VGS = 10V (typical)
- **Maximum gate charge (Qg): ** 180nC (typical)
- **Reverse recovery time (trr): ** 30ns (typical)
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 60V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 3V
- **On-resistance (RDS(ON)): **
- 5mΩ @ VGS = 4.5V
- 2.6mΩ @ VGS = 10V
- **Maximum leakage current (ID): ** 210A
- **Maximum power dissipation (Ptot): ** 250W (the specific power depends on the heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology: ** Trench technology
- **Drive voltage requirement: ** VGS = 10V (typical)
- **Maximum gate charge (Qg): ** 180nC (typical)
- **Reverse recovery time (trr): ** 30ns (typical)
Domain and module applications：
3. **TK130F06K3-VB Application Fields and Modules: **
# **1. High-efficiency power management system: **
TK130F06K3-VB is suitable for high-efficiency power management applications, especially in systems such as DC-DC converters and switching power supplies (SMPS). Due to its extremely low on-resistance and high current carrying capacity, this MOSFET can significantly reduce power losses and improve overall system efficiency. In power conversion, it provides higher efficiency and lower heat generation, and is suitable for high-efficiency power systems that require high voltage and high current conversion.
# **6. Power conversion system: **
TK130F06K3-VB can be used in high-efficiency power conversion systems such as regulated power supplies, power factor correction circuits (PFC) and speed regulators. It improves energy efficiency and reduces heat loss in these power conversion applications by providing low on-resistance and stable switching operation. In applications with frequent switching, this MOSFET ensures that there is no excessive heat or power waste when the current is switched.
# **7. Power management for communication equipment: **
In communication equipment, TK130F06K3-VB is used as a switching element in the power module. Whether in base station power supply, data center UPS system, or other communication power supply system, this MOSFET can effectively manage high current power conversion to ensure system stability and high efficiency. This MOSFET can respond quickly when the load changes and provide stable power support.
# **8. High-power laser system: **
TK130F06K3-VB is also suitable for power management of high-power laser systems and other high-power precision equipment. Its low on-resistance and high current carrying capacity enable it to provide stable current control under high load conditions, ensuring precise operation and high efficiency of the equipment.
Summary:
TK130F06K3-VB is an excellent single N-channel MOSFET in TO220F package for high voltage (60V) and high current (210A) applications. With its ultra-low on-resistance and high current carrying capability, it has wide applications in power management, electric vehicles, industrial power supplies, inverters, etc. This MOSFET optimizes system efficiency through efficient current switching and low power loss, and is particularly suitable for high voltage, high current and high frequency power conversion systems.
# **1. High-efficiency power management system: **
TK130F06K3-VB is suitable for high-efficiency power management applications, especially in systems such as DC-DC converters and switching power supplies (SMPS). Due to its extremely low on-resistance and high current carrying capacity, this MOSFET can significantly reduce power losses and improve overall system efficiency. In power conversion, it provides higher efficiency and lower heat generation, and is suitable for high-efficiency power systems that require high voltage and high current conversion.
# **6. Power conversion system: **
TK130F06K3-VB can be used in high-efficiency power conversion systems such as regulated power supplies, power factor correction circuits (PFC) and speed regulators. It improves energy efficiency and reduces heat loss in these power conversion applications by providing low on-resistance and stable switching operation. In applications with frequent switching, this MOSFET ensures that there is no excessive heat or power waste when the current is switched.
# **7. Power management for communication equipment: **
In communication equipment, TK130F06K3-VB is used as a switching element in the power module. Whether in base station power supply, data center UPS system, or other communication power supply system, this MOSFET can effectively manage high current power conversion to ensure system stability and high efficiency. This MOSFET can respond quickly when the load changes and provide stable power support.
# **8. High-power laser system: **
TK130F06K3-VB is also suitable for power management of high-power laser systems and other high-power precision equipment. Its low on-resistance and high current carrying capacity enable it to provide stable current control under high load conditions, ensuring precise operation and high efficiency of the equipment.
Summary:
TK130F06K3-VB is an excellent single N-channel MOSFET in TO220F package for high voltage (60V) and high current (210A) applications. With its ultra-low on-resistance and high current carrying capability, it has wide applications in power management, electric vehicles, industrial power supplies, inverters, etc. This MOSFET optimizes system efficiency through efficient current switching and low power loss, and is particularly suitable for high voltage, high current and high frequency power conversion systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
