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TK12A60D-VB Product details
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1. **TK12A60D-VB Product Introduction:**
TK12A60D-VB is a single N-channel MOSFET in TO220F package with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. This MOSFET adopts Plannar technology and has a low on-resistance (RDS(ON) = 320mΩ@VGS=10V), which is suitable for high-voltage and high-current power conversion applications. With its high voltage resistance and high load-carrying capacity, TK12A60D-VB is widely used in power electronics, industrial power supplies, DC-DC converters, inverters and other fields. This MOSFET design can effectively reduce power loss, improve the efficiency and reliability of the power system, and is particularly suitable for application scenarios that require high voltage protection and stable current control.
TK12A60D-VB is a single N-channel MOSFET in TO220F package with a maximum drain-source voltage (VDS) of 650V and a maximum drain current (ID) of 20A. This MOSFET adopts Plannar technology and has a low on-resistance (RDS(ON) = 320mΩ@VGS=10V), which is suitable for high-voltage and high-current power conversion applications. With its high voltage resistance and high load-carrying capacity, TK12A60D-VB is widely used in power electronics, industrial power supplies, DC-DC converters, inverters and other fields. This MOSFET design can effectively reduce power loss, improve the efficiency and reliability of the power system, and is particularly suitable for application scenarios that require high voltage protection and stable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | 320mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 20A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. **TK12A60D-VB Detailed parameter description: **
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 320mΩ@VGS=10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power dissipation (Ptot): ** 150W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology:** Plannar technology
- **Maximum drive voltage:** ±30V
- **Drive voltage requirement:** VGS=10V
- **Package type: ** TO220F
- **Configuration: ** Single N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **On-resistance (RDS(ON)): ** 320mΩ@VGS=10V
- **Maximum leakage current (ID): ** 20A
- **Maximum power dissipation (Ptot): ** 150W (depending on heat dissipation conditions)
- **Maximum junction temperature (Tj): ** 150°C
- **Operating temperature range: ** -55°C to +150°C
- **Thermal resistance (RthJC): ** 3°C/W (source to junction)
- **Technology:** Plannar technology
- **Maximum drive voltage:** ±30V
- **Drive voltage requirement:** VGS=10V
Domain and module applications：
3. **TK12A60D-VB Application Fields and Modules: **
# **1. High-efficiency power management system **
TK12A60D-VB is widely used in high-efficiency power management systems, especially in applications requiring high voltage (650V), such as switching power supplies (SMPS), power adapters, and industrial power systems. This MOSFET can effectively control high power flow, reduce losses, and improve conversion efficiency, and is suitable for high-voltage power conversion, energy storage and management systems.
# **6. Power electronic equipment **
TK12A60D-VB can also be used in other power electronic equipment, such as high-frequency power supplies, solid-state relays, and dimmers. These devices require efficient power switching elements to achieve precise power control, and TK12A60D-VB can provide stable performance in high voltage and high current environments.
# **7. Wind and solar power generation systems**
In wind and solar power generation systems, TK12A60D-VB is used in inverters, battery charge and discharge control, and power dispatching systems. Its high voltage tolerance and low on-resistance make it ideal for efficient energy conversion and improve the overall stability and reliability of the system. These systems rely on efficient MOSFETs to optimize energy conversion efficiency and reduce power loss.
# **8. Power conversion and control systems**
TK12A60D-VB can also be used in other power conversion and control systems, such as speed regulators, power factor correction circuits (PFC), and motor control systems. It helps achieve precise power management by controlling the switching of current, ensuring stable operation of motors and other loads while reducing power loss.
Summary:
TK12A60D-VB is a high-efficiency N-channel MOSFET, using TO220F package, with a maximum drain-source voltage of 650V and a maximum drain current of 20A. It uses Plannar technology to provide stable and reliable power control in high voltage and high current environments. Its low on-resistance and high withstand voltage make it suitable for power management, inverters, electric vehicles, industrial power supplies, switching power supplies and other fields, and is widely used in application scenarios that require high-efficiency current switching and high voltage protection.
# **1. High-efficiency power management system **
TK12A60D-VB is widely used in high-efficiency power management systems, especially in applications requiring high voltage (650V), such as switching power supplies (SMPS), power adapters, and industrial power systems. This MOSFET can effectively control high power flow, reduce losses, and improve conversion efficiency, and is suitable for high-voltage power conversion, energy storage and management systems.
# **6. Power electronic equipment **
TK12A60D-VB can also be used in other power electronic equipment, such as high-frequency power supplies, solid-state relays, and dimmers. These devices require efficient power switching elements to achieve precise power control, and TK12A60D-VB can provide stable performance in high voltage and high current environments.
# **7. Wind and solar power generation systems**
In wind and solar power generation systems, TK12A60D-VB is used in inverters, battery charge and discharge control, and power dispatching systems. Its high voltage tolerance and low on-resistance make it ideal for efficient energy conversion and improve the overall stability and reliability of the system. These systems rely on efficient MOSFETs to optimize energy conversion efficiency and reduce power loss.
# **8. Power conversion and control systems**
TK12A60D-VB can also be used in other power conversion and control systems, such as speed regulators, power factor correction circuits (PFC), and motor control systems. It helps achieve precise power management by controlling the switching of current, ensuring stable operation of motors and other loads while reducing power loss.
Summary:
TK12A60D-VB is a high-efficiency N-channel MOSFET, using TO220F package, with a maximum drain-source voltage of 650V and a maximum drain current of 20A. It uses Plannar technology to provide stable and reliable power control in high voltage and high current environments. Its low on-resistance and high withstand voltage make it suitable for power management, inverters, electric vehicles, industrial power supplies, switching power supplies and other fields, and is widely used in application scenarios that require high-efficiency current switching and high voltage protection.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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