TK12A53D-VB Product details
Product introduction:
TK12A53D-VB is a high voltage N-channel MOSFET in TO220F package, designed for high voltage applications, with a drain-source voltage (VDS) of 650V. This MOSFET adopts Plannar technology, providing high voltage withstand capability and low on-resistance (RDS(ON)=680mΩ@VGS=10V). Its maximum drain current (ID) is 12A, and it can work stably under high voltage conditions.
TK12A53D-VB is suitable for applications that require high voltage carrying capacity and high efficiency, and can play an important role in high-power switching power supplies, power converters, and electric equipment. Its higher VDS and medium RDS(ON) make it superior in applications that require 650V withstand voltage and medium current requirements, especially in power electronics, inverters, power management systems and other fields.
The gate threshold voltage of this product is 3.5V, which is suitable for most common drive circuits and has good switching performance. Whether in power factor correction circuits (PFC) or power conversion equipment, the TK12A53D-VB can provide stable and efficient performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (gate threshold voltage)**: 3.5V
- **RDS(ON)**: 680mΩ@VGS=10V
- **ID (maximum drain current)**: 12A
- **Technology**: Plannar technology
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Domain and module applications:
1. **High-voltage power management system**
The 650V withstand voltage of the TK12A53D-VB makes it very suitable for use in high-voltage power management systems. For example, in industrial power control systems, it can be used as a switching element in a DC-DC converter to provide a stable power supply to the system and reduce energy loss.
2. **Inverters and power converters**
The high withstand voltage and low RDS(ON) of this MOSFET make it very suitable for use in inverters and power converters, especially for solar inverters and electric vehicle chargers. The TK12A53D-VB is able to provide stable high-voltage switching capabilities, ensuring efficient energy conversion and minimal power loss.
3. **Power factor correction (PFC) circuit**
In power factor correction circuits, the TK12A53D-VB is an ideal choice due to its high withstand voltage and low on-resistance. PFC circuits usually require high voltage and high current MOSFETs to achieve stable power output. TK12A53D-VB can effectively improve the power factor and reduce harmonic pollution.
4. **Power tools and home appliances**
Due to its high voltage resistance, TK12A53D-VB is also used in high-power power tools and home appliances. For example, in high-power applications such as battery chargers for power tools and electric motor drive circuits, TK12A53D-VB can provide efficient switching and stable performance.
5. **Power electronic control systems**
In power electronic control systems, such as motor drive systems, air conditioning and refrigeration equipment control systems, TK12A53D-VB can also play an important role. With its high voltage resistance and good switching characteristics, it can achieve efficient power regulation and control.
**Summary**
TK12A53D-VB is a high-voltage, high-performance N-channel MOSFET suitable for high-voltage power management, power conversion, inverters, PFC circuits, power tools and other fields. Its 650V drain-source voltage and low on-resistance enable it to perform well in high-voltage applications with medium current requirements, with good efficiency and stability.
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