TK12A50D-VB Product details
Product introduction:
**TK12A50D-VB** is an **N-Channel MOSFET**, using **TO220F package**, with **550V** maximum drain-source voltage (VDS) and **18A** maximum drain current (ID). This model uses **Plannar technology**, providing good switching performance and efficient current control. Its **260mΩ** on-resistance (RDS(ON)) makes it suitable for a variety of high-voltage and high-power applications, and can operate stably with low losses.
**TK12A50D-VB** is suitable for **power management, inverters, motor drives, power switches** and other power electronic systems that require high-voltage switches. With its high voltage capability and stable switching performance, it is particularly suitable for use in **high-power power supplies, industrial control systems** and **automotive electronics**.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Model**: TK12A50D-VB
- **Package type**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 550V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **260mΩ** @ **VGS = 10V**
- **Maximum drain current (ID)**: 18A
- **Technology**: Plannar
- **Maximum power consumption**: External heat dissipation design is usually required to ensure that the operating temperature is controlled within a safe range.
Domain and module applications:
3. **Motor drive system**:
**TK12A50D-VB** is suitable for **motor drive systems**, such as **industrial motor control, automotive motor drive, robot control** and other fields. Due to its **18A** large current carrying capacity and high voltage tolerance, this MOSFET can effectively control the start, stop, speed regulation and reversal of the motor, and maintain low switching loss and heat generation, improving the reliability and efficiency of the drive system.
4. **Power switch and power electronics applications**:
**TK12A50D-VB** is also widely used in **power switch applications** that require high voltage and high current. For example, in **power factor correction circuits (PFC), high-voltage switching circuits** and **smart grid systems**, this MOSFET can stably control the current flow and reduce system losses, improving power conversion and transmission efficiency.
5. **Industrial Power Systems**:
The **550V** voltage rating of the **TK12A50D-VB** makes it suitable for **industrial power systems**, including **power distribution, energy control systems** and **high-power power modules**. In these systems, the MOSFET can effectively perform current switching and voltage regulation, reduce power losses, and ensure stable system operation.
6. **Automotive Electronics**:
In **automotive electronic systems**, especially in applications such as **electric vehicle (EV) chargers, battery management systems (BMS)** and **electric vehicle drive systems**, the **TK12A50D-VB** can withstand high voltages and provide stable current switching functions, supporting more efficient battery charging, energy recovery and drive control, and improving the overall efficiency and endurance of electric vehicles.
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