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TK12A10K3-VB Product details

Product introduction:

Product Introduction:

**TK12A10K3-VB** is a high-performance single N-channel MOSFET in a **TO220F** package, designed for medium and high voltage switching applications. Its maximum drain-source voltage (VDS) is 100V, the maximum drain current (ID) is 18A, and it has a low on-resistance (RDS(ON)) of 86mΩ @VGS=10V. This MOSFET uses **Trench** technology and has high-efficiency electrical characteristics. It is suitable for applications such as power management, switching power supplies, low to medium power inverters, and high voltage current regulation. With its low on-resistance and high switching performance, the TK12A10K3-VB can be widely used in industrial, automotive and consumer electronics fields, especially for occasions requiring high power efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 100V 1.8V 18A 86mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description:

- **Model**: TK12A10K3-VB
- **Package**: TO220F
- **Configuration**: Single N channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 86mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: **Trench** technology
- **Maximum power dissipation**: 150W (under proper heat dissipation conditions)
- **Operating temperature range**: -55°C to +150°C
- **Package characteristics**: TO220F Package, good thermal management performance, suitable for high power applications.

Domain and module applications:

Applications and module examples:

1. **Switching Power Supply (SMPS)**:
**TK12A10K3-VB** is suitable for various switching power supply (SMPS) modules, especially DC to DC (DC) converters and AC to DC (AC/DC) power converters. In the power conversion process, MOSFET acts as a switching element to ensure low energy loss and high efficiency. The low on-resistance (RDS(ON)) of this MOSFET can effectively reduce switching losses and is suitable for medium-power power conversion equipment.

2. **Battery Management System (BMS)**:
In the battery management system, **TK12A10K3-VB** can be used for battery charging and discharging control, high current switching and other functions, especially for electric vehicles, drones and other high-power battery-driven devices. Due to its low on-resistance and high switching performance, this MOSFET can efficiently regulate current in the battery system, extend the battery life and ensure system stability.

3. Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV):
This MOSFET can be used in electric vehicle and hybrid electric vehicle motor drives, power control and battery management systems (BMS). In these applications, MOSFETs need to respond quickly to high currents and ensure high efficiency and low losses. The 18A rated current and 100V maximum drain-source voltage of the TK12A10K3-VB enable stable operation in high-power loads of electric vehicles, especially in motor drive and charging management modules.

4. Inverters:
This MOSFET is suitable for solar inverters, wind power inverters and other high-efficiency inverter systems. The low on-resistance, high switching frequency and stability of the TK12A10K3-VB make it suitable for use in energy conversion equipment, providing stable AC output and ensuring that the inverter can still operate efficiently under high loads.

5. **Automotive power control systems**:
In automotive power control systems, especially in electric assisted driving systems (such as electric power steering, automatic parking, etc.), **TK12A10K3-VB** can be used for power conversion and regulation. These systems require MOSFETs to provide fast and stable power conversion to ensure efficiency and reliability under complex dynamic conditions.

6. **Industrial automation**:
In industrial automation systems, **TK12A10K3-VB** can be used to drive motor control, power tools, and other high-power devices. Due to its good switching characteristics and low on-resistance, MOSFETs perform well in high-efficiency power conversion and switching control systems, ensuring stable operation and long-term durability of equipment.

7. **Uninterruptible power supply system (UPS)**:
In uninterruptible power supply (UPS) systems, **TK12A10K3-VB** can be used as a high-efficiency switching element for power conversion and regulation. In the event of a power failure, MOSFET provides fast power conversion, ensuring the reliability and efficiency of the UPS system. Due to its good thermal stability, this MOSFET is suitable for use under high current loads of uninterruptible power supplies.

8. **High-efficiency lighting and power conditioning systems**:
**TK12A10K3-VB** can also be used in power conditioning and control systems for high-efficiency lighting equipment, such as LED drive circuits. In these systems, MOSFET acts as a switching element to regulate the output current and improve the energy efficiency of the system, and is particularly suitable for lighting applications that require high power efficiency and long life.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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