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TK10S04K3L-VB Product details
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TK10S04K3L-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage high current applications, with a drain-source voltage (VDS) of 40V. The MOSFET adopts Trench technology to provide very low on-resistance (RDS(ON)), which is 14mΩ (VGS=4.5V) and 12mΩ (VGS=10V). Its maximum drain current (ID) is 55A, which supports a large current carrying capacity, making it widely used in power management, switching power supplies, and high-efficiency power conversion systems.
The product has a low gate threshold voltage (Vth is 2.5V), which is suitable for starting under low VGS drive. TK10S04K3L-VB provides excellent switching performance and is particularly suitable for applications requiring low power consumption and high current, such as DC-DC converters, power tools, LED driver power supplies, and battery management systems. The use of Trench technology ensures that it has the characteristics of low conduction loss and high efficiency, which can improve the overall energy efficiency of the power system.
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TK10S04K3L-VB is a high-performance N-channel MOSFET in TO252 package, designed for medium and low voltage high current applications, with a drain-source voltage (VDS) of 40V. The MOSFET adopts Trench technology to provide very low on-resistance (RDS(ON)), which is 14mΩ (VGS=4.5V) and 12mΩ (VGS=10V). Its maximum drain current (ID) is 55A, which supports a large current carrying capacity, making it widely used in power management, switching power supplies, and high-efficiency power conversion systems.
The product has a low gate threshold voltage (Vth is 2.5V), which is suitable for starting under low VGS drive. TK10S04K3L-VB provides excellent switching performance and is particularly suitable for applications requiring low power consumption and high current, such as DC-DC converters, power tools, LED driver power supplies, and battery management systems. The use of Trench technology ensures that it has the characteristics of low conduction loss and high efficiency, which can improve the overall energy efficiency of the power system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 2.5V | 55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 2.5V
- **RDS(ON)**: 14mΩ@VGS=4.5V, 12mΩ@VGS=10V
- **ID (maximum drain current)**: 55A
- **Technology**: Trench technology
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- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 40V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 2.5V
- **RDS(ON)**: 14mΩ@VGS=4.5V, 12mΩ@VGS=10V
- **ID (maximum drain current)**: 55A
- **Technology**: Trench technology
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Domain and module applications：
Example**
The low on-resistance and high current carrying capacity of the TK10S04K3L-VB make it an important application in many fields, especially for systems that require high-efficiency power conversion. Due to its maximum drain-source voltage of 40V, it is very suitable for medium and low voltage DC-DC converters, LED driver power supplies and battery management systems (BMS). In DC-DC converters, the TK10S04K3L-VB can effectively reduce energy loss and improve conversion efficiency, especially under low voltage and high current loads.
In addition, the TK10S04K3L-VB is also suitable for use in power tools and power equipment control. For example, in power tools, electric bicycles and electric vehicle charging systems, it can provide efficient current switching and ensure long-term stable operation. The low RDS(ON) characteristics of this MOSFET enable it to have lower heat and power loss in these high-current applications, ensuring system efficiency and performance.
In industrial automation systems, TK10S04K3L-VB can also provide stable power management solutions, such as in robot control systems, servo motor drives, and other application scenarios that require high current switching. In addition, due to its excellent switching performance, this MOSFET also has great advantages in high-speed switching power supplies (SMPS), which can help improve the response speed and energy efficiency of the overall system.
In general, TK10S04K3L-VB is a high-performance MOSFET suitable for low-voltage, high-current power management and power conversion applications. Its low on-resistance and high current carrying capacity enable it to perform well in DC-DC conversion, LED drive, battery management, power tools, and industrial automation control.
The low on-resistance and high current carrying capacity of the TK10S04K3L-VB make it an important application in many fields, especially for systems that require high-efficiency power conversion. Due to its maximum drain-source voltage of 40V, it is very suitable for medium and low voltage DC-DC converters, LED driver power supplies and battery management systems (BMS). In DC-DC converters, the TK10S04K3L-VB can effectively reduce energy loss and improve conversion efficiency, especially under low voltage and high current loads.
In addition, the TK10S04K3L-VB is also suitable for use in power tools and power equipment control. For example, in power tools, electric bicycles and electric vehicle charging systems, it can provide efficient current switching and ensure long-term stable operation. The low RDS(ON) characteristics of this MOSFET enable it to have lower heat and power loss in these high-current applications, ensuring system efficiency and performance.
In industrial automation systems, TK10S04K3L-VB can also provide stable power management solutions, such as in robot control systems, servo motor drives, and other application scenarios that require high current switching. In addition, due to its excellent switching performance, this MOSFET also has great advantages in high-speed switching power supplies (SMPS), which can help improve the response speed and energy efficiency of the overall system.
In general, TK10S04K3L-VB is a high-performance MOSFET suitable for low-voltage, high-current power management and power conversion applications. Its low on-resistance and high current carrying capacity enable it to perform well in DC-DC conversion, LED drive, battery management, power tools, and industrial automation control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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